Dependence of varactor cutoff frequency on extrinsic series resistance and bias voltage

1966 ◽  
Vol 54 (1) ◽  
pp. 54-55 ◽  
Author(s):  
G.D. Vendelin
Keyword(s):  
Bias Voltage ◽  
Series Resistance ◽  
Cutoff Frequency

scholarly journals THE SERIES RESISTANCE AND CUTOFF FREQUENCY OF DIFFUSED PARAMETRIC DIODE

1964 ◽  
Vol 20 (4) ◽  
pp. 327
Author(s):  
SHIUH GEN-TWEN ◽  
CHUO CHI-TSANG
Keyword(s):  
Series Resistance ◽  
Cutoff Frequency

Conductance and Capacitance Responses of Metal-Organic-Metal Structure Based Organic Semiconductor Thin Film

2017 ◽  
Vol 268 ◽  
pp. 264-268
Author(s):  
Hoh Hang Tak ◽  
Khairul Anuar Mohamad ◽  
Bablu Kumar Ghosh ◽  
Afishah Alias ◽  
Ismail Saad
Keyword(s):  
Thin Film ◽  
Bias Voltage ◽  
Voltage Dependence ◽  
Series Resistance ◽  
Low Frequency ◽  
Metal Structure ◽  
High Frequencies ◽  
Voltage Dependent ◽  
Metal Organic ◽  
Lcr Meter

In this work we have investigated the frequency and the bias voltage dependence of the electrical responses of organic structures based on poly (triarylamine) (PTAA) thin film using ITO/Organic/Al diode structure. The frequency-dependent and bias voltage-dependent conductance and capacitance were investigated using a precision LCR meter with wide frequency test (10 Hz – 100 kHz) and various bias voltages ranges (0.2 to 5.0 V), respectively. Investigation revealed that conductance was strongly dependent on the frequency and bias voltage-dependent. Conductance was inversely proportional to the capacitance among the frequency. Meanwhile, the capacitance and series resistance were dependent until a certain value at the low frequency region, but the capacitance and series resistance were independent at high frequencies.

A novel millimetre-wave gallium arsenide beam-lead mixer diode with cutoff frequency > 2 THz

1991 ◽  
Vol 69 (3-4) ◽  
pp. 180-184 ◽  
Author(s):  
Hsien-Ching Huang ◽  
Arvind Swarup ◽  
Richard Henderson
Keyword(s):  
Figure Of Merit ◽  
Series Resistance ◽  
Cutoff Frequency ◽  
Polyimide Film ◽  
Parasitic Capacitance ◽  
Zero Bias ◽  
Millimetre Wave ◽  
Novel Structure ◽  
Production Techniques ◽  
Beam Lead

A low-parasitic-capacitance beam-lead Schottky diode has been developed for millimetre-wavelength mixer applications from 30–110 GHz. It has a novel structure that incorporates a polyimide film to support the beam leads and the GaAs active area. Typical devices have an ideality factor of 1.12, a parasitic capacitance of 10 fF, a zero-bias-junction capacitance of 20 fF, a series resistance of 2.5 Ω, and hence a figure of merit cutoff frequency of over 3 THz. Diodes tested in production mixers at 36 GHz have yielded a conversion loss of 5.14 dB. The devices, fabricated by repeatable production techniques, are mechanically rugged and suitable for qualification to space and defence standards.

scholarly journals THE SERIES RESISTANCE AND CUTOFF FREQUENCY OF DOUBLE DIFFUSED PARAMETRIC DIODE

1964 ◽  
Vol 20 (6) ◽  
pp. 540
Author(s):  
SHIUH GEN-TWEN ◽  
CHUO CHI-TSANG
Keyword(s):  
Series Resistance ◽  
Cutoff Frequency

New type electron gun with electrostatic and electromagnetic lenses

1978 ◽  
Vol 36 (1) ◽  
pp. 62-63
Author(s):  
T. Ichinokawa ◽  
H. Maeda
Keyword(s):  
Electron Microscopy ◽  
Electron Beam ◽  
Optimum Condition ◽  
Bias Voltage ◽  
Electron Gun ◽  
Charge Effect ◽  
Micro Fabrication ◽  
Maximum Brightness ◽  
New Type ◽  
The Ideal

I. IntroductionThermionic electron gun with the Wehnelt grid is popularly used in the electron microscopy and electron beam micro-fabrication. It is well known that this gun could get the ideal brightness caluculated from the Lengumier and Richardson equations under the optimum condition. However, the design and ajustment to the optimum condition is not so easy. The gun has following properties with respect to the Wehnelt bias; (1) The maximum brightness is got only in the optimum bias. (2) In the larger bias than the optimum, the brightness decreases with increasing the bias voltage on account of the space charge effect. (3) In the smaller bias than the optimum, the brightness decreases with bias voltage on account of spreading of the cross over spot due to the aberrations of the electrostatic immersion lens.In the present experiment, a new type electron gun with the electrostatic and electromagnetic lens is designed, and its properties are examined experimentally.

UHV-STM studies of silicon nano-pyramid growth on silicon surface at high temperature

1992 ◽  
Vol 50 (2) ◽  
pp. 1144-1145
Author(s):  
T. Sato ◽  
S. Kitamura ◽  
T. Sueyoshl ◽  
M. Iwatukl ◽  
C. Nielsen
Keyword(s):  
High Temperature ◽  
Relaxation Process ◽  
Thermal Effect ◽  
Bias Voltage ◽  
Silicon Surface ◽  
Growth Process ◽  
Tunneling Current ◽  
Fabrication Technique ◽  
Nano Fabrication ◽  
Electromigration Effect

Recently, the growth process and relaxation process of crystalline structures were studied by observing a SI nano-pyramid which was built on a Si surface with a UHV-STM. A UHV-STM (JEOL JSTM-4000×V) was used for studying a heated specimen, and the specimen was kept at high temperature during observation. In this study, the nano-fabrication technique utilizing the electromigration effect between the STM tip and the specimen was applied. We observed Si atoms migrated towords the tip on a high temperature Si surface.Clean surfaces of Si(lll)7×7 and Si(001)2×l were prepared In the UHV-STM at a temperature of approximately 600 °C. A Si nano-pyramid was built on the Si surface at a tunneling current of l0nA and a specimen bias voltage of approximately 0V in both polarities. During the formation of the pyramid, Images could not be observed because the tip was stopped on the sample. After the formation was completed, the pyramid Image was observed with the same tip. After Imaging was started again, the relaxation process of the pyramid started due to thermal effect.

Behavior of contact-silicided TFSOI gate structures

1994 ◽  
Vol 52 ◽  
pp. 860-861
Author(s):  
N. David Theodore ◽  
Juergen Foerstner ◽  
Peter Fejes
Keyword(s):  
Semiconductor Device ◽  
Series Resistance ◽  
Field Effect Transistors ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
Continuous Layer ◽  
Buried Oxide ◽  
Device Structures ◽  
Thin Silicon

As semiconductor device dimensions shrink and packing-densities rise, issues of parasitic capacitance and circuit speed become increasingly important. The use of thin-film silicon-on-insulator (TFSOI) substrates for device fabrication is being explored in order to increase switching speeds. One version of TFSOI being explored for device fabrication is SIMOX (Silicon-separation by Implanted OXygen).A buried oxide layer is created by highdose oxygen implantation into silicon wafers followed by annealing to cause coalescence of oxide regions into a continuous layer. A thin silicon layer remains above the buried oxide (~220 nm Si after additional thinning). Device structures can now be fabricated upon this thin silicon layer.Current fabrication of metal-oxidesemiconductor field-effect transistors (MOSFETs) requires formation of a polysilicon/oxide gate between source and drain regions. Contact to the source/drain and gate regions is typically made by use of TiSi2 layers followedby Al(Cu) metal lines. TiSi2 has a relatively low contact resistance and reduces the series resistance of both source/drain as well as gate regions

Sign in / Sign up

Export Citation Format

Share Document