Gate oxide breakdown model in MOS transistors

1995 ◽  
Author(s):  
Teong-San Yeoh ◽  
N.R. Kamat ◽  
R.S. Nair ◽  
Shze-Jer Hu
Keyword(s):  
Gate Oxide ◽  
Mos Transistors ◽  
Oxide Breakdown ◽  
Breakdown Model

Gate Oxide Breakdown Model in MOS Transistors

1995 ◽  
Author(s):  
Teong-San Yeoh ◽  
Nitin R. Kamat ◽  
Remesh S. Nair ◽  
Shze-Jer Hu
Keyword(s):  
Gate Oxide ◽  
Mos Transistors ◽  
Oxide Breakdown ◽  
Breakdown Model

ESD Failure Analysis and Robustness Design in Vertical-Diffused MOS Transistors

2014 ◽  
Vol 926-930 ◽  
pp. 456-461
Author(s):  
Shen Li Chen ◽  
Wen Ming Lee ◽  
Chi Ling Chu
Keyword(s):  
Failure Analysis ◽  
Oxide Layer ◽  
Failure Mode ◽  
Epitaxial Layer ◽  
Gate Oxide ◽  
The Other ◽  
Mos Transistors ◽  
Oxide Breakdown ◽  
Analysis Techniques ◽  
Silicon Epitaxial Layer

This paper deals with a detailed study of ESD failure mode and how to strengthen of the VDMOS used for power applications. The ESD post-zapped failure of power VDMOS transistors due to HBM, MM, and CDM stresses are examined in this work. Through standard failure analysis techniques by using EMMI and SEM were applied to identify the failure locations. The MM failure mode in this power MOSFET was caused by the gate oxide breakdown near n+ region in the source end as an ESD zapping. And, the ESD failure damage under HBM and CDM stresses were caused by the gate material molten near the gate pad and tunneled through the oxide layer into silicon epitaxial layer. Furthermore, the ESD robustness designs of power VDMOS transistors are also addressed in this work. The first ESD incorporated design is Zener diodes back-to-back clamping the gate-to-source pad, and on the other hand, another one excellent design contains two Zener diodes clamping the gate-to-source and gate-to-drain terminals of a VDMOS, respectively.

Roles of Primary Hot Hole and FN Electron Fluences in Gate Oxide Breakdown

1999 ◽  
Vol 592 ◽  
Author(s):  
M. F. Li ◽  
Y. D. He ◽  
S. G. Ma ◽  
Byung Jin Cho ◽  
K. F. Lo
Keyword(s):  
Gate Oxide ◽  
Critical Value ◽  
Trap Density ◽  
Hole Injection ◽  
Oxide Breakdown ◽  
Breakdown Mechanism ◽  
Oxide Reliability ◽  
Device Operation ◽  
Breakdown Model ◽  
Good Agreement

ABSTRACTIn this work, we report the link between the primary hot hole and Fowler Nordheim (FN) electron injections in oxide breakdown mechanism. A simple breakdown model is established. The experimental method is carefully designed to measure the primary hot hole fluence and FN electron fluence separately and accurately. The calculation based on our model is in very good agreement with our experiments. Oxide breakdown is stimulated by a combined effect when the sum of the trap density Dpri activated by primary hot hole injection and the trap density Dn activated by FN electron injection reaches a critical value Dcri. The hole is two orders of magnitude more effective than FN electron in causing breakdown. Since primary hot hole injection may occurs under many realistic device operation in the circuit, existing oxide lifetime projected from conventional TDDB measurement by only applying FN stress is overestimated in many cases. The model demonstrated in this work lays the groundwork in approaching a more appropriate way for predicting the oxide reliability and lifetime.

A Study of Pad Contamination Defect and Removal

2008 ◽  
Author(s):  
K.A. Mohammad ◽  
L.J. Liu ◽  
S.F. Liew ◽  
S.F. Chong ◽  
D.G. Lee ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Gate Oxide ◽  
Action Plans ◽  
Preventive Action ◽  
Oxide Breakdown ◽  
Reliability Level ◽  
The Future ◽  
Dry Etch ◽  
Removal Technique

Abstract The paper focuses on the pad contamination defect removal technique. The defect is detected at the outgoing inspection step. The failure analysis results showed that the defect is Fluorine type contamination. The failure analysis indicated many source contributors mainly from Fluorine based processes. The focus is in the present work is in the rework method for the removal of this defect. The combination of wet and dry etch processing in the rework routine is utilized for the removal of the defect and preventive action plans for in-line were introduced and implemented to avoid this event in the future. The reliability of the wafer is verified using various tests including full map electrical, electrical sort, gate oxide breakdown (GOI) and wafer reliability level, passivation quick kill to ensure the integrity of the wafer after undergoing the rework routine. The wafer is monitored closely over a period of time to ensure it has no mushroom defect.

Fundamental Considerations for CDM Failure in 90nm Products

2006 ◽  
Author(s):  
Nobuyuki Wakai ◽  
Yuji Kobira ◽  
Hidemitsu Egawa ◽  
Masayoshi Tsutsumi
Keyword(s):  
Breakdown Voltage ◽  
High Speed ◽  
Gate Oxide ◽  
Critical Parameters ◽  
Protection Device ◽  
Oxide Breakdown ◽  
Technology Products ◽  
Charged Device ◽  
Device Size ◽  
Fundamental Consideration

Abstract Fundamental consideration for CDM (Charged Device Model) breakdown was investigated with 90nm technology products and others. According to the result of failure analysis, it was found that gate oxide breakdown was critical failure mode for CDM test. High speed triggered protection device such as ggNMOS and SCR (Thyristor) is effective method to improve its CDM breakdown voltage and an improvement for evaluated products were confirmed. Technological progress which is consisted of down-scaling of protection device size and huge number of IC pins of high function package makes technology vulnerable and causes significant CDM stress. Therefore, it is expected that CDM protection designing tends to become quite difficult. In order to solve these problems in the product, fundamental evaluations were performed. Those are a measurement of discharge parameter and stress time dependence of CDM breakdown voltage. Peak intensity and rise time of discharge current as critical parameters are well correlated their package capacitance. Increasing stress time causes breakdown voltage decreasing. This mechanism is similar to that of TDDB for gate oxide breakdown. Results from experiences and considerations for future CDM reliable designing are explained in this report.

Experimental and Simulation Results of Magnetic Modulation of Gate Oxide Tunneling Current in Nanoscaled MOS Transistors

2015 ◽  
Vol 36 (4) ◽  
pp. 387-389 ◽  
Author(s):  
Gabriela A. Rodriguez-Ruiz ◽  
Edmundo A. Gutierrez-Dominguez ◽  
Arturo Sarmiento-Reyes ◽  
Zlatan Stanojevic ◽  
Hans Kosina ◽  
...  
Keyword(s):  
Tunneling Current ◽  
Gate Oxide ◽  
Mos Transistors ◽  
Simulation Results ◽  
Gate Oxide Tunneling

Explanation of nMOSFET substrate current after hard gate oxide breakdown

2001 ◽  
Vol 59 (1-4) ◽  
pp. 155-160 ◽  
Author(s):  
B Kaczer ◽  
R Degraeve ◽  
A De Keersgieter ◽  
M Rasras ◽  
G Groeseneken
Keyword(s):  
Gate Oxide ◽  
Oxide Breakdown ◽  
Substrate Current
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