Correction to "The cutoff frequency of a varactor diode with variable series resistance"

1966 ◽  
Vol 54 (10) ◽  
pp. 1465-1465
Author(s):  
A.I. Grayzel
Keyword(s):  
Series Resistance ◽  
Cutoff Frequency ◽  
Varactor Diode

Varactor diode series resistance†

1973 ◽  
Vol 34 (1) ◽  
pp. 97-109 ◽  
Author(s):  
S. H. AL-CHARCHAFCHI ◽  
F. J. HYDE
Keyword(s):  
Series Resistance ◽  
Varactor Diode

scholarly journals THE SERIES RESISTANCE AND CUTOFF FREQUENCY OF DIFFUSED PARAMETRIC DIODE

1964 ◽  
Vol 20 (4) ◽  
pp. 327
Author(s):  
SHIUH GEN-TWEN ◽  
CHUO CHI-TSANG
Keyword(s):  
Series Resistance ◽  
Cutoff Frequency

A novel millimetre-wave gallium arsenide beam-lead mixer diode with cutoff frequency > 2 THz

1991 ◽  
Vol 69 (3-4) ◽  
pp. 180-184 ◽  
Author(s):  
Hsien-Ching Huang ◽  
Arvind Swarup ◽  
Richard Henderson
Keyword(s):  
Figure Of Merit ◽  
Series Resistance ◽  
Cutoff Frequency ◽  
Polyimide Film ◽  
Parasitic Capacitance ◽  
Zero Bias ◽  
Millimetre Wave ◽  
Novel Structure ◽  
Production Techniques ◽  
Beam Lead

A low-parasitic-capacitance beam-lead Schottky diode has been developed for millimetre-wavelength mixer applications from 30–110 GHz. It has a novel structure that incorporates a polyimide film to support the beam leads and the GaAs active area. Typical devices have an ideality factor of 1.12, a parasitic capacitance of 10 fF, a zero-bias-junction capacitance of 20 fF, a series resistance of 2.5 Ω, and hence a figure of merit cutoff frequency of over 3 THz. Diodes tested in production mixers at 36 GHz have yielded a conversion loss of 5.14 dB. The devices, fabricated by repeatable production techniques, are mechanically rugged and suitable for qualification to space and defence standards.

scholarly journals THE SERIES RESISTANCE AND CUTOFF FREQUENCY OF DOUBLE DIFFUSED PARAMETRIC DIODE

1964 ◽  
Vol 20 (6) ◽  
pp. 540
Author(s):  
SHIUH GEN-TWEN ◽  
CHUO CHI-TSANG
Keyword(s):  
Series Resistance ◽  
Cutoff Frequency

Behavior of contact-silicided TFSOI gate structures

1994 ◽  
Vol 52 ◽  
pp. 860-861
Author(s):  
N. David Theodore ◽  
Juergen Foerstner ◽  
Peter Fejes
Keyword(s):  
Semiconductor Device ◽  
Series Resistance ◽  
Field Effect Transistors ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
Continuous Layer ◽  
Buried Oxide ◽  
Device Structures ◽  
Thin Silicon

As semiconductor device dimensions shrink and packing-densities rise, issues of parasitic capacitance and circuit speed become increasingly important. The use of thin-film silicon-on-insulator (TFSOI) substrates for device fabrication is being explored in order to increase switching speeds. One version of TFSOI being explored for device fabrication is SIMOX (Silicon-separation by Implanted OXygen).A buried oxide layer is created by highdose oxygen implantation into silicon wafers followed by annealing to cause coalescence of oxide regions into a continuous layer. A thin silicon layer remains above the buried oxide (~220 nm Si after additional thinning). Device structures can now be fabricated upon this thin silicon layer.Current fabrication of metal-oxidesemiconductor field-effect transistors (MOSFETs) requires formation of a polysilicon/oxide gate between source and drain regions. Contact to the source/drain and gate regions is typically made by use of TiSi2 layers followedby Al(Cu) metal lines. TiSi2 has a relatively low contact resistance and reduces the series resistance of both source/drain as well as gate regions

Trombone Transfer Functions: Comparison Between Frequency-Swept Sine Wave and Human Performer Input

2012 ◽  
Vol 37 (4) ◽  
pp. 447-454
Author(s):  
James W. Beauchamp
Keyword(s):  
Transfer Function ◽  
Transfer Functions ◽  
Cutoff Frequency ◽  
Sine Wave ◽  
Nonlinear Propagation ◽  
Linear Filter ◽  
Wave System ◽  
General Effect ◽  
Filter Characteristic ◽  
High Pass

Abstract Source/filter models have frequently been used to model sound production of the vocal apparatus and musical instruments. Beginning in 1968, in an effort to measure the transfer function (i.e., transmission response or filter characteristic) of a trombone while being played by expert musicians, sound pressure signals from the mouthpiece and the trombone bell output were recorded in an anechoic room and then subjected to harmonic spectrum analysis. Output/input ratios of the signals’ harmonic amplitudes plotted vs. harmonic frequency then became points on the trombone’s transfer function. The first such recordings were made on analog 1/4 inch stereo magnetic tape. In 2000 digital recordings of trombone mouthpiece and anechoic output signals were made that provide a more accurate measurement of the trombone filter characteristic. Results show that the filter is a high-pass type with a cutoff frequency around 1000 Hz. Whereas the characteristic below cutoff is quite stable, above cutoff it is extremely variable, depending on level. In addition, measurements made using a swept-sine-wave system in 1972 verified the high-pass behavior, but they also showed a series of resonances whose minima correspond to the harmonic frequencies which occur under performance conditions. For frequencies below cutoff the two types of measurements corresponded well, but above cutoff there was a considerable difference. The general effect is that output harmonics above cutoff are greater than would be expected from linear filter theory, and this effect becomes stronger as input pressure increases. In the 1990s and early 2000s this nonlinear effect was verified by theory and measurements which showed that nonlinear propagation takes place in the trombone, causing a wave steepening effect at high amplitudes, thus increasing the relative strengths of the upper harmonics.

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