scholarly journals Heterostructure bipolar transistors and integrated circuits

1982 ◽  
Vol 70 (1) ◽  
pp. 13-25 ◽  
Author(s):  
H. Kroemer
Keyword(s):  
Integrated Circuits ◽  
Bipolar Transistors

TEM study of phosphorus-implanted pseudomorphic Si0.88Ge0.12 on Si(100)

1995 ◽  
Vol 53 ◽  
pp. 468-469
Author(s):  
N. David Theodore ◽  
Donald Y.C Lie ◽  
J. H. Song ◽  
Peter Crozier
Keyword(s):  
Integrated Circuits ◽  
Heterojunction Bipolar Transistors ◽  
Integrated Circuit ◽  
High Speed ◽  
Room Temperature ◽  
Strain Relaxation ◽  
Bipolar Transistors ◽  
Sige Hbt ◽  
Integrated Circuit Manufacturing ◽  
Microstructural Behavior

SiGe is being extensively investigated for use in heterojunction bipolar-transistors (HBT) and high-speed integrated circuits. The material offers adjustable bandgaps, improved carrier mobilities over Si homostructures, and compatibility with Si-based integrated-circuit manufacturing. SiGe HBT performance can be improved by increasing the base-doping or by widening the base link-region by ion implantation. A problem that arises however is that implantation can enhance strain-relaxation of SiGe/Si.Furthermore, once misfit or threading dislocations result, the defects can give rise to recombination-generation in depletion regions of semiconductor devices. It is of relevance therefore to study the damage and anneal behavior of implanted SiGe layers. The present study investigates the microstructural behavior of phosphorus implanted pseudomorphic metastable Si0.88Ge0.12 films on silicon, exposed to various anneals.Metastable pseudomorphic Si0.88Ge0.12 films were grown ~265 nm thick on a silicon wafer by molecular-beam epitaxy. Pieces of this wafer were then implanted at room temperature with 100 keV phosphorus ions to a dose of 1.5×1015 cm-2.

scholarly journals Modeling and Extraction of Parameters Based on Physical Effects in Bipolar Transistors

2011 ◽  
Vol 2011 ◽  
pp. 1-8
Author(s):  
Agnes Nagy ◽  
Alicia Polanco ◽  
Manuel Alvarez
Keyword(s):  
Integrated Circuits ◽  
Extraction Method ◽  
Bipolar Transistors ◽  
Electronic Systems ◽  
Emission Coefficient ◽  
Physical Explanation ◽  
Simulation Procedure ◽  
Physical Effects ◽  
Precise Simulation ◽  
Theoretical Results

The rising complexity of electronic systems, the reduction of components size, and the increment of working frequencies demand every time more accurate and stable integrated circuits, which require more precise simulation programs during the design process. PSPICE, widely used to simulate the general behavior of integrated circuits, does not consider many of the physical effects that can be found in real devices. Compact models, HICUM and MEXTRAM, have been developed over recent decades, in order to eliminate this deficiency. This paper presents some of the physical aspects that have not been studied so far, such as the expression of base-emitter voltage, including the emitter emission coefficient effect (n), physical explanation and simulation procedure, as well as a new extraction method for the diffusion potentialVDE(T), based on the forward biased base-emitter capacitance, showing excellent agreement between experimental and theoretical results.

A 4H-SiC Bipolar Technology for High-Temperature Integrated Circuits

2013 ◽  
Vol 10 (4) ◽  
pp. 155-162 ◽  
Author(s):  
L. Lanni ◽  
B. G. Malm ◽  
C.-M. Zetterling ◽  
M. Östling
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Low Voltage ◽  
Supply Voltage ◽  
Bipolar Transistors ◽  
Digital Integrated Circuits ◽  
Successful Operation ◽  
Bipolar Technology ◽  
Propagation Delays ◽  
Interconnect Systems

A 4H-SiC bipolar technology suitable for high-temperature integrated circuits is tested with two interconnect systems based on aluminum and platinum. Successful operation of low-voltage bipolar transistors and digital integrated circuits based on emitter coupled logic (ECL) is reported from 27°C up to 500°C for both the metallization systems. When operated on −15 V supply voltage, aluminum and platinum interconnect OR-NOR gates showed stable noise margins of about 1 V and asymmetric propagation delays of about 200 and 700 ns in the whole temperature range for both OR and NOR output. The performance of aluminum and platinum interconnects was evaluated by performing accelerated electromigration tests at 300°C with current density of about 1 MA/cm2 on contact chains consisting of 10 integrated resistors. Although in both cases the contact chains failed after less than one hour, different failure mechanisms were observed for the two metallization systems: electromigration for the aluminum system and poor step coverage and via filling for the platinum system.

VA-5 InGaAs/InP heterojunction bipolar transistors for digital integrated circuits

1984 ◽  
Vol 31 (12) ◽  
pp. 1980-1980
Author(s):  
A.N.M. Masum Choudhury ◽  
K. Tabatabaie-Alavi ◽  
J.C. Vlcek ◽  
H. Kanbe ◽  
C.G. Fonstad
Keyword(s):  
Integrated Circuits ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Digital Integrated Circuits

III-V HETEROJUNCTION BIPOLAR TRANSISTORS FOR HIGH-SPEED APPLICATIONS

1990 ◽  
Vol 01 (03n04) ◽  
pp. 245-301 ◽  
Author(s):  
M.F. CHANG ◽  
P.M. ASBECK
Keyword(s):  
Integrated Circuits ◽  
Heterojunction Bipolar Transistors ◽  
High Speed ◽  
High Performance ◽  
Growth Parameters ◽  
Bipolar Transistors ◽  
System Requirements ◽  
Potential Impact ◽  
Computational Systems ◽  
Very High

Recent advances in communication, radar and computational systems demand very high performance electronic circuits. Heterojunction bipolar transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic device advantages than competing technologies. This paper reviews the present status of GaAs and InP-based HBT technologies and their applications to digital, analog, microwave and multifunction circuits. It begins with a brief review of HBT device concepts and critical epitaxial growth parameters. Issues important for device modeling and fabrication technologies are discussed. The paper then highlights the performance and the potential impact of HBT devices and integrated circuits in various application areas. Key prospects for future HBT development are also addressed.

Selective Area Epitaxy for Optoelectronic Devices

1993 ◽  
Vol 300 ◽  
Author(s):  
H. Temkin ◽  
R. A. Hamm ◽  
A. Feygenson ◽  
M. A. Cotta ◽  
L. R. Harriott ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
High Performance ◽  
Optoelectronic Devices ◽  
Bipolar Transistors ◽  
Powerful Method ◽  
Selective Area Epitaxy ◽  
Optoelectronic Integrated Circuits ◽  
Selective Area

ABSTRACTWe discuss the characteristics of MOMBE based selective area epitaxy useful in the preparation of optoelectronic devices. Selective area epitaxy, a process in which epitaxy is restricted only to the areas opened in a suitably prepared dielectric mask, offers a powerful method of preparing high performance devices, varying the thickness and composition of the grown layers simply by controlling the width of the open areas and monolithically integrating different device types on common substrates. Lasers, heterostructure bipolar transistors, and optoelectronic integrated circuits based on InGaAs/InP system and relying on selective area epitaxy are described.

scholarly journals Graded-Gap TechnologyFormattingof High-Speed GaAs – TransistorStructuresastheBasisforModern of Large Integrated Circuits

2015 ◽  
Vol 16 (1) ◽  
pp. 221-229
Author(s):  
S.P. Novosyadlyy ◽  
A.M. Bosats'kyy
Keyword(s):  
Integrated Circuits ◽  
Field Effect ◽  
High Speed ◽  
Field Effect Transistors ◽  
Effective Rate ◽  
Bipolar Transistors ◽  
Hot Electron ◽  
Silicon Devices ◽  
Heterostructure Field Effect Transistors ◽  
Gap Technology

Reducing the size of silicon devices is accompanied by an increase in the effective rate of electrons,  decrease transit time and the transition to a ballistic work.Power consumption is reduced too. Formation of large integrated circuits structures onSi-homotransition reduces their frequency range and performance.Nowadaysproposed several new types of devices and technologies forming of large integrated circuits structures that based on high speeds and mobility of electrons in GaAs, and  small size structures.These include, for example, the heterostructure field-effect transistors on a segmented doping, bipolar transistors with wide-emitter, transistor with soulful base, vertical ballistic transistors, devices with flat-doped barriers and hot electron transistors as element base of modern high-speed large integrated circuits.In this article we consider graded-gap technology formatting as bipolar and field-effect transistors, which are the basis of modern high-speedof large integrated circuits structures.

scholarly journals UNIFIED BIPOLAR TRANSISTOR SPICE MODEL TAKING INTO ACCOUNT THE INFLUENCE OF DIFFERENT RADIATION TYPES

2020 ◽  
Author(s):  
Konstantin Petrosyants ◽  
Maksim Kozhukhov
Keyword(s):  
Integrated Circuits ◽  
Radiation Effect ◽  
Bipolar Transistors ◽  
Bipolar Transistor ◽  
Electrical Characteristics ◽  
Spice Simulation ◽  
Sige Hbt ◽  
Spice Model ◽  
Before And After

The unified Si BT/SiGe HBT SPICE-model is presented, which allows performing SPICE simulation of integrated circuits that considering the radiation effect. The results of measurements and modeling of electrical characteristics of bipolar transistors before and after exposure to various radiation types are presented.

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