A novel millimetre-wave gallium arsenide beam-lead mixer diode with cutoff frequency > 2 THz

1991 ◽  
Vol 69 (3-4) ◽  
pp. 180-184 ◽  
Author(s):  
Hsien-Ching Huang ◽  
Arvind Swarup ◽  
Richard Henderson
Keyword(s):  
Figure Of Merit ◽  
Series Resistance ◽  
Cutoff Frequency ◽  
Polyimide Film ◽  
Parasitic Capacitance ◽  
Zero Bias ◽  
Millimetre Wave ◽  
Novel Structure ◽  
Production Techniques ◽  
Beam Lead

A low-parasitic-capacitance beam-lead Schottky diode has been developed for millimetre-wavelength mixer applications from 30–110 GHz. It has a novel structure that incorporates a polyimide film to support the beam leads and the GaAs active area. Typical devices have an ideality factor of 1.12, a parasitic capacitance of 10 fF, a zero-bias-junction capacitance of 20 fF, a series resistance of 2.5 Ω, and hence a figure of merit cutoff frequency of over 3 THz. Diodes tested in production mixers at 36 GHz have yielded a conversion loss of 5.14 dB. The devices, fabricated by repeatable production techniques, are mechanically rugged and suitable for qualification to space and defence standards.

Analysis of current–voltage and capacitance–voltage characteristics of Zr/p-Si Schottky diode with high series resistance

2020 ◽  
Vol 34 (10) ◽  
pp. 2050095
Author(s):  
Durmuş Ali Aldemir
Keyword(s):  
Barrier Height ◽  
Schottky Diode ◽  
Ideality Factor ◽  
Series Resistance ◽  
Zero Bias ◽  
Acceptor Concentration ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
High Series ◽  
Contact Parameters

Zr/p-Si Schottky diode was fabricated by DC magnetic sputtering of Zr on p-Si. Zr rectifying contact gave a zero bias barrier height of 0.73 eV and an ideality factor of 1.33 by current–voltage measurement. The experimental zero bias barrier height was higher than the value predicted by metal-induced gap states (MIGSs) and electronegativity theory. The forward bias current was limited by high series resistance. The series resistance value of 9840 [Formula: see text] was determined from Cheung functions. High value of the series resistance was ascribed to low quality ohmic contact. In addition to Cheung functions, important contact parameters such as barrier height and series resistance were calculated by using modified Norde method. Re-evaluation of modified Norde functions was realized in the direction of the method proposed by Lien et al. [IEEE Trans. Electron Devices 31 (1984) 1502]. From the method, the series resistance and ideality factor values were found to be as 41.49 [Formula: see text] and 2.08, respectively. The capacitance–voltage characteristics of the diode were measured as a function of frequency. For a wide range of applied frequency, the contact parameters calculated from [Formula: see text]–[Formula: see text] curves did not exhibit frequency dependence. The barrier height value of 0.71 eV which was in close agreement with the value of zero bias barrier height was calculated from [Formula: see text]–[Formula: see text] plot at 1 MHz. The values of acceptor concentration obtained from [Formula: see text]–[Formula: see text] curves showed consistency with actual acceptor concentration of p-Si.

scholarly journals THE SERIES RESISTANCE AND CUTOFF FREQUENCY OF DIFFUSED PARAMETRIC DIODE

1964 ◽  
Vol 20 (4) ◽  
pp. 327
Author(s):  
SHIUH GEN-TWEN ◽  
CHUO CHI-TSANG
Keyword(s):  
Series Resistance ◽  
Cutoff Frequency

Zero-bias edge-coupled InGaAs photodiodes in millimetre-wave radio-fibre systems

1993 ◽  
Vol 29 (21) ◽  
pp. 1879 ◽  
Author(s):  
D. Wake ◽  
N.G. Walker ◽  
I.C. Smith
Keyword(s):  
Zero Bias ◽  
Millimetre Wave ◽  
Wave Radio

Simulation of an AlGaN/GaN HEMT for Ka-Band

2013 ◽  
Vol 748 ◽  
pp. 864-867
Author(s):  
Xiao Bin Luo ◽  
Wei Hua Yu ◽  
De Chun Guo ◽  
Zhi Ming Wang
Keyword(s):  
High Frequency ◽  
Cutoff Frequency ◽  
Drain Current ◽  
Current Gain ◽  
Drain Voltage ◽  
Zero Bias ◽  
Ka Band ◽  
Material Parameters ◽  
Gan Hemt ◽  
Lateral Structure

A physical model of 0.24μm gate-length and 50μm gate-width AlGaN/GaN HEMTs is designed in the paper including lateral structure and longitudinal material parameters. Then DC and high frequency characteristics are both simulated and analyzed. The results show that the saturation drain current is 0.8A/mm at zero bias and the maximum transconductance is 350mS/mm. The current gain cutoff frequency (fT) and maximum frequency of oscillation (fmax) are 35GHz and 107GHz respectively at -2V gate voltage and 25V drain voltage. The maximum available power gains (MAG) is 10.2dB at 40GHz. Therefore, the structure can be applied to Ka-band.

scholarly journals On the electrical characteristics of Al/p-Si diodes with and without (PVP: Sn-TeO2) interlayer using current–voltage (I–V) measurements

2020 ◽  
Vol 126 (12) ◽  
Author(s):  
Abbas Sabahi Namini ◽  
Mehdi Shahedi Asl ◽  
Gholamreza Pirgholi-Givi ◽  
Seyed Ali Delbari ◽  
Javid Farazin ◽  
...  
Keyword(s):  
Series Resistance ◽  
Thermionic Emission ◽  
Reverse Current ◽  
Current Transport ◽  
Electrical Characteristics ◽  
Transport Mechanisms ◽  
Electrical Parameters ◽  
Zero Bias ◽  
Current Voltage ◽  
Significant Increment

AbstractThe present study aims to investigate the effect of (PVP: Sn-TeO2) interfacial layer on the electrical parameters of the Al/p-Si diode. For this aim, (Sn-TeO2) nanostructures were developed by the ultrasound-assisted method, and both their electrical and optical characteristics were investigated by XRD, SEM, EDS, and UV–Vis methods. The bandgap of Sn-TeO2 was found as 4.65 eV from the (αhυ)2 vs (hυ) plot. The main electrical parameters of the Al/p-Si diodes with/ without (PVP: Sn-TeO2) interlayer, such as ideality factor (n), zero-bias barrier height (Φ0), and series resistance (Rs), were calculated by applying and comparing two methods of thermionic emission theory and Cheung’s functions. These results show that the presence of the (PVP: Sn-TeO2 interlayer, along with the increase of Φ0, and the decrease of n and Rs, led to a significant increment in the rectification of MPS when compared to MS diode. The current-transport mechanisms (CTMs) of them were examined through the forward LnIF − LnVF and reverse LnIR − VR0.5 bias currents, and then, the Poole–Frenkel and Schottky field-lowering coefficients (β) were calculated and obtained its value from the theoretical and experimental methods showed that the mechanism of the reverse current of MS and MPS diodes is governing by the Schottky emission and Pool-Frenkel mechanism, respectively.

Abnormal Rectifying Characteristics of a Mg Doped GaN Schottky Diode

2003 ◽  
Vol 764 ◽  
Author(s):  
Jae Wook Kim ◽  
Byung Kyu Cho ◽  
Jhang Woo Lee ◽  
Phil W. Yu
Keyword(s):  
Low Temperature ◽  
Series Resistance ◽  
Deep Level ◽  
Sample Surface ◽  
Current Level ◽  
Doping Profile ◽  
Acceptor State ◽  
Equivalent Circuit Analysis ◽  
Zero Bias ◽  
Temperature Range

AbstractElectrical properties of Ti/Al Schottky junctions formed on p-GaN layers are investigated using Hall, I-V and C-V measurements in the temperature range of 82∼500K. All data exhibit extremely strong low temperature carrier freeze out effects, assured by huge decreases of the Hall concentration, zero-bias capacitance and also diode current level as the temperature decreases below ∼150K. The dramatic decrease of current level at the low temperature range indicates that tunneling plays a more important role for the low temperature conduction and the junction shows ohmic-like I-V characteristics due to large series resistance. The barrier height estimated with the thermionic model varies with a strong temperature dependency from 1.21eV at 500K to 0.24eV at 82K. High frequency equivalent circuit analysis indicates that the corrected capacitance still shows a strong frequency dependency even after compensating the series resistance effect due to the slow response of Mg acceptor state. The transition frequency of the acceptor state, which is proportional to the emission rate of the deep level, is estimated to be 142KHz at room temperature. Low frequency C-V measurements provide a proper doping profile, revealing the ∼15nm thin layer with a high doping spike of ∼8×1018/cm3 near the sample surface and the constantly doped bulk layer with a doping level of ∼1017/cm3.

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