Large-Scale Synthesis of Nickel Sulfide for Electronic Device Applications

MRS Advances ◽  
2020 ◽  
Vol 5 (52-53) ◽  
pp. 2727-2735
Author(s):  
Nidhi ◽  
Tashi Nautiyal ◽  
Samaresh Das
Keyword(s):  
Thin Film ◽  
Photoelectron Spectroscopy ◽  
Large Scale ◽  
Electronic Device ◽  
Electrical Performance ◽  
High Quality ◽  
X Ray ◽  
Device Applications ◽  
Large Scale Synthesis ◽  
Group 10

AbstractSeveral techniques have been employed for large-scale synthesis of group 10 transition metal dichalcogenides (TMDCs) based on platinum and palladium for nano- and opto-electronic device applications. Nickel Sulphides (NixSy), belonging to group 10 TMDC family, have been widely explored in the field of energy storage devices such as batteries and supercapacitors, etc. and commonly synthesized through the solution process or hydrothermal methods. However, the high-quality thin film growth of NixSy for nanoelectronic applications remains a central challenge. Here, we report the chemical vapor deposition (CVD) growth of NiS2 thin film onto a two-inch SiO2/Si substrate, for the first time. Techniques such as X-ray photoelectron spectroscopy, X-ray Diffraction, Raman Spectroscopy, Scanning Electron Microscopy, have been used to analyse the quality of this CVD grown NiS2 thin film. A high-quality crystalline thin film of thickness up to a few nanometres (~28 nm) of NiS2 has been analysed here. We also fabricated a field-effect device based on NiS2 thin film using interdigitated electrodes by optical lithography. The electrical performance of the fabricated device is characterized at room temperature. On applying the drain voltage from -2 to +2 V, the device shows drain current in the range of 10-9 A before annealing and in the range of 10-6 A after annealing. This, being comparable to that from devices based on MoS2 and other two-dimensional materials, projects CVD grown NiS2 as a good alternative material for nanoelectronic devices.

scholarly journals Facile and Large-scale Synthesis of Defective Black TiO2−x(B) Nanosheets for Efficient Visible-light-driven Photocatalytic Hydrogen Evolution

Catalysts ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 1048 ◽  
Author(s):  
JingCheng Xu ◽  
JiaJia Zhang ◽  
ZhengYang Cai ◽  
He Huang ◽  
TianHao Huang ◽  
...  
Keyword(s):  
Visible Light ◽  
Hydrogen Evolution ◽  
Photoelectron Spectroscopy ◽  
Large Scale ◽  
Broad Band ◽  
Mass Ratio ◽  
X Ray ◽  
Black Tio2 ◽  
Large Scale Synthesis ◽  
Nabh4 Reduction

In the work, we firstly report the facile and large-scale synthesis of defective black TiO2−x(B) nanosheets via a dual-zone NaBH4 reduction method. The structure, physico-chemical, and optical properties of TiO2−x(B) nanosheets were systematically characterized by powder X-ray diffraction, Raman spectroscopy, UV-Vis absorption spectroscopy, and X-ray photoelectron spectroscopy, etc. The concentration of Ti3+ can be well tuned by NaBH4 reduction. With increasing the mass ratio of NaBH4 to TiO2(B), the generation of Ti3+ defects gives rise to the increased intensity of a broad band absorption in the visible wavelength range. It is demonstrated that the TiO2−x(B) photocatalyst synthesized with the mass ratio of NaBH4 to TiO2(B) of 3:1 exhibited an optimum photocatalytic activity and excellent photostability for hydrogen evolution under visible-light irradiation. By combining the advantages of 2D TiO2(B) nanosheets architecture with those of Ti3+ self-doping and simultaneous production of oxygen vacancy sites, the enhanced photocatalytic performance of the defective TiO2−x(B) nanosheets was achieved.

X-Ray Photoelectron Spectroscopy Characterization of Diamond Thin Film Surfaces for Electronic Device Application

2000 ◽  
Vol 39 (Part 2, No. 6B) ◽  
pp. L575-L578
Author(s):  
Tetsuro Maki ◽  
Akihiro Ito ◽  
Hideki Kawamura ◽  
Takeshi Kobayashi ◽  
Masahiko Aoki ◽  
...  
Keyword(s):  
Thin Film ◽  
Photoelectron Spectroscopy ◽  
Electronic Device ◽  
X Ray ◽  
Device Application ◽  
Diamond Thin Film ◽  
Electronic Device Application

Large-scale synthesis of amorphous phosphorus nitride imide nanotubes with high luminescent properties

2005 ◽  
Vol 20 (2) ◽  
pp. 325-330 ◽  
Author(s):  
Qixun Guo ◽  
Qing Yang ◽  
Lei Zhu ◽  
Chengqi Yi ◽  
Yi Xie
Keyword(s):  
Electron Microscope ◽  
Photoelectron Spectroscopy ◽  
Large Scale ◽  
Luminescent Properties ◽  
Atomic Ratio ◽  
Binding Energies ◽  
X Ray ◽  
Microscope Images ◽  
Large Scale Synthesis ◽  
20 Nm

A facile solvothermal approach was successfully developed for the large-scale synthesis of amorphous phosphorus nitride imide (H3xP3N5+x) nanotubes with high luminescent properties by the reaction of 1,3,5-hexachlorotriphosphazene (P3N3Cl6) with sodium amide (NaNH2) at low temperatures. Transmission electron microscope images showed that the inner diameter of nanotubes is 120 ± 20 nm, wall thickness is 40 ± 10 nm, and length ranges from several to ten micrometers. Scanning electron microscope images revealed that the proportion of the nanotubes exceeds 90%. X-ray photoelectron spectroscopy spectra indicated that the binding energies of P2p and N1s are 133.30 and 398.40 eV, respectively, and the atomic ratio of P:N is 3:5.13. The infrared spectra of the sample are comparable to those of the reported HPN2 and HP4N7. Thermogravimetric analysis revealed that the product is very robust in a nonoxidizing atmosphere. The structure and the optical properties of the product and the annealed samples were investigated by x-ray diffraction and photoluminescence measurements, respectively.

scholarly journals X-ray Photoelectron Spectroscopy Analysis of Chitosan–Graphene Oxide-Based Composite Thin Films for Potential Optical Sensing Applications

Polymers ◽  
2021 ◽  
Vol 13 (3) ◽  
pp. 478
Author(s):  
Wan Mohd Ebtisyam Mustaqim Mohd Daniyal ◽  
Yap Wing Fen ◽  
Silvan Saleviter ◽  
Narong Chanlek ◽  
Hideki Nakajima ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Graphene Oxide ◽  
Photoelectron Spectroscopy ◽  
Functional Group ◽  
Optical Sensing ◽  
Composite Thin Films ◽  
Cobalt Ions ◽  
X Ray ◽  
Sensing Applications

In this study, X-ray photoelectron spectroscopy (XPS) was used to study chitosan–graphene oxide (chitosan–GO) incorporated with 4-(2-pyridylazo)resorcinol (PAR) and cadmium sulfide quantum dot (CdS QD) composite thin films for the potential optical sensing of cobalt ions (Co2+). From the XPS results, it was confirmed that carbon, oxygen, and nitrogen elements existed on the PAR–chitosan–GO thin film, while for CdS QD–chitosan–GO, the existence of carbon, oxygen, cadmium, nitrogen, and sulfur were confirmed. Further deconvolution of each element using the Gaussian–Lorentzian curve fitting program revealed the sub-peak component of each element and hence the corresponding functional group was identified. Next, investigation using surface plasmon resonance (SPR) optical sensor proved that both chitosan–GO-based thin films were able to detect Co2+ as low as 0.01 ppm for both composite thin films, while the PAR had the higher binding affinity. The interaction of the Co2+ with the thin films was characterized again using XPS to confirm the functional group involved during the reaction. The XPS results proved that primary amino in the PAR–chitosan–GO thin film contributed more important role for the reaction with Co2+, as in agreement with the SPR results.

scholarly journals Performance Improvement of ZnSnO Thin-Film Transistors with Low-Temperature Self-Combustion Reaction

Electronics ◽  
2021 ◽  
Vol 10 (9) ◽  
pp. 1099
Author(s):  
Ye-Ji Han ◽  
Se Hyeong Lee ◽  
So-Young Bak ◽  
Tae-Hee Han ◽  
Sangwoo Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Photoelectron Spectroscopy ◽  
Large Scale ◽  
Low Cost ◽  
Thermal Analyses ◽  
Thin Film Transistor ◽  
Sol Gel ◽  
Annealing Temperatures ◽  
Zinc Tin Oxide ◽  
Thermal Limitation

Conventional sol-gel solutions have received significant attention in thin-film transistor (TFT) manufacturing because of their advantages such as simple processing, large-scale applicability, and low cost. However, conventional sol-gel processed zinc tin oxide (ZTO) TFTs have a thermal limitation in that they require high annealing temperatures of more than 500 °C, which are incompatible with most flexible plastic substrates. In this study, to overcome the thermal limitation of conventional sol-gel processed ZTO TFTs, we demonstrated a ZTO TFT that was fabricated at low annealing temperatures of 350 °C using self-combustion. The optimized device exhibited satisfactory performance, with μsat of 4.72 cm2/V∙s, Vth of −1.28 V, SS of 0.86 V/decade, and ION/OFF of 1.70 × 106 at a low annealing temperature of 350 °C for one hour. To compare a conventional sol-gel processed ZTO TFT with the optimized device, thermogravimetric and differential thermal analyses (TG-DTA) and X-ray photoelectron spectroscopy (XPS) were implemented.

High Quality GaAs Mis Diodes With Very Low Surface State Density

1990 ◽  
Vol 209 ◽  
Author(s):  
Yoshihisa Fujisaki ◽  
Sumiko Sakai ◽  
Saburo Ataka ◽  
Kenji Shibata
Keyword(s):  
Chemical Vapor Deposition ◽  
Density Of States ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
State Density ◽  
High Quality ◽  
Metal Insulator ◽  
X Ray ◽  
Mis Devices

ABSTRACTHigh quality GaAs/SiO2 MIS( Metal Insulator Semiconductor ) diodes were fabricated using (NH4)2S treatment and photo-assisted CVD( Chemical Vapor Deposition ). The density of states at the GaAs and SiO2 interface is the order of 1011 cm-2eV-1 throughout the forbidden energy range, which is smaller by the order of two than that of the MIS devices made by the conventional CVD process. The mechanism attributable to the interface improvement was investigated through XPS( X-ray Photoelectron Spectroscopy ) analyses.

Sign in / Sign up

Export Citation Format

Share Document