Active dopant profiling of ultra shallow junction annealed with combination of spike lamp and laser annealing processes using scanning spreading resistance microscopy

2012 ◽  
Author(s):  
Satoshi Abo ◽  
Naoya Ushigome ◽  
Hidenori Osae ◽  
Fujio Wakaya ◽  
Toshiaki Iwamatsu ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Spreading Resistance ◽  
Shallow Junction ◽  
Dopant Profiling

Local Resistance Profiling of Ultra-Shallow Junction with Spike Lamp and Laser Annealing Using Scanning Spreading Resistance Microscopy

2008 ◽  
Author(s):  
Satoshi Abo ◽  
Yuji Tanaka ◽  
Kazuhisa Nishikawa ◽  
Fujio Wakaya ◽  
Toshiaki Iwamatsu ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Local Resistance ◽  
Spreading Resistance ◽  
Shallow Junction

Ultra-Shallow Junction Formation by a Non-Melting Process; Double-Pulsed Green Laser Annealing

2005 ◽  
Vol 862 ◽  
Author(s):  
Toshio Kudo ◽  
Susumu Sakuragi ◽  
Kazunori Yamazaki
Keyword(s):  
Penetration Depth ◽  
Laser Annealing ◽  
Melting Process ◽  
Green Laser ◽  
Deep Penetration ◽  
Shallow Junction ◽  
Junction Formation ◽  
Ultra Shallow Junctions ◽  
Short Annealing ◽  
Overlap Ratio

AbstractIn order to investigate the possibility of nanosecond activation in the non-melting state, we adopted the method of double-pulsed green laser annealing (DPSS), controlling effectively the combined pulse width with two pulsed lasers (pulse duration: ˜100ns, frequency: 1kHz). We investigated the formation of ultra-shallow junctions (USJ) less than 10nm in spite of the deep penetration depth of the green wavelength in crystalline Si (˜1000nm). In order to limit the depth of B implant, a Ge pre-amorphization implant was performed at an energy of 3keV to a dose of 3E+14/cm2. After the pre-amorphization implant, a B implant was performed at 0.2kev and doses of 5E+14/cm2 and 1E+15/cm2. The implanted B dopants remain within the pre-amorphized Si layer. The double-pulsed laser irradiation was performed with a homogenized line beam of 0.1mm x 17mm, scanning a sample stage at a constant velocity of 10mm/s, that is, at an overlap ratio of 90%. The non-melting state was found to be in the pulse energy density range of E ≤ 780mJ/cm2 at a delay time of 300ns. Overcoming the issues of the short annealing time (˜<1μs) and the deep penetration depth (˜1000nm), we succeeded in the ultra-shallow junction formation beyond the 45nm CMOS node: maximum junction depth of 6nm, minimum sheet resistance of 0.65kohm/sq at a B dose of 1E+15/cm2, an abruptness of 1.4nm/dec.

Characteristics of Boron and Arsenic Ultra-Shallow Junction Using Laser Annealing with Pre-Amorphization Implantation

2000 ◽  
Author(s):  
C. M. Park ◽  
K. Min ◽  
S. D. Kim ◽  
S. A. Prussin ◽  
M. K. Han ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Shallow Junction
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