Evaluation of the effect of X-ray detectable defects on electrical performance of semiconductors

1963 ◽  
Vol 51 (3) ◽  
pp. 514-514 ◽  
Author(s):  
R.L. Morris ◽  
D. Wolin
Keyword(s):  
2013 ◽  
Vol 712-715 ◽  
pp. 293-297
Author(s):  
Li Li

Pt/Bi3.15Nd0.85Ti3O12(BNT)/Pt ferroelectric capacitors were monitored using in situ X-ray irradiation with 10 keV at BL14B1 beamline (Shanghai Synchrotron Radiation Facility). BL14B1 combined with a ferroelectric analyzer enabled measurements in situ of electrical performance. The hysteresis curve (PE) of distortion depended on the polarization during irradiation, but the diffracted intensities of the (117) peak did not change in the beginning. ThePEcurve had a negligible change from 2.09×109Gy to 4.45×109Gy. Finally, bothPrandPr+very rapidly increased, but the intensities of (117) decreased. The hysteresis loops were remarkably deformed at the maximum total dose of 4.87×109Gy.


MRS Advances ◽  
2020 ◽  
Vol 5 (52-53) ◽  
pp. 2727-2735
Author(s):  
Nidhi ◽  
Tashi Nautiyal ◽  
Samaresh Das

AbstractSeveral techniques have been employed for large-scale synthesis of group 10 transition metal dichalcogenides (TMDCs) based on platinum and palladium for nano- and opto-electronic device applications. Nickel Sulphides (NixSy), belonging to group 10 TMDC family, have been widely explored in the field of energy storage devices such as batteries and supercapacitors, etc. and commonly synthesized through the solution process or hydrothermal methods. However, the high-quality thin film growth of NixSy for nanoelectronic applications remains a central challenge. Here, we report the chemical vapor deposition (CVD) growth of NiS2 thin film onto a two-inch SiO2/Si substrate, for the first time. Techniques such as X-ray photoelectron spectroscopy, X-ray Diffraction, Raman Spectroscopy, Scanning Electron Microscopy, have been used to analyse the quality of this CVD grown NiS2 thin film. A high-quality crystalline thin film of thickness up to a few nanometres (~28 nm) of NiS2 has been analysed here. We also fabricated a field-effect device based on NiS2 thin film using interdigitated electrodes by optical lithography. The electrical performance of the fabricated device is characterized at room temperature. On applying the drain voltage from -2 to +2 V, the device shows drain current in the range of 10-9 A before annealing and in the range of 10-6 A after annealing. This, being comparable to that from devices based on MoS2 and other two-dimensional materials, projects CVD grown NiS2 as a good alternative material for nanoelectronic devices.


2012 ◽  
Vol 1433 ◽  
Author(s):  
Andrew A. Woodworth ◽  
Ali Sayir ◽  
Philip G. Neudeck ◽  
Balaji Raghothamachar ◽  
Michael Dudley

ABSTRACTCommercially available bulk silicon carbide (SiC) has a high number (>2000/cm2) of screw dislocations (SD) that have been linked to degradation of high-field power device electrical performance properties. Researchers at the NASA Glenn Research Center have proposed a method to mass-produce significantly higher quality bulk SiC. In order for this bulk growth method to become reality, growth of long single crystal SiC fibers must first be achieved. Therefore, a new growth method, Solvent-Laser Heated Floating Zone (Solvent-LHFZ), has been implemented. While some of the initial Solvent-LHFZ results have recently been reported, this paper focuses on further characterization of grown crystals and their growth fronts. To this end, secondary ion mass spectroscopy (SIMS) depth profiles, cross section analysis by focused ion beam (FIB) milling and mechanical polishing, and orientation and structural characterization by X-ray transmission Laue diffraction patterns and X-ray topography were used. Results paint a picture of a chaotic growth front, with Fe incorporation dependant on C concentration.


Energies ◽  
2019 ◽  
Vol 12 (4) ◽  
pp. 737
Author(s):  
Ke Wang ◽  
Hongwen Liu ◽  
Qing Yang ◽  
Lu Yin ◽  
Jisheng Huang

In a neutral ungrounded system, the high voltage fuses used to protect voltage transformers (VTs) often abnormally blow out, causing unbalanced VT operation. Fuses also fail to blow out in time, resulting in further damage to the VT. This paper reported the results of steady-state current testing, breaking characteristics, X-ray measurements, fuse corona testing, and electromagnetic transient impact testing for VT fuses. This paper comprehensively examines and analyzes the quality and electrical performance of VT fuses and provides new guidance for the use of high voltage fuses in voltage transformers. This paper recommends that 35 and 10 kV systems use fuses rated for a current of 1 A based on a single fuse, which is not easily oxidized and has a wound skeleton composed of an Ag or Ni melt.


2020 ◽  
Vol 2020 ◽  
pp. 1-13 ◽  
Author(s):  
Marouane EL Alouani ◽  
Saliha Alehyen ◽  
Mohammed EL Achouri ◽  
Abdelowahed Hajjaji ◽  
Chouaib Ennawaoui ◽  
...  

The influence of alkali cations on mix design of geopolymers is essential for their mechanical, thermal, and electrical performance. This research investigated the influence of alkali cation type on microscale characteristics and mechanical, dielectric, and thermal properties of fly ash-based geopolymer matrices. The geopolymers were elaborated via class F fly ash from the thermal plant Jorf Lasfar, El Jadida (Morocco), and several alkaline solutions. Morphological, structural, mechanical, dielectric, and thermal characteristics of materials synthesized via fly ash with different proportions of KOH and NaOH aged 28 days were evaluated. The physicochemical properties of class F fly ash-based geopolymers were assessed using X-ray diffraction (XRD), Fourier-transform infrared spectrometry (FTIR), and scanning electron microscopy coupled with energy dispersive X-ray spectroscopy (SEM/EDX) analyses. Based on readings of the results obtained, XRD and FTIR analysis detected the creation of semicrystalline potassium/sodium aluminate-silicate hydrate (KASH/NASH) gel in the elaborated matrices after the geopolymerization reaction. The SEM analysis proved the formation of alkali alumina-silicate hydrate gel in the raw material particles after the polycondensation stage. Experimental compressive strength data indicated that the highest compressive strength (39 MPa) was produced by the alkaline activator (75% KOH/25% NaOH). The dielectric parameters values of the elaborated materials changed depending of the mass ratios KOH/NaOH. Dielectric findings demonstrated that geopolymers containing 100% NaOH have better dielectric performances. The fire resistance study revealed that the geopolymer binders induced by KOH are stable up to 600°C. Based on these results, it can be deduced that the formulated geopolymer concrete possesses good mechanical, dielectric, and fire resistance properties.


2011 ◽  
Vol 1323 ◽  
Author(s):  
N.R. Paudel ◽  
K.A. Wieland ◽  
A.D. Compaan

ABSTRACTPolycrystalline thin-film CdS/CdTe PV cells nearly always require “activation” with vapors containing chlorine and oxygen near 400 oC in order to realize the highest cell performance, even when growth occurs near 600 oC. In this study we have used film growth near 270 oC by magnetron sputtering in an oxygen-free ambient and have studied the effects of post-deposition heat treatments for 20 minutes at 400, 425 and 450 oC without CdCl2 in a dry air ambient. The heat treatments enhanced grain growth and produced re-crystallization of the CdTe film at all three temperatures, but 450 oC was required to reach the best electrical performance. Grain size increased from a couple of hundred nanometers to more than a micron as the preferred (111) growth orientation decreased. Efficiencies up to 11.6% were achieved with no CdCl2 compared to ~13% with activation at 387 oC in the presence of CdCl2 vapors. X-ray diffraction and quantum efficiency measurements show interdiffusion of CdS and CdTe at 450 oC comparable with a standard CdCl2 treatment at 387 oC. The results are discussed in terms of CdSTe alloy gradients and minority-carrier diffusion lengths.


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