The mechanism and device applications of high field instabilities in gallium arsenide

1965 ◽  
Vol 30 (6) ◽  
pp. 377 ◽  
Author(s):  
J.S. Heeks ◽  
A.D. Woode ◽  
C.P. Sandbank
Keyword(s):  
Gallium Arsenide ◽  
High Field ◽  
Device Applications

High Field Microscopy Studies of Gallium Arsenide-Metal Interface

1986 ◽  
Vol 76 ◽  
Author(s):  
Chand Patel
Keyword(s):  
Gallium Arsenide ◽  
Sample Preparation ◽  
Field Emission ◽  
Experimental Work ◽  
High Field ◽  
Room Temperature ◽  
Low Doses ◽  
Metal Interface ◽  
Potential Barriers ◽  
Practical Nature

ABSTRACTThe Field Emission Microscope has been extensively used in the study of metal and semiconductor surfaces. The process of Field Emission is, itself, of great interest and a considerable amount of both theoretical and experimental work has been carried out in this field. The Field Emission Microscope also yields useful information of a more practical nature, such as the nature of bulk and surface impurity, diffusion, chemisorption and surface potential barriers. It is essential that the surface to be studieg can be prepared in the form of a high curvature tip, with a radius of 10−5cm and can be cleaned sufficiently well for a symmetrical reproducible pattern to be observed.Field Emission technique has been applied to study the behaviour of thin overlayers of gold on GaAs. Using Fowler-Nordheim plots, change in the work function φ, is examined for temperatures, T=77K and T=300K. φ changes slightly for low doses of gold and significantly for larger ones {φ=4.3 − 3.7 eV}. Desorption of gold is also examined and the results indicate two different adsorbed states in Au-overlayers formed at room temperature. Finally, a brief description of sample preparation is also included.

High-field conductivity characteristics of n-type gallium arsenide

1972 ◽  
Vol 49 (1) ◽  
pp. K41-K45 ◽  
Author(s):  
D. Mukhopadhyay ◽  
B. R. Nag
Keyword(s):  
Gallium Arsenide ◽  
High Field

Gallium arsenide (device applications)

1989 ◽  
Vol 8 (3) ◽  
pp. 23-25 ◽  
Author(s):  
A.K. Srivastava
Keyword(s):  
Gallium Arsenide ◽  
Device Applications

TEM and cathodoluminescence of precipitates in II-VI semiconductors

1988 ◽  
Vol 46 ◽  
pp. 488-489
Author(s):  
Joanna L. Batstone
Keyword(s):  
Crystal Growth ◽  
Band Gap ◽  
Local Strain ◽  
Wide Band ◽  
Optoelectronic Device ◽  
Wide Band Gap ◽  
Bulk Crystal Growth ◽  
Transmission Electron ◽  
Device Applications ◽  
Stoichiometry Control

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.

Sign in / Sign up

Export Citation Format

Share Document