Quantum Mechanical Treatment of Si-O Bond Breakage in Silica Under Time Dependent Dielectric Breakdown Testing

2007 ◽  
Author(s):  
J. W. McPherson
Keyword(s):  
Mechanical Treatment ◽  
Dielectric Breakdown ◽  
Time Dependent ◽  
Quantum Mechanical ◽  
Time Dependent Dielectric Breakdown ◽  
Quantum Mechanical Treatment ◽  
Bond Breakage

PHYSICS AND CHEMISTRY OF INTRINSIC TIME-DEPENDENT DIELECTRIC BREAKDOWN IN SiO2 DIELECTRICS

2001 ◽  
Vol 11 (03) ◽  
pp. 751-787 ◽  
Author(s):  
J. W. McPHERSON
Keyword(s):  
Elevated Temperatures ◽  
Dielectric Breakdown ◽  
Oxide Thickness ◽  
Time Dependent ◽  
Hole Injection ◽  
Time Dependent Dielectric Breakdown ◽  
Bond Breakage ◽  
Bond Strengths ◽  
Breakage Mechanism ◽  
Molecular Bonding

A molecular physics-based complementary model, which includes both field-induced and current-induced degradation mechanisms, is used to help resolve the E versus 1/E time-dependent dielectric breakdown (TDDB) model controversy that has existed for many years. The Complementary Model indicates either the E or 1/E–TDDB model can be valid for certain specified field, temperature, and molecular bonding-energy ranges. For bond strengths <3 eV, the bond breakage rate is generally dominated by field-enhanced thermal processes at lower fields and elevated temperatures where the E-model is valid. At higher fields, lower temperatures and higher bond strengths the bond breakage mechanism must be hole-catalyzed and the TDDB physics is described well by the 1/E-model. Neither the E-model nor 1/E-model works well for oxide thickness below tox < 4 nm where direct tunneling effects dominate in these hyper-thin films. The increase in DT leakage leads to more hole injection and trapping in the SiO 2. This enhanced dielectric degradation rate with tox reduction can be easily incorporated into the Complementary Model where hole capture serves to catalyze Si–O bond breakage.

TIME-DEPENDENT QUANTUM MECHANICAL TREATMENT OF He–CO INELASTIC SCATTERING

2004 ◽  
Vol 03 (03) ◽  
pp. 291-303 ◽  
Author(s):  
SINAN AKPINAR ◽  
NIYAZI BULUT ◽  
FAHRETTIN GOGTAS
Keyword(s):  
Wave Packet ◽  
Mechanical Treatment ◽  
Total Angular Momentum ◽  
Time Dependent ◽  
Quantum Mechanical ◽  
Discrete Variable ◽  
Discrete Variable Representation ◽  
Quantum Mechanical Treatment ◽  
Quantum Wave ◽  
Variable Representation

The state-to-state and state-to-all reaction probabilities for He + CO (v,j)→ He + CO (v',j') reaction at zero total angular momentum have been calculated by using a time-dependent quantum wave packet method. The time-dependent method used is based on Fourier Grid and Discrete Variable Representation (DVR) techniques. The time-dependent propagation of the wave packet is accomplished by an expansion in terms of modified complex chebyshev polynomials. The results show that the He + CO reaction is not reactive in the studied energy range.

Assessment of Reliability of cap layers used in Cu-Black DiamondTM Interconnects

2003 ◽  
Vol 766 ◽  
Author(s):  
Ahila Krishnamoorthy ◽  
N.Y. Huang ◽  
Shu-Yunn Chong
Keyword(s):  
Dielectric Layer ◽  
Dielectric Breakdown ◽  
Copper Ions ◽  
Dielectric Strength ◽  
Time Dependent ◽  
Breakdown Field ◽  
Field Range ◽  
Time Dependent Dielectric Breakdown ◽  
Voltage Ramp ◽  
Low K

AbstractBlack DiamondTM. (BD) is one of the primary candidates for use in copper-low k integration. Although BD is SiO2 based, it is vastly different from oxide in terms of dielectric strength and reliability. One of the main reliability concerns is the drift of copper ions under electric field to the surrounding dielectric layer and this is evaluated by voltage ramp (V-ramp) and time dependent dielectric breakdown (TDDB). Metal 1 and Metal 2 intralevel comb structures with different metal widths and spaces were chosen for dielectric breakdown studies. Breakdown field of individual test structures were obtained from V-ramp tests in the temperature range of 30 to 150°C. TDDB was performed in the field range 0.5 – 2 MV/cm. From the leakage between combs at the same level (either metal 1 or metal 2) Cu drift through SiC/BD or SiN/BD interface was characterized. It was found that Cu/barrier and barrier/low k interfaces functioned as easy paths for copper drift thereby shorting the lines. Cu/SiC was found to provide a better interface than Cu/SiN.

scholarly journals IMPLICATIONS OF A QUANTUM MECHANICAL TREATMENT OF THE UNIVERSE

1998 ◽  
Vol 13 (05) ◽  
pp. 347-351 ◽  
Author(s):  
MURAT ÖZER
Keyword(s):  
Quantum Mechanics ◽  
Wave Packet ◽  
Early Universe ◽  
Mechanical Treatment ◽  
Correspondence Principle ◽  
Scale Factor ◽  
Quantum Mechanical ◽  
Quantum Mechanical Treatment ◽  
The Standard Model ◽  
The Universe

We attempt to treat the very early Universe according to quantum mechanics. Identifying the scale factor of the Universe with the width of the wave packet associated with it, we show that there cannot be an initial singularity and that the Universe expands. Invoking the correspondence principle, we obtain the scale factor of the Universe and demonstrate that the causality problem of the standard model is solved.

Quantum-mechanical treatment of the Skyrme Lagrangean, and a new mass term

1987 ◽  
Vol 58 (7) ◽  
pp. 651-653 ◽  
Author(s):  
K. Fujii ◽  
K-I. Sato ◽  
N. Toyota ◽  
A. P. Kobushkin
Keyword(s):  
Mechanical Treatment ◽  
Mass Term ◽  
Quantum Mechanical ◽  
Quantum Mechanical Treatment

Noise Analysis of the Leakage Current in Time-Dependent Dielectric Breakdown in a GaN SLCFET

2021 ◽  
Vol 68 (5) ◽  
pp. 2220-2225
Author(s):  
Stefano Dalcanale ◽  
Michael J. Uren ◽  
Josephine Chang ◽  
Ken Nagamatsu ◽  
Justin A. Parke ◽  
...  
Keyword(s):  
Leakage Current ◽  
Dielectric Breakdown ◽  
Noise Analysis ◽  
Time Dependent ◽  
Time Dependent Dielectric Breakdown

On the quantum mechanical treatment of solvent effects

1980 ◽  
Vol 55 (4) ◽  
pp. 307-318 ◽  
Author(s):  
Bernard Theodoor Thole ◽  
Petrus Theodorus Duijnen
Keyword(s):  
Solvent Effects ◽  
Mechanical Treatment ◽  
Quantum Mechanical ◽  
Quantum Mechanical Treatment
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