Superior Spike Annealing Performance in 65nm Source/Drain Extension Engineering

2006 ◽  
Author(s):  
C.I. Li ◽  
Chin Cheng Chien ◽  
K.T. Huang ◽  
Po Yuan Chen ◽  
Hsiang Ying Wang ◽  
...  
Keyword(s):  
Spike Annealing

Spike annealing of boron-implanted polycrystalline-silicon on thin SiO2

2001 ◽  
Vol 78 (8) ◽  
pp. 1071-1073 ◽  
Author(s):  
A. T. Fiory ◽  
K. K. Bourdelle ◽  
P. K. Roy
Keyword(s):  
Polycrystalline Silicon ◽  
Spike Annealing

Mechanical Enhancement of Low-k Organosilicates by Laser Spike Annealing

2008 ◽  
Vol 155 (10) ◽  
pp. G224 ◽  
Author(s):  
Willi Volksen ◽  
Geraud Dubois ◽  
Andrew Kellock ◽  
Teddie P. Magbitang ◽  
Robert D. Miller ◽  
...  
Keyword(s):  
Spike Annealing ◽  
Low K

Molecular Simulations of Laser Spike Annealing of Block Copolymer Lamellar Thin-Films

Langmuir ◽  
2020 ◽  
Vol 36 (21) ◽  
pp. 5754-5764
Author(s):  
Chih-Yin Chen ◽  
Fernando A. Escobedo
Keyword(s):  
Thin Films ◽  
Block Copolymer ◽  
Molecular Simulations ◽  
Spike Annealing

Thermally-Stable High Effective Work Function TaCN and Ta2N Films for pMOS Metal Gate Applications

2008 ◽  
Vol 1073 ◽  
Author(s):  
Christoph Adelmann ◽  
P. Lehnen ◽  
L.-Å. Ragnarsson ◽  
T. Conard ◽  
A. Franquet ◽  
...  
Keyword(s):  
Work Function ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Metal Films ◽  
Organic Chemical ◽  
Thermal Budget ◽  
Effective Work ◽  
Effective Work Function ◽  
Metal Organic ◽  
Spike Annealing

ABSTRACTTaCN-based metal films were grown by metal-organic chemical-vapor deposition (MOCVD) and atomic vapor-deposition (AVD). Thermal decomposition at 500ºC leads to com-positions of approximately Ta0.50C0.4N0.1 (“TaCN”), whereas a reactive process using NH3 leads to the formation of Ta0.65C0.1N0.25 (“Ta2N”) films. All films are nearly amorphous as grown and recrystallize only weakly after spike annealing at 1050°C. The thermal stability of TaCN/HfSiO4 and Ta2N/HfSiO4 stacks during spike annealing at 1050°C was studied and Si and Hf outdiffusion into TaCN or Ta2N was observed. The effective work functions of TaCN and Ta2N on HfSiO4 were found to be as high as 4.9 eV after high thermal budget. It is demonstrated that the effective work function can be further increased to 5.1 eV after high thermal budget by the insertion of a thin Al2O3 capping layer between HfSiO4 and the metal films.

Flat-band Voltage Study Of Atomic-layer-Deposited Aluminum-oxide Subjected To Spike Thermal Annealing

2003 ◽  
Vol 765 ◽  
Author(s):  
V. R. Mehta ◽  
A. T. Fiory ◽  
N. M. Ravindra ◽  
M. Y. Ho ◽  
G. D. Wilk ◽  
...  
Keyword(s):  
Atomic Layer ◽  
Oxide Thickness ◽  
Atomic Diffusion ◽  
Flat Band ◽  
Gate Electrodes ◽  
Layer Deposition ◽  
Thermal Oxide ◽  
P Type ◽  
Low Thermal Budget ◽  
Spike Annealing

AbstractHigh-κ dielectrics based the oxide of Al were prepared by atomic layer deposition (ALD) on 200-mm p-type Si wafers. Films were deposited directly on clean Si or on 0.5-nm underlayers of rapid thermal oxide or oxynitrides grown in O2 and/or NO ambients. The purpose of the underlayer films is to provide a barrier for atomic diffusion from the crystal Si to the high-κ dielectric film. Deposited Al-oxide films varied in thickness from 2 to 6 nm. Post deposition anneals were used to stabilize the ALD oxides. Equivalent SiO2-oxide thickness varied from 1.0 to 3.5 nm. In situ P-doped amorphous-Si 160 nm films were deposited over the oxides to prepare heavily doped n-type gate electrodes in MOS structures. Samples were rapid thermal annealed in N2 ambient at 800°C for 30 s, or spike annealed at 950, 1000, and 1050°C (nominally zero time at peak temperature). Flat band voltages, VFB were determined from C-V measurements on dot patterns. The 800°C anneals were used as a baseline, at which the poly-Si electrodes are crystallized and acquire electrical activation while subjecting the high-κ dielectrics to a low thermal budget. Positive shifts in VFB were observed, relative to a pure SiO2 control, ranging from 0.2 to 0.8 V. Spike annealing reduces the VFB shift for ALD films deposited over underlayer films. The VFB shift and the changes with annealing temperature show systematic dependence on the nitridation of the underlayer.

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