Nonvolatile semiconductor memory devices

J.J. Chang

doi:10.1109/proc.1976.10272

Nonvolatile semiconductor memory devices

Proceedings of the IEEE ◽

10.1109/proc.1976.10272 ◽

1976 ◽

Vol 64 (7) ◽

pp. 1039-1059 ◽

Cited By ~ 68

Author(s):

J.J. Chang

Keyword(s):

Memory Devices ◽

Semiconductor Memory ◽

Nonvolatile Semiconductor Memory

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Endurance and Data Retention Improvement of Silicon–Oxide–Nitride–Oxide–Silicon Nonvolatile Semiconductor Memory Devices with Partially Bottom-Silicon-Rich Nitride Structure

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.6380 ◽

2005 ◽

Vol 44 (9A) ◽

pp. 6380-6384 ◽

Cited By ~ 3

Author(s):

Hua-Ching Chien ◽

Kuo-Hong Wu ◽

Jui-Wen Chang ◽

Chin-Hsing Kao ◽

Tung-Sheng Chen

Keyword(s):

Silicon Oxide ◽

Memory Devices ◽

Data Retention ◽

Semiconductor Memory ◽

Nonvolatile Semiconductor Memory ◽

Nitride Oxide

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Application of plasma enhanced chemical vapor deposition silicon oxynitride layers in nonvolatile semiconductor memory devices

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3054353 ◽

2009 ◽

Vol 27 (1) ◽

pp. 494 ◽

Cited By ~ 10

Author(s):

Robert Mroczyński ◽

Romuald B. Beck

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Silicon Oxynitride ◽

Memory Devices ◽

Semiconductor Memory ◽

Nonvolatile Semiconductor Memory

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Reactive magnetron sputtered hafnium oxide layers for nonvolatile semiconductor memory devices

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.4906090 ◽

2015 ◽

Vol 33 (1) ◽

pp. 01A113 ◽

Cited By ~ 5

Author(s):

Robert Mroczyński ◽

Magdalena Szymańska ◽

Wojciech Głuszewski

Keyword(s):

Hafnium Oxide ◽

Memory Devices ◽

Reactive Magnetron ◽

Semiconductor Memory ◽

Oxide Layers ◽

Nonvolatile Semiconductor Memory

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Basics of Nonvolatile Semiconductor Memory Devices

Nonvolatile Semiconductor Memory Technology ◽

10.1109/9780470545409.ch1 ◽

2009 ◽

Keyword(s):

Memory Devices ◽

Semiconductor Memory ◽

Nonvolatile Semiconductor Memory

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Characterization of SONOS oxynitride nonvolatile semiconductor memory devices

Solid-State Electronics ◽

10.1016/s0038-1101(02)00448-3 ◽

2003 ◽

Vol 47 (5) ◽

pp. 885-891 ◽

Cited By ~ 63

Author(s):

Stephen J. Wrazien ◽

Yijie Zhao ◽

Joel D. Krayer ◽

Marvin H. White

Keyword(s):

Memory Devices ◽

Semiconductor Memory ◽

Nonvolatile Semiconductor Memory

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Charge retention in scaled SONOS nonvolatile semiconductor memory devices—Modeling and characterization

Solid-State Electronics ◽

10.1016/0038-1101(93)90049-v ◽

1993 ◽

Vol 36 (10) ◽

pp. 1401-1416 ◽

Cited By ~ 38

Author(s):

Yin Hu ◽

Marvin H. White

Keyword(s):

Memory Devices ◽

Charge Retention ◽

Semiconductor Memory ◽

Nonvolatile Semiconductor Memory

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Characterizing damage to thin oxides induced during programming floating trap non-volatile semiconductor memory devices

International Semiconductor Device Research Symposium, 2003 ◽

10.1109/isdrs.2003.1272083 ◽

2004 ◽

Author(s):

S.J. Wrazien ◽

Yu Wang ◽

B.M. Khan ◽

M.H. White

Keyword(s):

Memory Devices ◽

Semiconductor Memory

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Characterization of scaled MANOS nonvolatile semiconductor memory (NVSM) devices

2007 International Semiconductor Device Research Symposium ◽

10.1109/isdrs.2007.4422527 ◽

2007 ◽

Author(s):

Gan Wang ◽

Nathan Eichenlaub ◽

Yanli Zhang ◽

Marvin H. White

Keyword(s):

Semiconductor Memory ◽

Nonvolatile Semiconductor Memory

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Noise immunity characteristics of semiconductor memory devices-a comparison of UV-EPROM with static RAM

1999 IEEE International Symposium on Electromagnetic Compatability. Symposium Record (Cat. No.99CH36261) ◽

10.1109/isemc.1999.812885 ◽

2003 ◽

Author(s):

A. Mutoh ◽

S. Nitta

Keyword(s):

Noise Immunity ◽

Memory Devices ◽

Semiconductor Memory ◽

Static Ram

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