KRF excimer laser annealing for ultra shallow junction formation: approach for irradiation energy density reduction

2004 ◽  
Author(s):  
K. Shibahara ◽  
K. Kurobe ◽  
Y. Ishikawa ◽  
K. Kagawa ◽  
Y. Niwatsukino ◽  
...  
Keyword(s):  
Energy Density ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Shallow Junction ◽  
Density Reduction ◽  
Irradiation Energy ◽  
Junction Formation ◽  
Krf Excimer Laser ◽  
Irradiation Energy Density

Shallow junction formation on p-like CdTe crystals by indium diffusion using excimer laser annealing

2001 ◽  
Vol 30 (8) ◽  
pp. 911-916 ◽  
Author(s):  
M. Niraula ◽  
A. Nakamura ◽  
T. Aoki ◽  
H. Tatsuoka ◽  
Y. Hatanaka
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Shallow Junction ◽  
Junction Formation ◽  
Indium Diffusion

Excimer Laser annealing for shallow junction formation in Si power MOS devices

2006 ◽  
Vol 504 (1-2) ◽  
pp. 2-6 ◽  
Author(s):  
G. Fortunato ◽  
V. Privitera ◽  
A. La Magna ◽  
L. Mariucci ◽  
M. Cuscunà ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Shallow Junction ◽  
Mos Devices ◽  
Junction Formation

Ultra-Shallow Junction Formation by Plasma doping and Excimer Laser Annealing

2019 ◽  
Vol 19 (1) ◽  
pp. 87-94 ◽  
Author(s):  
Lak-Myung Jung ◽  
Seung-Woo Do ◽  
Jae-Min Kim ◽  
Seong Ho Kong ◽  
Ki-Hong Nam ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Shallow Junction ◽  
Plasma Doping ◽  
Junction Formation

scholarly journals Crystal Growth of Low-Temperature Processed Poly-Si by Excimer Laser Annealing. Dependences of Poly-Si Grain on Energy Density and Shot Number.

Shinku ◽  
2000 ◽  
Vol 43 (12) ◽  
pp. 1120-1125 ◽  
Author(s):  
Naoto MATSUO ◽  
Hisashi ABE ◽  
Naoya KAWAMOTO ◽  
Ryouhei TAGUCHI ◽  
Tomoyuki NOUDA ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Energy Density ◽  
Low Temperature ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Shot Number

Long-pulse duration excimer laser annealing of Al+ ion implanted 4H-SiC for pn junction formation

2003 ◽  
Vol 208-209 ◽  
pp. 292-297 ◽  
Author(s):  
C. Dutto ◽  
E. Fogarassy ◽  
D. Mathiot ◽  
D. Muller ◽  
P. Kern ◽  
...  
Keyword(s):  
Pulse Duration ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Pn Junction ◽  
Junction Formation ◽  
Long Pulse ◽  
Ion Implanted

Study on dopant activation of phosphorous implanted polycrystalline silicon thin films by KrF excimer laser annealing

2002 ◽  
Vol 46 (8) ◽  
pp. 1085-1090 ◽  
Author(s):  
Chang-Ho Tseng ◽  
Ching-Wei Lin ◽  
Teh-Hung Teng ◽  
Ting-Kuo Chang ◽  
Huang-Chung Cheng ◽  
...  
Keyword(s):  
Thin Films ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Dopant Activation ◽  
Silicon Thin Films ◽  
Krf Excimer Laser
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