Improvement in the leakage current characteristic of metal-insulator-metal capacitor by adopting RuO2 film as bottom electrode

2011 ◽  
Vol 99 (2) ◽  
pp. 022901 ◽  
Author(s):  
Jeong Hwan Han ◽  
Sora Han ◽  
Woongkyu Lee ◽  
Sang Woon Lee ◽  
Seong Keun Kim ◽  
...  
Keyword(s):  
Leakage Current ◽  
Bottom Electrode ◽  
Metal Insulator ◽  
Current Characteristic ◽  
Metal Insulator Metal

Metal-insulator-metal capacitor with high capacitance density and low leakage current using ZrTiO4 film

2009 ◽  
Vol 95 (11) ◽  
pp. 113502 ◽  
Author(s):  
Yung-Hsien Wu ◽  
Bo-Yu Chen ◽  
Lun-Lun Chen ◽  
Jia-Rong Wu ◽  
Min-Lin Wu
Keyword(s):  
Leakage Current ◽  
Metal Insulator ◽  
Capacitance Density ◽  
High Capacitance ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Metal Insulator Metal

The role of carbon contamination in voltage linearity and leakage current in high-k metal-insulator-metal capacitors

2008 ◽  
Vol 104 (5) ◽  
pp. 054510 ◽  
Author(s):  
Bing Miao ◽  
Rajat Mahapatra ◽  
Nick Wright ◽  
Alton Horsfall
Keyword(s):  
Leakage Current ◽  
Metal Insulator ◽  
Carbon Contamination ◽  
High K ◽  
Metal Insulator Metal

Enhanced leakage current behavior of Sr2Ta2O7−x/SrTiO3 bilayer dielectrics for metal–insulator–metal capacitors

2011 ◽  
Vol 519 (17) ◽  
pp. 5734-5739 ◽  
Author(s):  
C. Baristiran Kaynak ◽  
M. Lukosius ◽  
I. Costina ◽  
B.Tillack ◽  
Ch. Wenger ◽  
...  
Keyword(s):  
Leakage Current ◽  
Metal Insulator ◽  
Metal Insulator Metal ◽  
Current Behavior

Resistive Switching Behavior and Electrical Properties of TiO2:Ho2O3 and HoTiOx Based MIM Capacitors

2014 ◽  
Vol 1691 ◽  
Author(s):  
H. García ◽  
H. Castán ◽  
S. Dueñas ◽  
E. Pérez ◽  
L. A. Bailón ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Leakage Current ◽  
Resistive Switching ◽  
Treatment Effects ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Metal Insulator ◽  
Metal Insulator Metal ◽  
Mim Capacitors

ABSTRACTHo2O3-TiO2 based metal-insulator-metal capacitors were grown by ALD, using Ho(thd)3, Ti(OCH(CH3)2)4 and ozone as precursors. The thicknesses of the films were in the range of 7.7 to 25 nm. Some of the films were post-deposited annealed in order to study the treatment effects. The capacitors were electrically characterized. Leakage current decreases as the amount of holmium increased in the films. Resistive switching behavior was obtained in the samples where the leakage current was low. This effect was also observed in Ho2O3 films, where no titanium was present in the films.

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