Sub-15 nm n[sup +]∕p-Germanium Shallow Junction Formed by PH[sub 3] Plasma Doping and Excimer Laser Annealing

2006 ◽  
Vol 9 (4) ◽  
pp. G136 ◽  
Author(s):  
Sungho Heo ◽  
Sungkweon Baek ◽  
Dongkyu Lee ◽  
Musarrat Hasan ◽  
Hyungsuk Jung ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Shallow Junction ◽  
Plasma Doping

Ultra-Shallow Junction Formation by Plasma doping and Excimer Laser Annealing

2019 ◽  
Vol 19 (1) ◽  
pp. 87-94 ◽  
Author(s):  
Lak-Myung Jung ◽  
Seung-Woo Do ◽  
Jae-Min Kim ◽  
Seong Ho Kong ◽  
Ki-Hong Nam ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Shallow Junction ◽  
Plasma Doping ◽  
Junction Formation

Shallow junction formation on p-like CdTe crystals by indium diffusion using excimer laser annealing

2001 ◽  
Vol 30 (8) ◽  
pp. 911-916 ◽  
Author(s):  
M. Niraula ◽  
A. Nakamura ◽  
T. Aoki ◽  
H. Tatsuoka ◽  
Y. Hatanaka
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Shallow Junction ◽  
Junction Formation ◽  
Indium Diffusion

Excimer Laser annealing for shallow junction formation in Si power MOS devices

2006 ◽  
Vol 504 (1-2) ◽  
pp. 2-6 ◽  
Author(s):  
G. Fortunato ◽  
V. Privitera ◽  
A. La Magna ◽  
L. Mariucci ◽  
M. Cuscunà ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Shallow Junction ◽  
Mos Devices ◽  
Junction Formation

The Influence of Low Temperature Pre-Annealing on the Defect Removal and the Reduction of Junction Depth in Excimer Laser Annealing

2002 ◽  
Vol 717 ◽  
Author(s):  
Sungkweon Baek ◽  
Taesung Jang ◽  
Hyunsang Hwang
Keyword(s):  
Low Temperature ◽  
Leakage Current ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Defect Density ◽  
Process Conditions ◽  
Junction Depth ◽  
Excimer Laser Annealing ◽  
Transmission Electron Microscopy Analysis ◽  
Shallow Junction

AbstractThe influence of low temperature pre-annealing on p+/n ultra-shallow junction was investigated. An ultra-shallow junction was formed by means of B2H6 plasma doping at an energy of 500V. The activation was performed by excimer laser annealing. To study the low temperature annealing prior to laser annealing, furnace annealing at 300°C∼500°C for 5min was performed. Compared with control samples with no pre-annealing, the low temperature preannealing significantly improves junction characteristics, resulting in a reduction of junction depth and a lower leakage current density. A cross-sectional transmission electron microscopy analysis confirmed the lower defect density, which explains the lower leakage current. By optimizing the process conditions, excellent electrical characteristics of the p+/n ultra-shallow junction such as a junction depth of 28nm and a sheet resistance of 250Δ/sq. can be obtained.

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