scholarly journals Characterization of 4H Silicon Carbide Films Grown by Solvent-Laser Heated Floating Zone

2012 ◽  
Vol 1433 ◽  
Author(s):  
Andrew A. Woodworth ◽  
Ali Sayir ◽  
Philip G. Neudeck ◽  
Balaji Raghothamachar ◽  
Michael Dudley
Keyword(s):  
Silicon Carbide ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Growth Front ◽  
Electrical Performance ◽  
Floating Zone ◽  
X Ray ◽  
Growth Method ◽  
Laser Heated

ABSTRACTCommercially available bulk silicon carbide (SiC) has a high number (>2000/cm2) of screw dislocations (SD) that have been linked to degradation of high-field power device electrical performance properties. Researchers at the NASA Glenn Research Center have proposed a method to mass-produce significantly higher quality bulk SiC. In order for this bulk growth method to become reality, growth of long single crystal SiC fibers must first be achieved. Therefore, a new growth method, Solvent-Laser Heated Floating Zone (Solvent-LHFZ), has been implemented. While some of the initial Solvent-LHFZ results have recently been reported, this paper focuses on further characterization of grown crystals and their growth fronts. To this end, secondary ion mass spectroscopy (SIMS) depth profiles, cross section analysis by focused ion beam (FIB) milling and mechanical polishing, and orientation and structural characterization by X-ray transmission Laue diffraction patterns and X-ray topography were used. Results paint a picture of a chaotic growth front, with Fe incorporation dependant on C concentration.

Characterization of Natural and Synthesized FeTiO3 Crystals With RBS/PIXE/XRD

1997 ◽  
Vol 07 (03n04) ◽  
pp. 265-275
Author(s):  
R. Q. Zhang ◽  
S. Yamamoto ◽  
Z. N. Dai ◽  
K. Narumi ◽  
A. Miyashita ◽  
...  
Keyword(s):  
Single Crystals ◽  
Ion Beam ◽  
Pressure Control ◽  
Floating Zone ◽  
X Ray Diffraction ◽  
X Ray ◽  
Beam Analysis ◽  
Ppm Level

Natural FeTiO 3 (illuminate) and synthesized FeTiO 3, single crystals were characterized by Rutherford backscattering spectroscopy combined with channeling technique and particle-induced x-ray emission (RBS-C and PIXE). The results obtained by the ion beam analysis were supplemented by the x-ray diffraction analysis to identify the crystallographic phase. Oriented single crystals of synthesized FeTiO 3 were grown under the pressure control of CO 2 and H 2 mixture gas using a single-crystal floating zone technique. The crystal quality of synthesized FeTiO 3 single crystals could be improved by the thermal treatment but the exact pressure control is needed to avoid the precipitation of Fe 2 O 3 even during the annealing procedure. Natural FeTiO 3 contains several kinds of impurities such as Mn , Mg , Na and Si . The synthesized samples contain Al , Si and Na which are around 100 ppm level as impurities. The PBS-C results of the natural sample imply that Mn impurities occupy the Fe sublattice in FeTiO 3 or in mixed phase between ilmenite and hematite.

Structural Characterization of the Growth Front of 4H-SiC Boules Grown Using the Physical Vapor Transport Growth Method

2018 ◽  
Vol 924 ◽  
pp. 15-18
Author(s):  
Masashi Sonoda ◽  
Kentaro Shioura ◽  
Takahiro Nakano ◽  
Noboru Ohtani ◽  
Masakazu Katsuno ◽  
...  
Keyword(s):  
High Resolution ◽  
Surface Morphology ◽  
Defect Structure ◽  
Growth Front ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
X Ray Diffraction ◽  
X Ray ◽  
Growth Method

The defect structure at the growth front of 4H-SiC boules grown using the physical vapor transport (PVT) method has been investigated using high resolution x-ray diffraction and x-ray topography. The crystal parameters such as the c-lattice constant exhibited characteristic variations across the growth front, which appeared to be caused by variation in surface morphology of the as-grown surface of the boules rather than the defect structure underneath the surface. X-ray topography also revealed that basal plane dislocations are hardly nucleated at the growth front during PVT growth of 4H-SiC crystals.

Characterization of Second-Phase Inclusion in Silicon Carbide Powders

2015 ◽  
Vol 821-823 ◽  
pp. 100-103
Author(s):  
Ta Ching Hsiao ◽  
Shen Tsao ◽  
Sergey Nagalyuk ◽  
Evgeny Mokhov
Keyword(s):  
Silicon Carbide ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Element Distribution ◽  
Second Phase ◽  
X Ray Diffraction ◽  
Dual Beam ◽  
Metal Doped ◽  
Dopant Element

A specific transition metal is used as a dopant element in silicon carbide powders to create the compensation effect. According to ab-initio simulation, vanadium, chromium, and manganese-induced compensation decrease the lifetime of the acceptor carrier and cause higher resistance when boron is the main impurity. Since the silicon carbide lattice has low solubility, excess metal precipitates on the surface of powders, particularly on the grain boundaries. The compositions of matrix and precipitation in the powders reveal obvious differences between the two areas. The X-ray diffraction (XRD) pattern shows the structure of VSi2, which indicates the existence of a second phase. Dual-beam focused ion beam (DBFIB) is used to further analyze the geography inside the powders. A cross-section view by DBFIB shows a second phase in the grains with a composition similar to that in the grain boundary. Metal-doped silicon carbide powders are used as starting materials to conduct crystal growth with better dopant element distribution.

X-ray nanotomography and focused-ion-beam sectioning for quantitative three-dimensional analysis of nanocomposites

2016 ◽  
Vol 23 (4) ◽  
pp. 990-996 ◽  
Author(s):  
Christopher E. Shuck ◽  
Mathew Frazee ◽  
Andrew Gillman ◽  
Matthew T. Beason ◽  
Ibrahim Emre Gunduz ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Three Dimensional ◽  
Nondestructive Method ◽  
Material Behavior ◽  
Dimensional Structure ◽  
X Ray ◽  
The Monte Carlo Method ◽  
Micrometer Size

Knowing the relationship between three-dimensional structure and properties is paramount for complete understanding of material behavior. In this work, the internal nanostructure of micrometer-size (∼10 µm) composite Ni/Al particles was analyzed using two different approaches. The first technique, synchrotron-based X-ray nanotomography, is a nondestructive method that can attain resolutions of tens of nanometers. The second is a destructive technique with sub-nanometer resolution utilizing scanning electron microscopy combined with an ion beam and `slice and view' analysis, where the sample is repeatedly milled and imaged. The obtained results suggest that both techniques allow for an accurate characterization of the larger-scale structures, while differences exist in the characterization of the smallest features. Using the Monte Carlo method, the effective resolution of the X-ray nanotomography technique was determined to be ∼48 nm, while focused-ion-beam sectioning with `slice and view' analysis was ∼5 nm.

SiC Growth by Solvent-Laser Heated Floating Zone

2012 ◽  
Vol 717-720 ◽  
pp. 49-52 ◽  
Author(s):  
Andrew A. Woodworth ◽  
Philip G. Neudeck ◽  
Ali Sayir ◽  
David J. Spry ◽  
Andrew J. Trunek ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Laser Heating ◽  
Source Material ◽  
Floating Zone ◽  
X Ray ◽  
Single Crystal Sic ◽  
Growth Method ◽  
Laser Heated ◽  
Growth Methods

In an effort to grow single crystal SiC fibers for seed crystals the following two growth methods have been coupled in this work: traveling solvent and laser heated floating zone to create the solvent-laser heated floating zone (Solvent-LHFZ) crystal growth method. This paper discusses the results of these initial experiments, which includes, source material, laser heating, and analysis of the first ever SiC crystals (confirmed by synchrotron white beam x-ray topography)

Spatially Resolved Characterization of Plastic Deformation Induced by Focused-Ion Beam Processing in Structured InGaN/GaN Layers

2007 ◽  
Vol 1020 ◽  
Author(s):  
R. Barabash ◽  
G. Ice ◽  
R. Kroger ◽  
H. Lohmeyer ◽  
K. Sebald ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Structural Changes ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
X Ray ◽  
Spatially Resolved ◽  
Transmission Electron ◽  
Impact Area ◽  
Scanning Electron

AbstractIn this study the results of polychromatic X-ray microbeam analysis (PXM) of the structural changes caused by FIB in nitride heterostructures are presented and discussed in connection with micro-photoluminescence (μ-PL), fluorescent analysis, scanning electron (SEM) and transmission electron microscopy (TEM) data. It is shown that FIB processing distorts the lattice in the InGaN/GaN layer not only in the immediate vicinity of the processed area but also in the surroundings. A narrow amorphidized top layer is formed in the direct ion beam impact area.

scholarly journals DESY NanoLab

2016 ◽  
Vol 2 ◽  
Author(s):  
Andreas Stierle ◽  
Thomas F. Keller ◽  
Heshmat Noei ◽  
Vedran Vonk ◽  
Ralf Roehlsberger
Keyword(s):  
Magnetic Properties ◽  
Scanning Probe Microscopy ◽  
Focused Ion Beam ◽  
State Of The Art ◽  
Ion Beam ◽  
Scanning Probe ◽  
Light Sources ◽  
X Ray Diffraction ◽  
X Ray

The DESY NanoLab is a facility providing access to nano-characterization, nano-structuring and nano-synthesis techniques which are complementary to the advanced X-ray techniques available at DESY’s light sources. It comprises state-of-the art scanning probe microscopy and focused ion beam manufacturing, as well as surface sensitive spectroscopy techniques for chemical analysis. Specialized laboratory x-ray diffraction setups are available for a successful sample pre-characterization before the precious synchrotron beamtimes. Future upgrades will include as well characterization of magnetic properties.

Electrical Characterization of Different Failure Modes in Sub-100 nm Devices Using Nanoprobing Technique

2009 ◽  
Author(s):  
E. Hendarto ◽  
S.L. Toh ◽  
J. Sudijono ◽  
P.K. Tan ◽  
H. Tan ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Focused Ion Beam ◽  
Failure Modes ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Nickel Silicide ◽  
Fault Isolation ◽  
Technology Nodes ◽  
Scanning Electron

Abstract The scanning electron microscope (SEM) based nanoprobing technique has established itself as an indispensable failure analysis (FA) technique as technology nodes continue to shrink according to Moore's Law. Although it has its share of disadvantages, SEM-based nanoprobing is often preferred because of its advantages over other FA techniques such as focused ion beam in fault isolation. This paper presents the effectiveness of the nanoprobing technique in isolating nanoscale defects in three different cases in sub-100 nm devices: soft-fail defect caused by asymmetrical nickel silicide (NiSi) formation, hard-fail defect caused by abnormal NiSi formation leading to contact-poly short, and isolation of resistive contact in a large electrical test structure. Results suggest that the SEM based nanoprobing technique is particularly useful in identifying causes of soft-fails and plays a very important role in investigating the cause of hard-fails and improving device yield.

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