xAnalog Device and Circuit Performance Degradation Under Substrate Bias Enhanced Hot Carrier Stress

2006 IEEE International Reliability Physics Symposium Proceedings ◽

10.1109/relphy.2006.251263 ◽

2006 ◽

Cited By ~ 2

Author(s):

K. Narasimhulu ◽

V. Rao

Keyword(s):

Performance Degradation ◽

Substrate Bias ◽

Circuit Performance ◽

Hot Carrier ◽

Hot Carrier Stress

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RF circuit performance degradation due to hot carrier effects and soft breakdown

The 2002 45th Midwest Symposium on Circuits and Systems, 2002. MWSCAS-2002. ◽

10.1109/mwscas.2002.1187142 ◽

2003 ◽

Cited By ~ 3

Author(s):

Enjun Xiao ◽

J.S. Yuan

Keyword(s):

Performance Degradation ◽

Circuit Performance ◽

Hot Carrier ◽

Hot Carrier Effects ◽

Soft Breakdown ◽

Rf Circuit

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A new test structure for direct measurement of hot-carrier stress effects on CMOS circuit performance

IEEE Transactions on Electron Devices ◽

10.1109/16.119039 ◽

1991 ◽

Vol 38 (8) ◽

pp. 1958-1959 ◽

Cited By ~ 2

Author(s):

S.C. Hu ◽

M.P. Brassington

Keyword(s):

Direct Measurement ◽

Test Structure ◽

Cmos Circuit ◽

Circuit Performance ◽

Hot Carrier ◽

Stress Effects ◽

Hot Carrier Stress

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Direct measurement of hot-carrier stress effects on CMOS circuit performance

IEEE Transactions on Electron Devices ◽

10.1109/16.43702 ◽

1989 ◽

Vol 36 (11) ◽

pp. 2604-2605

Author(s):

S.C. Hu ◽

M.P. Brassington

Keyword(s):

Direct Measurement ◽

Cmos Circuit ◽

Circuit Performance ◽

Hot Carrier ◽

Stress Effects ◽

Hot Carrier Stress

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RF circuit performance degradation due to soft breakdown and hot carrier effect in 0.18 μm CMOS technology

2001 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium (IEEE Cat. No.01CH37173) ◽

10.1109/rfic.2001.935661 ◽

2002 ◽

Author(s):

Qiang Li ◽

Jinlong Zhang ◽

Wei Li ◽

J.S. Yuan ◽

Yuan Chen ◽

...

Keyword(s):

Cmos Technology ◽

Performance Degradation ◽

Circuit Performance ◽

Hot Carrier ◽

Carrier Effect ◽

Hot Carrier Effect ◽

Soft Breakdown ◽

Rf Circuit

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RF circuit performance degradation due to soft breakdown and hot-carrier effect in deep-submicrometer CMOS technology

IEEE Transactions on Microwave Theory and Techniques ◽

10.1109/22.942565 ◽

2001 ◽

Vol 49 (9) ◽

pp. 1546-1551 ◽

Cited By ~ 38

Author(s):

Qiang Li ◽

Jinlong Zhang ◽

Wei Li ◽

J.S. Yuan ◽

Yuan Chen ◽

...

Keyword(s):

Cmos Technology ◽

Performance Degradation ◽

Circuit Performance ◽

Hot Carrier ◽

Carrier Effect ◽

Deep Submicrometer ◽

Hot Carrier Effect ◽

Soft Breakdown ◽

Rf Circuit

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HOT CARRIER STRESS INDUCED CHANGES IN MOST TRANSCONDUCTANCE STRUCTURE

Le Journal de Physique Colloques ◽

10.1051/jphyscol:19884163 ◽

1988 ◽

Vol 49 (C4) ◽

pp. C4-779-C4-782 ◽

Cited By ~ 1

Author(s):

C. BERGONZONI ◽

R. BENECCHI ◽

P. CAPRARA

Keyword(s):

Hot Carrier ◽

Hot Carrier Stress ◽

Induced Changes

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Stochastic and Deterministic Modeling Frameworks for Time Kinetics of Gate Insulator Traps During and After Hot Carrier Stress in MOSFETs

2021 IEEE International Reliability Physics Symposium (IRPS) ◽

10.1109/irps46558.2021.9405155 ◽

2021 ◽

Author(s):

Satyam Kumar ◽

Tarun Samadder ◽

Karansingh Thakor ◽

Uma Sharma ◽

Souvik Mahapatra

Keyword(s):

Gate Insulator ◽

Hot Carrier ◽

Deterministic Modeling ◽

Hot Carrier Stress ◽

Kinetics Of

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Degradation induced by TID radiation and hot-carrier stress in 130-nm short channel PDSOI NMOSFETs

Microelectronics Reliability ◽

10.1016/j.microrel.2017.05.021 ◽

2017 ◽

Vol 74 ◽

pp. 74-80 ◽

Cited By ~ 6

Author(s):

Lihua Dai ◽

Xiaonian Liu ◽

Mengying Zhang ◽

Leqing Zhang ◽

Zhiyuan Hu ◽

...

Keyword(s):

Short Channel ◽

Hot Carrier ◽

Hot Carrier Stress

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A refined forward gated-diode method for separating front channel hot-carrier-stress induced front and back gate interface and oxide traps in SOI NMOSFETs

Semiconductor Science and Technology ◽

10.1088/0268-1242/17/5/314 ◽

2002 ◽

Vol 17 (5) ◽

pp. 487-492 ◽

Cited By ~ 5

Author(s):

Jin He ◽

Xing Zhang ◽

Ru Huang ◽

Yangyuan Wang

Keyword(s):

Back Gate ◽

Hot Carrier ◽

Hot Carrier Stress ◽

Oxide Traps

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Hot-carrier stress damage in the gate 'off' state in n-channel transistors

IEEE Transactions on Electron Devices ◽

10.1109/16.141249 ◽

1992 ◽

Vol 39 (7) ◽

pp. 1774-1776 ◽

Cited By ~ 10

Author(s):

B.S. Doyle ◽

K.R. Mistry

Keyword(s):

Hot Carrier ◽

Hot Carrier Stress ◽

Stress Damage

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