High Microwave and Noise Performance of 0.17-<tex>$muhbox m$</tex>AlGaN–GaN HEMTs on High-Resistivity Silicon Substrates

2004 ◽  
Vol 25 (4) ◽  
pp. 167-169 ◽  
Author(s):  
A. Minko ◽  
V. Hoel ◽  
S. Lepilliet ◽  
G. Dambrine ◽  
J.C. DeJaeger ◽  
...  
Keyword(s):  
High Resistivity ◽  
Silicon Substrates ◽  
Noise Performance ◽  
Gan Hemts ◽  
High Resistivity Silicon

Heterostructures of GaAs and AlAs on Silicon: X-Ray Analysis and Excimer Laser Annealing

1988 ◽  
Vol 116 ◽  
Author(s):  
A. Georgakilas ◽  
M. Fatemi ◽  
L. Fotiadis ◽  
A. Christou
Keyword(s):  
Molecular Beam Epitaxy ◽  
Dislocation Density ◽  
Excimer Laser ◽  
Molecular Beam ◽  
Laser Annealing ◽  
High Resistivity ◽  
Silicon Substrates ◽  
Excimer Laser Annealing ◽  
X Ray ◽  
High Resistivity Silicon

AbstractOne micron thick AlAs/GaAs structures have been deposited by molecular beam epitaxy onto high resistivity silicon substrates. Subsequent to deposition, it is shown that Excimer laser annealing up to 120mJ/cm2 at 248nm improves the GaAs mobility to approximately 2000cm2 /v-s. Dislocation density, however, did not decrease up to 180mJ/cm2 showing that improvement in transport properties may not be accompanied by an associated decrease in dislocation density at the GaAs/Si interface.

scholarly journals RF MEMS ohmic switches for matrix configurations

2012 ◽  
Vol 4 (4) ◽  
pp. 421-433 ◽  
Author(s):  
Giorgio De Angelis ◽  
Andrea Lucibello ◽  
Emanuela Proietti ◽  
Romolo Marcelli ◽  
Giancarlo Bartolucci ◽  
...  
Keyword(s):  
Rf Mems ◽  
Coplanar Waveguide ◽  
Building Blocks ◽  
Micro Electro Mechanical System ◽  
High Resistivity ◽  
Silicon Substrates ◽  
Double Pole ◽  
Rf Test ◽  
Clamped Beams ◽  
High Resistivity Silicon

Two different topologies of radio frequency micro-electro-mechanical system (RF MEMS) series ohmic switches (cantilever and clamped–clamped beams) in coplanar waveguide (CPW) configuration have been characterized by means of DC, environmental, and RF measurements. In particular, on-wafer checks have been followed by RF test after vibration, thermal shocks, and temperature cycles. The devices have been manufactured on high resistivity silicon substrates, as building blocks to be implemented in different single-pole 4-throw (SP4 T), double-pole double-throw (DPDT) configurations, and then integrated in Low Temperature Co-fired Ceramics (LTCC) technology for the realization of large-order Clos 3D networks.

Surface-Passivated High-Resistivity Silicon Substrates for RFICs

2004 ◽  
Vol 25 (4) ◽  
pp. 176-178 ◽  
Author(s):  
B. Rong ◽  
J.N. Burghartz ◽  
L.K. Nanver ◽  
B. Rejaei ◽  
M. vanderZwan
Keyword(s):  
High Resistivity ◽  
Silicon Substrates ◽  
High Resistivity Silicon

Short-channel pMOSTs in a high-resistivity silicon substrate. II. Noise performance

1992 ◽  
Vol 39 (10) ◽  
pp. 2278-2283 ◽  
Author(s):  
G. Vanstraelen ◽  
E. Simoen ◽  
C. Claeys ◽  
G.J. Declerck
Keyword(s):  
Silicon Substrate ◽  
High Resistivity ◽  
Noise Performance ◽  
Short Channel ◽  
High Resistivity Silicon

Effective resistivity extraction of low-loss silicon substrates at millimeter-wave frequencies

2020 ◽  
Vol 12 (7) ◽  
pp. 615-628
Author(s):  
Lucas Nyssens ◽  
Martin Rack ◽  
Jean-Pierre Raskin
Keyword(s):  
Millimeter Wave ◽  
Coplanar Waveguide ◽  
Characteristic Impedance ◽  
Wave Radiation ◽  
High Resistivity ◽  
Silicon Substrates ◽  
Dielectric Losses ◽  
Effective Resistivity ◽  
Novel Method ◽  
High Resistivity Silicon

AbstractThe effective resistivity (ρeff) is a figure of merit commonly used to assess the radio-frequency performance of a substrate from the measurements of coplanar waveguide lines. For highly resistive substrates, such as the trap-rich (TR) substrate, the extracted ρeff decreases by several orders of magnitude at millimeter-wave frequencies. The explanation for this decay is twofold. First, the imaginary part of the characteristic impedance ${\rm \lpar \Im }\lpar Z_c\rpar \rpar$ is not well extracted, which leads to an incorrect separation of the total losses among the metal and substrate losses. Second, the original expression of ρeff does not include dielectric losses, which might become non-negligible at millimeter-wave frequencies. This paper solves both issues by presenting a new procedure to extract ρeff and the dielectric losses simultaneously, and by introducing a novel method to correct ${\rm \Im }\lpar {Z_c} \rpar$. Furthermore, it is shown that this extraction method enables the correct extraction of substrate parameters up to 220 GHz of TR and high-resistivity silicon substrates. Finally, the origin of the large extracted value of dielectric loss is discussed in the potential presence of surface roughness and surface wave radiation. Both phenomena are discounted thanks to measurements of an additional reflective structure and a standard impedance substrate.

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