Field-enhanced Si–Si bond-breakage mechanism for time-dependent dielectric breakdown in thin-film SiO2 dielectrics

1997 ◽  
Vol 71 (8) ◽  
pp. 1101-1103 ◽  
Author(s):  
J. W. McPherson ◽  
V. K. Reddy ◽  
H. C. Mogul
Keyword(s):  
Thin Film ◽  
Dielectric Breakdown ◽  
Time Dependent ◽  
Time Dependent Dielectric Breakdown ◽  
Bond Breakage ◽  
Breakage Mechanism

PHYSICS AND CHEMISTRY OF INTRINSIC TIME-DEPENDENT DIELECTRIC BREAKDOWN IN SiO2 DIELECTRICS

2001 ◽  
Vol 11 (03) ◽  
pp. 751-787 ◽  
Author(s):  
J. W. McPHERSON
Keyword(s):  
Elevated Temperatures ◽  
Dielectric Breakdown ◽  
Oxide Thickness ◽  
Time Dependent ◽  
Hole Injection ◽  
Time Dependent Dielectric Breakdown ◽  
Bond Breakage ◽  
Bond Strengths ◽  
Breakage Mechanism ◽  
Molecular Bonding

A molecular physics-based complementary model, which includes both field-induced and current-induced degradation mechanisms, is used to help resolve the E versus 1/E time-dependent dielectric breakdown (TDDB) model controversy that has existed for many years. The Complementary Model indicates either the E or 1/E–TDDB model can be valid for certain specified field, temperature, and molecular bonding-energy ranges. For bond strengths <3 eV, the bond breakage rate is generally dominated by field-enhanced thermal processes at lower fields and elevated temperatures where the E-model is valid. At higher fields, lower temperatures and higher bond strengths the bond breakage mechanism must be hole-catalyzed and the TDDB physics is described well by the 1/E-model. Neither the E-model nor 1/E-model works well for oxide thickness below tox < 4 nm where direct tunneling effects dominate in these hyper-thin films. The increase in DT leakage leads to more hole injection and trapping in the SiO 2. This enhanced dielectric degradation rate with tox reduction can be easily incorporated into the Complementary Model where hole capture serves to catalyze Si–O bond breakage.

Assessment of Reliability of cap layers used in Cu-Black DiamondTM Interconnects

2003 ◽  
Vol 766 ◽  
Author(s):  
Ahila Krishnamoorthy ◽  
N.Y. Huang ◽  
Shu-Yunn Chong
Keyword(s):  
Dielectric Layer ◽  
Dielectric Breakdown ◽  
Copper Ions ◽  
Dielectric Strength ◽  
Time Dependent ◽  
Breakdown Field ◽  
Field Range ◽  
Time Dependent Dielectric Breakdown ◽  
Voltage Ramp ◽  
Low K

AbstractBlack DiamondTM. (BD) is one of the primary candidates for use in copper-low k integration. Although BD is SiO2 based, it is vastly different from oxide in terms of dielectric strength and reliability. One of the main reliability concerns is the drift of copper ions under electric field to the surrounding dielectric layer and this is evaluated by voltage ramp (V-ramp) and time dependent dielectric breakdown (TDDB). Metal 1 and Metal 2 intralevel comb structures with different metal widths and spaces were chosen for dielectric breakdown studies. Breakdown field of individual test structures were obtained from V-ramp tests in the temperature range of 30 to 150°C. TDDB was performed in the field range 0.5 – 2 MV/cm. From the leakage between combs at the same level (either metal 1 or metal 2) Cu drift through SiC/BD or SiN/BD interface was characterized. It was found that Cu/barrier and barrier/low k interfaces functioned as easy paths for copper drift thereby shorting the lines. Cu/SiC was found to provide a better interface than Cu/SiN.

Noise Analysis of the Leakage Current in Time-Dependent Dielectric Breakdown in a GaN SLCFET

2021 ◽  
Vol 68 (5) ◽  
pp. 2220-2225
Author(s):  
Stefano Dalcanale ◽  
Michael J. Uren ◽  
Josephine Chang ◽  
Ken Nagamatsu ◽  
Justin A. Parke ◽  
...  
Keyword(s):  
Leakage Current ◽  
Dielectric Breakdown ◽  
Noise Analysis ◽  
Time Dependent ◽  
Time Dependent Dielectric Breakdown
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