Proceedings of Bipolar/Bicmos Circuits and Technology Meeting
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A 5-GHz SiGe HBT return-to-zero comparator

Proceedings of Bipolar/Bicmos Circuits and Technology Meeting ◽

10.1109/bipol.1995.493890 ◽

2002 ◽

Cited By ~ 3

Author(s):

W. Gao ◽

W.M. Snelgrove ◽

T. Varelas ◽

S.J. Kovacic ◽

D.L. Harame

Keyword(s):

Sige Hbt ◽

5 Ghz

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Improved collector transit time with ballistic pipi-structure in the npn-AlGaAs/GaAs HBT

Proceedings of Bipolar/Bicmos Circuits and Technology Meeting ◽

10.1109/bipol.1995.493861 ◽

2002 ◽

Author(s):

D.M. Kim ◽

S.H. Song

Keyword(s):

Transit Time

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A soft-error-immune 0.9-ns 1.15-Mb ECL-CMOS SRAM with 30-ps 120 k logic gates and on-chip test circuitry

Proceedings of Bipolar/Bicmos Circuits and Technology Meeting ◽

10.1109/bipol.1995.493863 ◽

2002 ◽

Cited By ~ 2

Author(s):

K. Higeta ◽

M. Usami ◽

M. Ohayashi ◽

Y. Fujimura ◽

M. Nishiyama ◽

...

Keyword(s):

Logic Gates ◽

Soft Error ◽

On Chip

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VBIC95: An improved vertical, IC bipolar transistor model

Proceedings of Bipolar/Bicmos Circuits and Technology Meeting ◽

10.1109/bipol.1995.493891 ◽

2002 ◽

Cited By ~ 30

Author(s):

C. McAndrew ◽

J. Seitchik ◽

D. Bowers ◽

M. Dunn ◽

M. Foisy ◽

...

Keyword(s):

Bipolar Transistor ◽

Transistor Model

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Signal isolation in BiCMOS mixed mode integrated circuits

Proceedings of Bipolar/Bicmos Circuits and Technology Meeting ◽

10.1109/bipol.1995.493892 ◽

2002 ◽

Cited By ~ 16

Author(s):

K. Joardar

Keyword(s):

Integrated Circuits ◽

Mixed Mode ◽

Signal Isolation

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A critique of the turn-on physics of power bipolar devices

Proceedings of Bipolar/Bicmos Circuits and Technology Meeting ◽

10.1109/bipol.1995.493900 ◽

2002 ◽

Cited By ~ 6

Author(s):

S. Pendharkar ◽

K. Shenai

Keyword(s):

Turn On ◽

Bipolar Devices

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Extraction of thermal parameters for bipolar circuit simulation

Proceedings of Bipolar/Bicmos Circuits and Technology Meeting ◽

10.1109/bipol.1995.493871 ◽

2002 ◽

Author(s):

D.T. Zweidinger ◽

R.M. Fox ◽

S.G. Lee ◽

T. Jung

Keyword(s):

Circuit Simulation ◽

Thermal Parameters ◽

Bipolar Circuit

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Integrated MOSFET interface for a synchronously-rectified SMPS

Proceedings of Bipolar/Bicmos Circuits and Technology Meeting ◽

10.1109/bipol.1995.493866 ◽

2002 ◽

Cited By ~ 2

Author(s):

A. Hastings

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A unified diode model with self-heating effects

Proceedings of Bipolar/Bicmos Circuits and Technology Meeting ◽

10.1109/bipol.1995.493867 ◽

2002 ◽

Cited By ~ 7

Author(s):

H.A. Mantooth

Keyword(s):

Self Heating ◽

Heating Effects

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The pn-junction as an inductive design component in silicon IC processes

Proceedings of Bipolar/Bicmos Circuits and Technology Meeting ◽

10.1109/bipol.1995.493880 ◽

2002 ◽

Author(s):

G.A.M. Hurkx ◽

P.G.M. Baltus ◽

J.A.M. de Boet ◽

J.A.M. Geelen ◽

J.J.E.M. Hageraats

Keyword(s):

Design Component ◽

Pn Junction

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Proceedings of Bipolar/Bicmos Circuits and Technology MeetingLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

A 5-GHz SiGe HBT return-to-zero comparator

Improved collector transit time with ballistic pipi-structure in the npn-AlGaAs/GaAs HBT

A soft-error-immune 0.9-ns 1.15-Mb ECL-CMOS SRAM with 30-ps 120 k logic gates and on-chip test circuitry

VBIC95: An improved vertical, IC bipolar transistor model

Signal isolation in BiCMOS mixed mode integrated circuits

A critique of the turn-on physics of power bipolar devices

Extraction of thermal parameters for bipolar circuit simulation

Integrated MOSFET interface for a synchronously-rectified SMPS

A unified diode model with self-heating effects

The pn-junction as an inductive design component in silicon IC processes

Proceedings of Bipolar/Bicmos Circuits and Technology Meeting
Latest Publications