On the rate of growth and decay of high-field domains in n-type gallium arsenide

1971 ◽  
Vol 59 (4) ◽  
pp. 718-719 ◽  
Author(s):  
S. Guha
Keyword(s):  
Gallium Arsenide ◽  
High Field ◽  
Rate Of Growth

Formation of Barrier Oxide Film on Lead in Borate Solutions

1994 ◽  
Vol 59 (6) ◽  
pp. 1305-1310 ◽  
Author(s):  
Emad E. Abdel Aal ◽  
Mohamed M. Hefny
Keyword(s):  
Oxide Film ◽  
Current Density ◽  
High Field ◽  
Empirical Relation ◽  
Field Approximation ◽  
Ion Concentration ◽  
Solution Temperature ◽  
Oxide Growth ◽  
Rate Of Growth ◽  
Barrier Type

Galvanostatic anodization of lead in borate solutions reveals that lead can form a barrier type oxide film. The rate of growth, R, fulfils the empirical relation, R = aib within the current density i range from 1.16 .10-4 to 3.19 .10-4 A cm-2. The magnitudes of the parameters a and b are 6.9 . 103 and 1.6, respectively, it has been found that the high field approximation is applicable for the oxide growth on lead. The coefficients of the dependence of R on solution temperature, T, pH and borate ion concentration, c, viz. (∂R/∂T), (∂R/∂pH) and (∂R/∂log c) are -18 . 10-4, -0.13 and 0.41, respectively.

High Field Microscopy Studies of Gallium Arsenide-Metal Interface

1986 ◽  
Vol 76 ◽  
Author(s):  
Chand Patel
Keyword(s):  
Gallium Arsenide ◽  
Sample Preparation ◽  
Field Emission ◽  
Experimental Work ◽  
High Field ◽  
Room Temperature ◽  
Low Doses ◽  
Metal Interface ◽  
Potential Barriers ◽  
Practical Nature

ABSTRACTThe Field Emission Microscope has been extensively used in the study of metal and semiconductor surfaces. The process of Field Emission is, itself, of great interest and a considerable amount of both theoretical and experimental work has been carried out in this field. The Field Emission Microscope also yields useful information of a more practical nature, such as the nature of bulk and surface impurity, diffusion, chemisorption and surface potential barriers. It is essential that the surface to be studieg can be prepared in the form of a high curvature tip, with a radius of 10−5cm and can be cleaned sufficiently well for a symmetrical reproducible pattern to be observed.Field Emission technique has been applied to study the behaviour of thin overlayers of gold on GaAs. Using Fowler-Nordheim plots, change in the work function φ, is examined for temperatures, T=77K and T=300K. φ changes slightly for low doses of gold and significantly for larger ones {φ=4.3 − 3.7 eV}. Desorption of gold is also examined and the results indicate two different adsorbed states in Au-overlayers formed at room temperature. Finally, a brief description of sample preparation is also included.

The mechanism and device applications of high field instabilities in gallium arsenide

1965 ◽  
Vol 30 (6) ◽  
pp. 377 ◽  
Author(s):  
J.S. Heeks ◽  
A.D. Woode ◽  
C.P. Sandbank
Keyword(s):  
Gallium Arsenide ◽  
High Field ◽  
Device Applications

High-field conductivity characteristics of n-type gallium arsenide

1972 ◽  
Vol 49 (1) ◽  
pp. K41-K45 ◽  
Author(s):  
D. Mukhopadhyay ◽  
B. R. Nag
Keyword(s):  
Gallium Arsenide ◽  
High Field

Study of segregation in La1.8Sr0.2CuO4 superconductor by STEM-EDS microanalysis

1987 ◽  
Vol 45 ◽  
pp. 54-55
Author(s):  
T. F. Kelly ◽  
P. J. Lee ◽  
E. E. Hellstrom ◽  
D. C. Larbalestier
Keyword(s):  
Rare Earth ◽  
High Field ◽  
Transport Current ◽  
Total Thickness ◽  
New Class ◽  
Ceramic Superconductors ◽  
Current Densities ◽  
Group Ii ◽  
Eds Microanalysis

Recently there has been much excitement over a new class of high Tc (>30 K) ceramic superconductors of the form A1-xBxCuO4-x, where A is a rare earth and B is from Group II. Unfortunately these materials have only been able to support small transport current densities 1-10 A/cm2. It is very desirable to increase these values by 2 to 3 orders of magnitude for useful high field applications. The reason for these small transport currents is as yet unknown. Evidence has, however, been presented for superconducting clusters on a 50-100 nm scale and on a 1-3 μm scale. We therefore planned a detailed TEM and STEM microanalysis study in order to see whether any evidence for the clusters could be seen.A La1.8Sr0.2Cu04 pellet was cut into 1 mm thick slices from which 3 mm discs were cut. The discs were subsequently mechanically ground to 100 μm total thickness and dimpled to 20 μm thickness at the center.

High-field magnetoluminescence of ZnSe quantum wires

1998 ◽  
Vol 184-185 (1-2) ◽  
pp. 339-342 ◽  
Author(s):  
L Parthier
Keyword(s):  
High Field ◽  
Quantum Wires
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