Ultra-shallow Junction Formed by Plasma Doping and Laser Annealing

2006 ◽  
Author(s):  
Sungho Heo ◽  
Hyunsang Hwang
Keyword(s):  
Laser Annealing ◽  
Shallow Junction ◽  
Plasma Doping

Sub-15 nm n[sup +]∕p-Germanium Shallow Junction Formed by PH[sub 3] Plasma Doping and Excimer Laser Annealing

2006 ◽  
Vol 9 (4) ◽  
pp. G136 ◽  
Author(s):  
Sungho Heo ◽  
Sungkweon Baek ◽  
Dongkyu Lee ◽  
Musarrat Hasan ◽  
Hyungsuk Jung ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Shallow Junction ◽  
Plasma Doping

Ultra Shallow Junction Formation Using Plasma Doping and Laser Annealing for Sub-65 nm Technology Nodes

2006 ◽  
Vol 45 (4B) ◽  
pp. 2961-2964 ◽  
Author(s):  
Guk-Hyon Yon ◽  
Gyoung Ho Buh ◽  
Tai-su Park ◽  
Soo-Jin Hong ◽  
Yu Gyun Shin ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Shallow Junction ◽  
Plasma Doping ◽  
Junction Formation ◽  
Technology Nodes

Ultra Shallow Junction Formation Using Plasma Doping and Laser Annealing for Sub-65 nm Technology Nodes

2005 ◽  
Author(s):  
Guk-Hyon Yon ◽  
Soo-Jin Hong ◽  
Gyoung Ho Buh ◽  
Tai-su Park ◽  
Yu Gyun Shin ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Shallow Junction ◽  
Plasma Doping ◽  
Junction Formation ◽  
Technology Nodes

Ultra-Shallow Junction Formation by Plasma doping and Excimer Laser Annealing

2019 ◽  
Vol 19 (1) ◽  
pp. 87-94 ◽  
Author(s):  
Lak-Myung Jung ◽  
Seung-Woo Do ◽  
Jae-Min Kim ◽  
Seong Ho Kong ◽  
Ki-Hong Nam ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Shallow Junction ◽  
Plasma Doping ◽  
Junction Formation

Effects of low-temperature postannealing on a n+-p shallow junction fabricated by plasma doping

2005 ◽  
Vol 86 (19) ◽  
pp. 193503 ◽  
Author(s):  
Sungkweon Baek ◽  
Hyunsang Hwang ◽  
Kiju Im ◽  
Chang-Geun Ahn ◽  
Jong-Heon Yang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Shallow Junction ◽  
Plasma Doping

Hydrogen Etching Effects During Plasma Doping Processes and Impact on Shallow Junction Formation

1995 ◽  
Vol 396 ◽  
Author(s):  
Shu Qin ◽  
James D. Bernstein ◽  
Chung Chan
Keyword(s):  
Integrated Circuits ◽  
Large Scale ◽  
Impurity Profile ◽  
Device Structure ◽  
Hydrogen Etching ◽  
Shallow Junction ◽  
Dopant Profile ◽  
Plasma Doping ◽  
Junction Formation ◽  
Hydrogen Radicals

AbstractHydrogen etching effects in plasma ion implantation (PII) doping processes alter device structure and implant dopant profile and reduce the retained implant dose. This has particular relevance to the shallow junction devices of ultra large scale integrated circuits (ULSI). Hydrogen etching of semiconductor materials including Si, poly-Si, SiO2, Al, and photoresist films have been investigated. The effects of varying different PII process parameters are presented. The experimental data show that the spontaneous etching by hydrogen radicals enhanced by ion bombardment is responsible for the etching phenomena. A computer simulation is used to predict the as-implanted impurity profile and the retained implant dose for a shallow junction doping when the etching effect is considered.

Ultra-Shallow Junction Formation by a Non-Melting Process; Double-Pulsed Green Laser Annealing

2005 ◽  
Vol 862 ◽  
Author(s):  
Toshio Kudo ◽  
Susumu Sakuragi ◽  
Kazunori Yamazaki
Keyword(s):  
Penetration Depth ◽  
Laser Annealing ◽  
Melting Process ◽  
Green Laser ◽  
Deep Penetration ◽  
Shallow Junction ◽  
Junction Formation ◽  
Ultra Shallow Junctions ◽  
Short Annealing ◽  
Overlap Ratio

AbstractIn order to investigate the possibility of nanosecond activation in the non-melting state, we adopted the method of double-pulsed green laser annealing (DPSS), controlling effectively the combined pulse width with two pulsed lasers (pulse duration: ˜100ns, frequency: 1kHz). We investigated the formation of ultra-shallow junctions (USJ) less than 10nm in spite of the deep penetration depth of the green wavelength in crystalline Si (˜1000nm). In order to limit the depth of B implant, a Ge pre-amorphization implant was performed at an energy of 3keV to a dose of 3E+14/cm2. After the pre-amorphization implant, a B implant was performed at 0.2kev and doses of 5E+14/cm2 and 1E+15/cm2. The implanted B dopants remain within the pre-amorphized Si layer. The double-pulsed laser irradiation was performed with a homogenized line beam of 0.1mm x 17mm, scanning a sample stage at a constant velocity of 10mm/s, that is, at an overlap ratio of 90%. The non-melting state was found to be in the pulse energy density range of E ≤ 780mJ/cm2 at a delay time of 300ns. Overcoming the issues of the short annealing time (˜<1μs) and the deep penetration depth (˜1000nm), we succeeded in the ultra-shallow junction formation beyond the 45nm CMOS node: maximum junction depth of 6nm, minimum sheet resistance of 0.65kohm/sq at a B dose of 1E+15/cm2, an abruptness of 1.4nm/dec.

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