Analysis of Leakage Current of Low-k Materials for Use as Interlayer Dielectric

2004 ◽  
Vol 43 (1) ◽  
pp. 86-90 ◽  
Author(s):  
Takuya Fukuda ◽  
Hirotaka Nishino ◽  
Hiroshi Yanazawa
Keyword(s):  
Leakage Current ◽  
Interlayer Dielectric ◽  
Low K

Correlation between stress-induced leakage current and dielectric degradation in ultra-porous SiOCH low-k materials

2015 ◽  
Vol 118 (16) ◽  
pp. 164101 ◽  
Author(s):  
Y. Li ◽  
A. Leśniewska ◽  
O. Varela Pedreira ◽  
J.-F. de Marneffe ◽  
I. Ciofi ◽  
...  
Keyword(s):  
Leakage Current ◽  
Stress Induced Leakage Current ◽  
Low K ◽  
Dielectric Degradation

Designing Ultra Low-k Dielectric Materials for Ease of Patterning

2010 ◽  
Vol 1249 ◽  
Author(s):  
George Andrew Antonelli ◽  
Gengwei Jiang ◽  
Mandyam Sriram ◽  
Kaushik Chattopadhyay ◽  
Wei Guo ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Ion Beam ◽  
Plasma Reactor ◽  
Dielectric Materials ◽  
Dielectric Constants ◽  
Interlayer Dielectric ◽  
Inductively Coupled ◽  
Inductively Coupled Plasma Reactor ◽  
Low K

AbstractOrganosilicate materials with dielectric constants (k) ranging from 3.0 to 2.2 are in production or under development for use as interlayer dielectric materials in advanced interconnect logic technology. The dielectric constant of these materials is lowered through the addition of porosity which lowers the film density, making the patterning of these materials difficult. The etching kinetics and surface roughening of a series of low-k dielectric materials with varying porosity and composition were investigated as a function of ion beam angle in a 7% C4F8/Ar chemistry in an inductively-coupled plasma reactor. A similar set of low-k samples were patterned in a single damascene scheme. With a basic understanding of the etching process, we will show that it is possible to proactively design a low-k material that is optimized for a given patterning. A case study will be used to illustrate this point.

scholarly journals Growth and characterization of MMA/SiO2 hybrid low-k thin films for interlayer dielectric applications

2010 ◽  
Vol 33 (3) ◽  
pp. 197-201 ◽  
Author(s):  
Bhavana N. Joshi ◽  
M. A. More ◽  
A. M. Mahajan
Keyword(s):  
Thin Films ◽  
Interlayer Dielectric ◽  
Low K

Thermal stability and structural evolution of low-K Fluorinated amorphous carbon during thermal annealing

1998 ◽  
Vol 511 ◽  
Author(s):  
Hongning Yang ◽  
Douglas J. Tweet ◽  
Yanjun Ma ◽  
Tue Nguyen ◽  
David R. Evans ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Dielectric Constant ◽  
Thermal Annealing ◽  
Structural Evolution ◽  
Fluorine Concentration ◽  
Interlayer Dielectric ◽  
Profound Impact ◽  
Initial Stage ◽  
Stress Changes ◽  
Low K

ABSTRACTHighly crosslinked a-F:C films can undergo a significant change after thermal annealing, where the film expands by ∼3%, the density reduces by ∼10% and the internal stress changes from compressive to tensile. The loss of fluorine concentration and the reduction of CF. are accompanied by the transition of (C-C, sp3) to (C=C, sp2) groups. After annealing, the dielectric constant is reduced and the leakage current increases slightly. Most importantly, these changes occur only at the initial stage of annealing. After the initial annealing, the a-F:C film tends to be thermally stable and retains reasonably good electrical properties as a low-k interlayer dielectric. The profound impact of these results on Cu/a-F:C integration will be briefly discussed.

Effects of Supercritical CO2 Drying and Photoresist Strip on Low-k Films

2003 ◽  
Vol 766 ◽  
Author(s):  
R.F. Reidy ◽  
Zhengping Zhang ◽  
R.A. Orozco-Teran ◽  
B.P. Gorman ◽  
D.W. Mueller
Keyword(s):  
Dielectric Constant ◽  
Porous Materials ◽  
Transport Properties ◽  
Supercritical Co2 ◽  
Polar Molecule ◽  
Interlayer Dielectric ◽  
Highly Porous Materials ◽  
Supercritical Co2 Drying ◽  
Low K ◽  
Highly Porous

AbstractFuture interlayer dielectric (ILD) requirements necessitate reductions in dielectric constant to 2.1 within four years. Due to gaseous-like transport properties and near liquid-like densities, supercritical methods have been developed to dry and strip resist from these highly porous materials. Although a non-polar molecule, the solvating capability of supercritical CO2 (SCCO2) can be tailored by varying pressure, temperature, and co-solvents. This flexibility has been employed to remove photoresist and moisture from porous low-k films. The results of these experiments have been characterized using FTIR, ellipsometry, and SEM.

scholarly journals The Evolution of Organosilicon Precursors for Low-k Interlayer Dielectric Fabrication Driven by Integration Challenges

Materials ◽  
2021 ◽  
Vol 14 (17) ◽  
pp. 4827
Author(s):  
Nianmin Hong ◽  
Yinong Zhang ◽  
Quan Sun ◽  
Wenjie Fan ◽  
Menglu Li ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Data Storage ◽  
Integrated Circuit ◽  
Porous Silica ◽  
Dielectric Materials ◽  
Interlayer Dielectric ◽  
Damascene Process ◽  
Key Issues ◽  
Deposition Processes ◽  
Low K

Since the application of silicon materials in electronic devices in the 1950s, microprocessors are continuously getting smaller, faster, smarter, and larger in data storage capacity. One important factor that makes progress possible is decreasing the dielectric constant of the insulating layer within the integrated circuit (IC). Nevertheless, the evolution of interlayer dielectrics (ILDs) is not driven by a single factor. At first, the objective was to reduce the dielectric constant (k). Reduction of the dielectric constant of a material can be accomplished by selecting chemical bonds with low polarizability and introducing porosity. Moving from silicon dioxide, silsesquioxane-based materials, and silica-based materials to porous silica materials, the industry has been able to reduce the ILDs’ dielectric constant from 4.5 to as low as 1.5. However, porous ILDs are mechanically weak, thermally unstable, and poorly compatible with other materials, which gives them the tendency to absorb chemicals, moisture, etc. All these features create many challenges for the integration of IC during the dual-damascene process, with plasma-induced damage (PID) being the most devastating one. Since the discovery of porous materials, the industry has shifted its focus from decreasing ILDs’ dielectric constant to overcoming these integration challenges. More supplementary precursors (such as Si-C-Si structured compounds), deposition processes (such as NH3 plasma treatment), and post porosity plasma protection treatment (P4) were invented to solve integration-related challenges. Herein, we present the evolution of interlayer dielectric materials driven by the following three aspects, classification of dielectric materials, deposition methods, and key issues encountered and solved during the integration phase. We aim to provide a brief overview of the development of low-k dielectric materials over the past few decades.

TDDB in a Deuterated Low-k Interlayer Dielectric

2019 ◽  
Author(s):  
J. R. Lloyd ◽  
P. M. Lenahan ◽  
N. Mahmud ◽  
R. J. Waskiewicz
Keyword(s):  
Interlayer Dielectric ◽  
Low K
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