Extended Abstracts of the Third International Workshop on Junction Technology, 2002. IWJT.
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S/D extension formation utilizing offset spacer for 65 nm node high performance CMOS

Extended Abstracts of the Third International Workshop on Junction Technology, 2002. IWJT. ◽

10.1109/iwjt.2002.1225215 ◽

2002 ◽

Cited By ~ 1

Author(s):

K. Adachi ◽

K. Ohuchi ◽

Y. Toyoshima

Keyword(s):

High Performance

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SOI technology for future SoC

Extended Abstracts of the Third International Workshop on Junction Technology, 2002. IWJT. ◽

10.1109/iwjt.2002.1225217 ◽

2002 ◽

Author(s):

Y. Inoue

Keyword(s):

Soi Technology

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TCAD simulation in development and fabrication of deep-sub-/spl mu/m devices

Extended Abstracts of the Third International Workshop on Junction Technology, 2002. IWJT. ◽

10.1109/iwjt.2002.1225210 ◽

2002 ◽

Author(s):

A. Erlebach ◽

C. Zechner ◽

A. Al-Bayati

Keyword(s):

Tcad Simulation

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Evaluation of BN-delta-doped multilayer reference materials for shallow depth profiling in SIMS

Extended Abstracts of the Third International Workshop on Junction Technology, 2002. IWJT. ◽

10.1109/iwjt.2002.1225199 ◽

2002 ◽

Author(s):

S. Yoshikawa ◽

F. Toujou ◽

Y. Homma ◽

H. Takenaka ◽

S. Hayashi ◽

...

Keyword(s):

Reference Materials ◽

Depth Profiling ◽

Shallow Depth

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Gas phase doping at room temperature

Extended Abstracts of the Third International Workshop on Junction Technology, 2002. IWJT. ◽

10.1109/iwjt.2002.1225196 ◽

2002 ◽

Author(s):

Y. Sasaki ◽

B. Mizuno ◽

S. Akama ◽

R. Higaki ◽

K. Tsutsui ◽

...

Keyword(s):

Gas Phase ◽

Room Temperature

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Flash lamp annealing technology for ultra-shallow junction formation

Extended Abstracts of the Third International Workshop on Junction Technology, 2002. IWJT. ◽

10.1109/iwjt.2002.1225191 ◽

2002 ◽

Cited By ~ 11

Author(s):

T. Ito ◽

K. Suguro ◽

M. Tamura ◽

T. Taniguchi ◽

Y. Ushiku ◽

...

Keyword(s):

Flash Lamp ◽

Shallow Junction ◽

Junction Formation

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Photoluminescence and ab initio study of {311} defect nucleation in Si

Extended Abstracts of the Third International Workshop on Junction Technology, 2002. IWJT. ◽

10.1109/iwjt.2002.1225200 ◽

2002 ◽

Author(s):

H. Tsuji ◽

R. Kim ◽

T. Hirose ◽

M. Furuhashi ◽

M. Tachi ◽

...

Keyword(s):

Ab Initio ◽

Ab Initio Study ◽

Defect Nucleation

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Low temperature activation of ion implanted dopants: a review

Extended Abstracts of the Third International Workshop on Junction Technology, 2002. IWJT. ◽

10.1109/iwjt.2002.1225211 ◽

2002 ◽

Cited By ~ 1

Author(s):

J.O. Borland

Keyword(s):

Low Temperature ◽

Temperature Activation ◽

Ion Implanted

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Source/drain elevation process using implantation enhanced selective etching

Extended Abstracts of the Third International Workshop on Junction Technology, 2002. IWJT. ◽

10.1109/iwjt.2002.1225201 ◽

2002 ◽

Author(s):

M.Q. Huda ◽

K. Sakamoto ◽

H. Tanoue

Keyword(s):

Selective Etching

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Silicide technology for USJ in next technology node

Extended Abstracts of the Third International Workshop on Junction Technology, 2002. IWJT. ◽

10.1109/iwjt.2002.1225206 ◽

2002 ◽

Cited By ~ 5

Author(s):

K. Suguro ◽

T. Iinuma ◽

M. Izuha ◽

K. Ohuchi ◽

A. Hokazono ◽

...

Keyword(s):

Technology Node

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Extended Abstracts of the Third International Workshop on Junction Technology, 2002. IWJT.Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

S/D extension formation utilizing offset spacer for 65 nm node high performance CMOS

SOI technology for future SoC

TCAD simulation in development and fabrication of deep-sub-/spl mu/m devices

Evaluation of BN-delta-doped multilayer reference materials for shallow depth profiling in SIMS

Gas phase doping at room temperature

Flash lamp annealing technology for ultra-shallow junction formation

Photoluminescence and ab initio study of {311} defect nucleation in Si

Low temperature activation of ion implanted dopants: a review

Source/drain elevation process using implantation enhanced selective etching

Silicide technology for USJ in next technology node

Extended Abstracts of the Third International Workshop on Junction Technology, 2002. IWJT.
Latest Publications