Leakage Current Characteristic of Pre-Damaged Interlayer Dielectric During Voltage Ramp Method

Author(s):  
Sang-Soo Hwang ◽  
Sung-Yup Jung ◽  
Young-Chang Joo
2004 ◽  
Vol 43 (1) ◽  
pp. 86-90 ◽  
Author(s):  
Takuya Fukuda ◽  
Hirotaka Nishino ◽  
Hiroshi Yanazawa

2007 ◽  
Vol 10 (11) ◽  
pp. H334 ◽  
Author(s):  
Sunjung Kim ◽  
Duk-Kyu Bae ◽  
Jeong-Hyeon Choi ◽  
Jun-Ho Jang ◽  
Jeong-Soo Lee

2001 ◽  
Vol 15 (17n19) ◽  
pp. 688-691 ◽  
Author(s):  
M. SÁNCHEZ ◽  
J. C. GONZÁLEZ ◽  
P. DÍAZ ◽  
R. PEÑA-SIERRA ◽  
A. ESCOBOSA

The origin of the kinks in semiconductor lasers light-current characteristic (L(l)) is theoretically alld experimentally analyzed. The devices are straight separate confinement heterostructure lasers. We have developed a model to calculate L(l) which considers two thermal loss mechanisms: the leakage current and Auger recombination. It is shown that the kinks in the light-current characteristic appear at temperatures at which the considered mechanisms crossover.


Author(s):  
Abdul Syakur ◽  
Jumrianto Jumrianto ◽  
Dessy Ariyanti ◽  
Munawar Agus Riyadi ◽  
Devi Devi ◽  
...  

2011 ◽  
Vol 99 (2) ◽  
pp. 022901 ◽  
Author(s):  
Jeong Hwan Han ◽  
Sora Han ◽  
Woongkyu Lee ◽  
Sang Woon Lee ◽  
Seong Keun Kim ◽  
...  

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