Sequentially stacked 3DIC technology using green nanosecond laser crystallization and laser spike annealing technologies

2015 ◽  
Author(s):  
Chih-Chao Yang ◽  
Tung-Ying Hsieh ◽  
Wen-Hsien Huang ◽  
Hsing-Hsiang Wang ◽  
Chang-Hong Shen ◽  
...  
Keyword(s):  
Nanosecond Laser ◽  
Laser Crystallization ◽  
Spike Annealing

Fast programming metal-gate Si quantum dot nonvolatile memory using green nanosecond laser spike annealing

2012 ◽  
Vol 100 (14) ◽  
pp. 143501 ◽  
Author(s):  
Yu-Chung Lien ◽  
Jia-Min Shieh ◽  
Wen-Hsien Huang ◽  
Cheng-Hui Tu ◽  
Chieh Wang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Nonvolatile Memory ◽  
Nanosecond Laser ◽  
Metal Gate ◽  
Si Quantum Dot ◽  
Spike Annealing

Nanosecond laser-induced breakdown assisted by femtosecond laser pre-ionization in air: the effect on spatial resolution and continuous radiation

2020 ◽  
Vol 92 (2) ◽  
pp. 20701
Author(s):  
Bo Li ◽  
Xiaofeng Li ◽  
Zhifeng Zhu ◽  
Qiang Gao
Keyword(s):  
Femtosecond Laser ◽  
Spatial Resolution ◽  
Laser Induced Breakdown Spectroscopy ◽  
Nanosecond Laser ◽  
Breakdown Threshold ◽  
Powerful Technique ◽  
Breakdown Spectroscopy ◽  
Continuous Radiation ◽  
Laser Induced Breakdown

Laser-induced breakdown spectroscopy (LIBS) is a powerful technique for quantitative diagnostics of gases. The spatial resolution of LIBS, however, is limited by the volume of plasma. Here femtosecond-nanosecond dual-pulsed LIBS was demonstrated. Using this method, the breakdown threshold was reduced by 80%, and decay of continuous radiation was shortened. In addition, the volume of the plasma was shrunk by 85% and hence, the spatial resolution of LIBS was significantly improved.

Laser Crystallization and Dopant Activation of a-Si:H Carrier-Selective Layer in TOPCon Si Solar Cells

2020 ◽  
Vol 10 (5) ◽  
pp. 1283-1289
Author(s):  
George C. Wilkes ◽  
Ajay D. Upadhyaya ◽  
Ajeet Rohatgi ◽  
Mool C. Gupta
Keyword(s):  
Solar Cells ◽  
Laser Crystallization ◽  
Selective Layer ◽  
Dopant Activation ◽  
Si Solar Cells
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