Reliability properties of low voltage PZT ferroelectric capacitors and arrays

2004 ◽  
Author(s):  
J. Rodriguez ◽  
K. Remack ◽  
K. Boku ◽  
K.R. Udayakumar ◽  
S. Aggarwal ◽  
...  
Keyword(s):  
Low Voltage ◽  
Ferroelectric Capacitors

Lead based ferroelectric capacitors for low voltage non-volatile memory applications

1998 ◽  
Vol 19 (1-4) ◽  
pp. 159-177 ◽  
Author(s):  
S. Aggarwal ◽  
A. S. Prakash ◽  
T. K. Song ◽  
S. Sadashivan ◽  
A. M. Dhote ◽  
...  
Keyword(s):  
Low Voltage ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Memory Applications ◽  
Ferroelectric Capacitors

Reliability Properties of Low-Voltage Ferroelectric Capacitors and Memory Arrays

2004 ◽  
Vol 4 (3) ◽  
pp. 436-449 ◽  
Author(s):  
J.A. Rodriguez ◽  
K. Remack ◽  
K. Boku ◽  
K.R. Udayakumar ◽  
S. Aggarwal ◽  
...  
Keyword(s):  
Low Voltage ◽  
Memory Arrays ◽  
Ferroelectric Capacitors

Downscaling of Pb(Zr,Ti)O3 film thickness for low-voltage ferroelectric capacitors: Effect of charge relaxation at the interfaces

2000 ◽  
Vol 88 (4) ◽  
pp. 2154-2156 ◽  
Author(s):  
I. Stolichnov ◽  
A. Tagantsev ◽  
E. Colla ◽  
S. Gentil ◽  
S. Hiboux ◽  
...  
Keyword(s):  
Film Thickness ◽  
Low Voltage ◽  
Charge Relaxation ◽  
Ferroelectric Capacitors

Low-Voltage Pb(Zr,Ti)O3 Film Capacitors: Control of Charge Relaxation at the Interfaces

1999 ◽  
Vol 596 ◽  
Author(s):  
I. Stolichnov ◽  
A. Tagantsev ◽  
S. Gentil ◽  
S. Hiboux ◽  
P. Muralt ◽  
...  
Keyword(s):  
Size Effects ◽  
Low Voltage ◽  
Charge Injection ◽  
Fatigue Performance ◽  
Charge Relaxation ◽  
Positive Effects ◽  
Pzt Film ◽  
Electrode Interface ◽  
Ferroelectric Capacitors ◽  
Ferroelectric Switching

AbstractIt is suggested that the processes of charge injection and entrapment at the interfacial layer of Pb(Zr,Ti)O3 (PZT) film capacitors are responsible for both polarization fatigue and size effects on ferroelectric switching. The study of the charge injection by analyzing the dependence of coercive field on maximum polarization shows that there is a direct relationship between the charge injection properties and fatigue performance. Based on our results, we conclude that enhancement of charge relaxation at the interfaces of PZT capacitors results in two positive effects: improvement of polarization fatigue performance and suppression of size effects on ferroelectric switching, which are detrimental for low-voltage PZT film capacitors.This idea has been implemented experimentally by introducing a thin RuO2 layer into the top-electrode interface of the Pt/PZT/Pt capacitor. PZT film capacitors of 100–170 nm thickness prepared in this way exhibited substantially improved fatigue in combination with weak size effects, which allows reduction of the operation voltage down to 0.8 V without degradation of the hysteresis properties. Our results show that the control of charge relaxation at the interface is a key issue for development of the low-voltage ferroelectric capacitors.

Transient Behavior of the Polarization in Ferroelectric Thin Film Capacitors

2000 ◽  
Vol 655 ◽  
Author(s):  
Oliver Lohse ◽  
Michael Grossmann ◽  
Dierk Bolten ◽  
Ulrich Boettger ◽  
Rainer Waser
Keyword(s):  
Thin Films ◽  
Low Voltage ◽  
Ferroelectric Thin Film ◽  
Transient Behavior ◽  
Polarization Switching ◽  
Switching Behavior ◽  
Ferroelectric Capacitor ◽  
Low Voltage Operation ◽  
High K Materials ◽  
Ferroelectric Capacitors

AbstractThe understanding of the polarization switching process of ferroelectric capacitors is highly relevant for the development and optimization of FeRAM devices. We report on the characterization of Pb(Zr,Ti)O3 thin films which have been studied by means of dedicated rectangle pulse measurements. Decreasing the voltage level of the excitation pulses decelerates the polarization switching significantly to the range of milliseconds and reduces the switchable polarization. In this work the influence of niobium (Nb) doping on the switching properties of PZT thin films prepared by CSD are investigated to reach the aspired conditions of low voltage operation, read and write access pulses in the range of nanoseconds. For the implementation of the transient behavior of ferroelectric capacitors in circuit design and simulation tools it is necessary to develop a model which precisely describes the polarization hysteresis, the pulse switching behavior as well as the small signal capacitance. The fundamental considerations for this model are presented, based on an ideal ferroelectric capacitor, taking into account the Curie-von Schweidler behavior. The latter is observed in non-ferroelectric high-K materials as well as in ferroelectric thin films.

Processing of human melanoma cells for correlative TEM, LVSEM, and LM

1991 ◽  
Vol 49 ◽  
pp. 106-107
Author(s):  
Marek Malecki ◽  
J. Victor Small ◽  
James Pawley
Keyword(s):  
Electron Microscopy ◽  
Low Voltage ◽  
Fluorescent Microscopy ◽  
Blood Stream ◽  
Surface Topology ◽  
Integrin Receptors ◽  
Transmission Electron ◽  
Develop Technology ◽  
Voltage Scanning ◽  
Mechanisms Of Adhesion

The relative roles of adhesion and locomotion in malignancy have yet to be clearly established. In a tumor, subpopulations of cells may be recognized according to their capacity to invade neighbouring tissue,or to enter the blood stream and metastasize. The mechanisms of adhesion and locomotion are themselves tightly linked to the cytoskeletal apparatus and cell surface topology, including expression of integrin receptors. In our studies on melanomas with Fluorescent Microscopy (FM) and Cell Sorter(FACS), we noticed that cells in cultures derived from metastases had more numerous actin bundles, then cells from primary foci. Following this track, we attempted to develop technology allowing to compare ultrastructure of these cells using correlative Transmission Electron Microscopy(TEM) and Low Voltage Scanning Electron Microscopy(LVSEM).

High-pressure freezing of cells in suspension for low-voltage scanning electron microscopy (LVSEM)

1991 ◽  
Vol 49 ◽  
pp. 64-65
Author(s):  
Marek Malecki ◽  
James Pawley ◽  
Hans Ris
Keyword(s):  
Electron Microscopy ◽  
High Pressure ◽  
Low Voltage ◽  
Culture Media ◽  
Cell Structure ◽  
Freeze Substitution ◽  
Ice Crystal ◽  
High Pressure Freezing ◽  
Cell Culture Media ◽  
Voltage Scanning

The ultrastructure of cells suspended in physiological fluids or cell culture media can only be studied if the living processes are stopped while the cells remain in suspension. Attachment of living cells to carrier surfaces to facilitate further processing for electron microscopy produces a rapid reorganization of cell structure eradicating most traces of the structures present when the cells were in suspension. The structure of cells in suspension can be immobilized by either chemical fixation or, much faster, by rapid freezing (cryo-immobilization). The fixation speed is particularly important in studies of cell surface reorganization over time. High pressure freezing provides conditions where specimens up to 500μm thick can be frozen in milliseconds without ice crystal damage. This volume is sufficient for cells to remain in suspension until frozen. However, special procedures are needed to assure that the unattached cells are not lost during subsequent processing for LVSEM or HVEM using freeze-substitution or freeze drying. We recently developed such a procedure.

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