Hot-carrier stress induced low-frequency noise degradation in 0.13 μm and 0.18 μm RF CMOS technologies
Keyword(s):
Rf Cmos
◽
2012 ◽
Vol 33
(11)
◽
pp. 1538-1540
◽
Keyword(s):
Keyword(s):
2011 ◽
Vol 58
(3)
◽
pp. 812-818
◽
Keyword(s):
Keyword(s):
2004 ◽
Vol 48
(6)
◽
pp. 985-997
◽
1996 ◽
Vol 51-52
◽
pp. 585-596
◽
2007 ◽
Vol 47
(4-5)
◽
pp. 577-580
◽