Parasitic bipolar transistor model using generated-hole-dependent base resistance

2002 ◽  
Author(s):  
K. Suzuki ◽  
F. Anzai ◽  
T. Nomura ◽  
S. Satoh
Keyword(s):  
Bipolar Transistor ◽  
Base Resistance ◽  
Transistor Model ◽  
Parasitic Bipolar Transistor

12-ps ECL using low-base-resistance Si bipolar transistor by self-aligned metal/IDP technology

1997 ◽  
Vol 44 (12) ◽  
pp. 2207-2212 ◽  
Author(s):  
T. Onai ◽  
E. Ohue ◽  
M. Tanabe ◽  
K. Washio
Keyword(s):  
Bipolar Transistor ◽  
Base Resistance

Computer-Aided Bipolar Transistor Model (Part 2) Parameter Measurement

1979 ◽  
Vol 25 (9) ◽  
pp. 377-382
Author(s):  
N.D. Arora ◽  
Nimmi Bhatia ◽  
N.H. Godhwani ◽  
K.C. Chhabra
Keyword(s):  
Bipolar Transistor ◽  
Parameter Measurement ◽  
Computer Aided ◽  
Transistor Model

VBIC95: An improved vertical, IC bipolar transistor model

2002 ◽  
Author(s):  
C. McAndrew ◽  
J. Seitchik ◽  
D. Bowers ◽  
M. Dunn ◽  
M. Foisy ◽  
...  
Keyword(s):  
Bipolar Transistor ◽  
Transistor Model

scholarly journals 300°C GaN/AlGaN Heterojunction Bipolar Transistor

1998 ◽  
Vol 3 ◽  
Author(s):  
Fan Ren ◽  
Cammy R. Abernathy ◽  
J. M. Van Hove ◽  
P. P. Chow ◽  
R. Hickman ◽  
...  
Keyword(s):  
Elevated Temperatures ◽  
Hole Concentration ◽  
Dry Etching ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Base Resistance

A GaN/AlGaN heterojunction bipolar transistor has been fabricated using Cl2/Ar dry etching for mesa formation. As the hole concentration increases due to more efficient ionization of the Mg acceptors at elevated temperatures (> 250°C), the device shows improved gain. Future efforts should focus on methods for reducing base resistance, which are briefly summarized.

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