Recombination Processes following Impact Ionization by High‐Field Domains in Gallium Arsenide

1967 ◽  
Vol 38 (12) ◽  
pp. 4589-4595 ◽  
Author(s):  
P. D. Southgate
Keyword(s):  
Gallium Arsenide ◽  
High Field ◽  
Impact Ionization ◽  
Recombination Processes

Analysis of recombination processes in polytype gallium arsenide nanowires

Nano Energy ◽  
2019 ◽  
Vol 56 ◽  
pp. 196-206 ◽  
Author(s):  
Natasa Vulic ◽  
Stephen M. Goodnick
Keyword(s):  
Gallium Arsenide ◽  
Recombination Processes

Theory of high field carrier transport and impact ionization in ZnO

2010 ◽  
Author(s):  
Francesco Bertazzi ◽  
Michele Penna ◽  
Michele Goano ◽  
Enrico Bellotti
Keyword(s):  
High Field ◽  
Carrier Transport ◽  
Impact Ionization

scholarly journals Electrothermal transport induced material reconfiguration and performance degradation of CVD-grown monolayer MoS2 transistors

2020 ◽  
Vol 4 (1) ◽  
Author(s):  
Ansh ◽  
Jeevesh Kumar ◽  
Gaurav Sheoran ◽  
Mayank Shrivastava
Keyword(s):  
Low Temperature ◽  
High Field ◽  
Impact Ionization ◽  
Operating Regime ◽  
Kelvin Probe ◽  
Current Decay ◽  
Electrical Stress ◽  
Field Operation ◽  
Gate Control ◽  
And Performance

Abstract Device and material reliability of 2-dimensional materials, especially CVD-grown MoS2, has remained un-addressed since 2011 when the first TMDC transistor was reported. For its potential application in next generation electronics, it is imperative to update our understanding of mechanisms through which MoS2 transistors’ performance degrades under long-term electrical stress. We report, for CVD-grown monolayer MoS2, results on temporal degradation of material and device performance under electrical stress. Both low and high field regimes of operation are explored at different temperatures, gate bias and stress cycles. During low field operation, current is found to saturate after hundreds of seconds of operation with the current decay time constant being a function of temperature and stress cycle. High field operation, especially at low temperature, leads to impact ionization assisted material and device degradation. It is found that high field operation at low temperature results in amorphization of the channel and is verified by device and kelvin probe force microscopy (KPFM) analyses. In general, a prolonged room temperature operation of CVD-grown MoS2 transistors lead to degraded gate control, higher OFF state current and negative shift in threshold voltage (VT). This is further verified, through micro-Raman and photoluminescence spectroscopy, which suggest that a steady state DC electrical stress leads to the formation of localized low resistance regions in the channel and a subsequent loss of transistor characteristics. Our findings unveil unique mechanism by which CVD MoS2 undergoes material degradation under electrical stress and subsequent breakdown of transistor behavior. Such an understanding of material and device reliability helps in determining the safe operating regime from device as well as circuit perspective.

Excitonic Mechanism of Rare Earth Excitation in II-VI and IH-V Semiconductors

1992 ◽  
Vol 262 ◽  
Author(s):  
Marek Godlewski
Keyword(s):  
Rare Earth ◽  
High Field ◽  
Impact Ionization ◽  
Excitation Mechanism ◽  
Carrier Trapping ◽  
Rare Earth Doped ◽  
Rare Earth Impurities ◽  
Excitonic Mechanism

ABSTRACTIn this paper we analyze processes which may improve the efficiency of low- and high- field electroluminescence devices based on rare earth doped II-VI and III-V semiconductors. The main topicsare the processes which follow impact ionization, i.e., carrier trapping and/or exciton binding. Excitonic excitation mechanism is shown to occur also for ions which are not directly ionized, as observed recently for some rare earth impurities in II-VI and III-V semiconductors.

High Field Microscopy Studies of Gallium Arsenide-Metal Interface

1986 ◽  
Vol 76 ◽  
Author(s):  
Chand Patel
Keyword(s):  
Gallium Arsenide ◽  
Sample Preparation ◽  
Field Emission ◽  
Experimental Work ◽  
High Field ◽  
Room Temperature ◽  
Low Doses ◽  
Metal Interface ◽  
Potential Barriers ◽  
Practical Nature

ABSTRACTThe Field Emission Microscope has been extensively used in the study of metal and semiconductor surfaces. The process of Field Emission is, itself, of great interest and a considerable amount of both theoretical and experimental work has been carried out in this field. The Field Emission Microscope also yields useful information of a more practical nature, such as the nature of bulk and surface impurity, diffusion, chemisorption and surface potential barriers. It is essential that the surface to be studieg can be prepared in the form of a high curvature tip, with a radius of 10−5cm and can be cleaned sufficiently well for a symmetrical reproducible pattern to be observed.Field Emission technique has been applied to study the behaviour of thin overlayers of gold on GaAs. Using Fowler-Nordheim plots, change in the work function φ, is examined for temperatures, T=77K and T=300K. φ changes slightly for low doses of gold and significantly for larger ones {φ=4.3 − 3.7 eV}. Desorption of gold is also examined and the results indicate two different adsorbed states in Au-overlayers formed at room temperature. Finally, a brief description of sample preparation is also included.

Impact ionization in bulk GaAs high field domain

1972 ◽  
Vol 19 (1) ◽  
pp. 14-21 ◽  
Author(s):  
P.P. Bohn ◽  
G.J. Herskowitz
Keyword(s):  
High Field ◽  
Impact Ionization ◽  
Bulk Gaas
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