Selective Area Epitaxy for Optoelectronic Devices

1993 ◽  
Vol 300 ◽  
Author(s):  
H. Temkin ◽  
R. A. Hamm ◽  
A. Feygenson ◽  
M. A. Cotta ◽  
L. R. Harriott ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
High Performance ◽  
Optoelectronic Devices ◽  
Bipolar Transistors ◽  
Powerful Method ◽  
Selective Area Epitaxy ◽  
Optoelectronic Integrated Circuits ◽  
Selective Area

ABSTRACTWe discuss the characteristics of MOMBE based selective area epitaxy useful in the preparation of optoelectronic devices. Selective area epitaxy, a process in which epitaxy is restricted only to the areas opened in a suitably prepared dielectric mask, offers a powerful method of preparing high performance devices, varying the thickness and composition of the grown layers simply by controlling the width of the open areas and monolithically integrating different device types on common substrates. Lasers, heterostructure bipolar transistors, and optoelectronic integrated circuits based on InGaAs/InP system and relying on selective area epitaxy are described.

Monolithic integration of InGaAsp/Inp lasers and heterostructure bipolar transistors by selective area epitaxy

1993 ◽  
Vol 29 (8) ◽  
pp. 645 ◽  
Author(s):  
X. An ◽  
H. Temkin ◽  
A. Feygenson ◽  
R.A. Hamm ◽  
M.A. Cotta ◽  
...  
Keyword(s):  
Bipolar Transistors ◽  
Monolithic Integration ◽  
Selective Area Epitaxy ◽  
Selective Area

III-V HETEROJUNCTION BIPOLAR TRANSISTORS FOR HIGH-SPEED APPLICATIONS

1990 ◽  
Vol 01 (03n04) ◽  
pp. 245-301 ◽  
Author(s):  
M.F. CHANG ◽  
P.M. ASBECK
Keyword(s):  
Integrated Circuits ◽  
Heterojunction Bipolar Transistors ◽  
High Speed ◽  
High Performance ◽  
Growth Parameters ◽  
Bipolar Transistors ◽  
System Requirements ◽  
Potential Impact ◽  
Computational Systems ◽  
Very High

Recent advances in communication, radar and computational systems demand very high performance electronic circuits. Heterojunction bipolar transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic device advantages than competing technologies. This paper reviews the present status of GaAs and InP-based HBT technologies and their applications to digital, analog, microwave and multifunction circuits. It begins with a brief review of HBT device concepts and critical epitaxial growth parameters. Issues important for device modeling and fabrication technologies are discussed. The paper then highlights the performance and the potential impact of HBT devices and integrated circuits in various application areas. Key prospects for future HBT development are also addressed.

Implant-induced strain-relaxation in SiGe/Si layers

1993 ◽  
Vol 51 ◽  
pp. 1112-1113
Author(s):  
N. David Theodore ◽  
Gordon Tam
Keyword(s):  
Integrated Circuits ◽  
Heterojunction Bipolar Transistors ◽  
High Speed ◽  
High Performance ◽  
Strain Relaxation ◽  
Base Material ◽  
Sige Layer ◽  
Bipolar Transistors ◽  
Leakage Currents ◽  
Extrinsic Base

SiGe is being extensively investigated for use in heterojunction bipolar-transistors (HBT) and high-speed integrated circuits. SiGe is typically used as an epitaxial base material in HBTs. To obtain extremely high-performance bipolar-transistors it is necessary to reduce the extrinsic base-resistance. This can be done by increasing the base-doping or by widening the base link-region by ion implantation. A problem that arises however with the use of implantation is that blanket implants have been found to enhance strain-relaxation of SiGe/Si. Strain relaxation will cause the bandgap-difference between Si and SiGe to decrease; this difference is maximum for a strained SiGe layer. The electrical benefits of using SiGe/Si arise largely from the presence of a significant bandgap-difference across the SiGe/Si interface. Strain relaxation reduces this benefit. Furthermore, once misfit or threading dislocations result (during strain-relaxation), the defects can give rise to recombination-generation in depletion regions of the device; high electrical leakage currents result.

Selective Area Epitaxy of GaAs Optical Waveguides by Laser Assisted Chemical Vapor Deposition

1995 ◽  
Vol 397 ◽  
Author(s):  
J.C. Roberts ◽  
K.S. Boutros ◽  
S.M. Bedair
Keyword(s):  
Chemical Vapor Deposition ◽  
Integrated Circuits ◽  
Cross Sections ◽  
Vapor Deposition ◽  
Optical Waveguides ◽  
Chemical Vapor ◽  
Direct Writing ◽  
Selective Area Epitaxy ◽  
Selective Area ◽  
Multimode Waveguides

ABSTRACTDirect writing of GaAs optical waveguides has been achieved by laser assisted chemical vapor deposition (LCVD). The multimode waveguides have gaussian-like cross sections, smooth surfaces, and exhibit losses as low as 5.4 dB/cm. The LCVD technique offers the capability of maskless in situ selective epitaxial growth of diverse multilayer structures, and is therefore a novel alternative for the monolithic integration of optoelectronic integrated circuits.

A new approach for the integration of optoelectronic devices using laser selective area epitaxy

1991 ◽  
Vol 107 (1-4) ◽  
pp. 878-882 ◽  
Author(s):  
H. Liu ◽  
J.C. Roberts ◽  
J. Ramdani ◽  
S.M. Bedair ◽  
J. Farari ◽  
...  
Keyword(s):  
Optoelectronic Devices ◽  
Selective Area Epitaxy ◽  
New Approach ◽  
Selective Area

scholarly journals Surface Nanostructuring during Selective Area Epitaxy of Heterostructures with InGaAs QWs in the Ultra-Wide Windows

Nanomaterials ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 11
Author(s):  
Viktor Shamakhov ◽  
Dmitriy Nikolaev ◽  
Sergey Slipchenko ◽  
Evgenii Fomin ◽  
Alexander Smirnov ◽  
...  
Keyword(s):  
Growth Rate ◽  
Integrated Circuits ◽  
Quantum Wells ◽  
Chemical Vapour ◽  
Growth Conditions ◽  
Local Change ◽  
Selective Area Epitaxy ◽  
Mocvd Growth ◽  
Selective Area ◽  
Sio2 Mask

Selective area epitaxy (SAE) is widely used in photonic integrated circuits, but there is little information on the use of this technique for the growth of heterostructures in ultra-wide windows. Samples of heterostructures with InGaAs quantum wells (QWs) on GaAs (100) substrates with a pattern of alternating stripes (100-μm-wide SiO2 mask/100-μm-wide window) were grown using metalorganic chemical vapour deposition (MOCVD). It was found that due to a local change in the growth rate of InGaAs QW in the window, the photoluminescence (PL) spectra measured from the edge to the center of the window exhibited maximum blueshifts of 14 and 19 meV at temperatures of 80 K and 300 K, respectively. Using atomic force microscopy, we have demonstrated that the surface morphologies of structures grown using standard epitaxy or SAE under identical MOCVD growth conditions correspond to a step flow growth with a step height of ~1.5 ML or a step bunching growth mode, respectively. In the structures grown with the use of SAE, a strong variation in the surface morphology in an ultra-wide window from its center to the edge was revealed, which is explained by a change in the local misorientation of the layer due to a local change in the growth rate over the width of the window.

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