High Efficiency Sputtered CdS/CdTe Cells without CdCl2 Activation

2011 ◽  
Vol 1323 ◽  
Author(s):  
N.R. Paudel ◽  
K.A. Wieland ◽  
A.D. Compaan
Keyword(s):  
High Efficiency ◽  
Minority Carrier ◽  
Film Growth ◽  
Heat Treatments ◽  
Cdte Film ◽  
Electrical Performance ◽  
X Ray Diffraction ◽  
Polycrystalline Thin Film ◽  
X Ray ◽  
Post Deposition

ABSTRACTPolycrystalline thin-film CdS/CdTe PV cells nearly always require “activation” with vapors containing chlorine and oxygen near 400 oC in order to realize the highest cell performance, even when growth occurs near 600 oC. In this study we have used film growth near 270 oC by magnetron sputtering in an oxygen-free ambient and have studied the effects of post-deposition heat treatments for 20 minutes at 400, 425 and 450 oC without CdCl2 in a dry air ambient. The heat treatments enhanced grain growth and produced re-crystallization of the CdTe film at all three temperatures, but 450 oC was required to reach the best electrical performance. Grain size increased from a couple of hundred nanometers to more than a micron as the preferred (111) growth orientation decreased. Efficiencies up to 11.6% were achieved with no CdCl2 compared to ~13% with activation at 387 oC in the presence of CdCl2 vapors. X-ray diffraction and quantum efficiency measurements show interdiffusion of CdS and CdTe at 450 oC comparable with a standard CdCl2 treatment at 387 oC. The results are discussed in terms of CdSTe alloy gradients and minority-carrier diffusion lengths.

Properties of Sputter Deposited ZnO Films Co-doped with Lithium and Phosphorus

2013 ◽  
Vol 1494 ◽  
pp. 77-82
Author(s):  
T. N. Oder ◽  
A. Smith ◽  
M. Freeman ◽  
M. McMaster ◽  
B. Cai ◽  
...  
Keyword(s):  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sapphire Substrates ◽  
Hall Effect Measurements ◽  
Sputter Deposited ◽  
P Type ◽  
Post Deposition ◽  
Co Doped

ABSTRACTThin films of ZnO co-doped with lithium and phosphorus were deposited on sapphire substrates by RF magnetron sputtering. The films were sequentially deposited from ultra pure ZnO and Li3PO4 solid targets. Post deposition annealing was carried using a rapid thermal processor in O2 and N2 at temperatures ranging from 500 °C to 1000 °C for 3 min. Analyses performed using low temperature photoluminescence spectroscopy measurements reveal luminescence peaks at 3.359, 3.306, 3.245 eV for the co-doped samples. The x-ray diffraction 2θ-scans for all the films showed a single peak at about 34.4° with full width at half maximum of about 0.17°. Hall Effect measurements revealed conductivities that change from p-type to n-type over time.

Adsorption of the harmful hormone ethinyl estradiol inside hydrophobic cavities of CTA+ intercalated montmorillonite

2016 ◽  
Vol 74 (3) ◽  
pp. 663-671 ◽  
Author(s):  
A. E. Burgos ◽  
Tatiana A. Ribeiro-Santos ◽  
Rochel M. Lago
Keyword(s):  
Cetyltrimethylammonium Bromide ◽  
High Efficiency ◽  
Interlayer Space ◽  
Ethinyl Estradiol ◽  
Significant Loss ◽  
X Ray Diffraction ◽  
X Ray ◽  
Hydrophobic Cavity ◽  
Adsorption Capacities ◽  
Derivative Thermogravimetry

Hydrophobic cavities produced by cetyltrimethylammonium cation (CTA+) exchanged and trapped in the interlayer space of montmorillonite were used to remove the harmful hormone contaminant ethinyl estradiol (EE2) from water. X-ray diffraction, thermogravimetry/derivative thermogravimetry, elemental analysis (carbon, hydrogen, nitrogen), Fourier transform infrared, scanning electron microscopy/energy dispersive spectroscopy, Brunauer–Emmett–Teller and contact angle analyses showed that the intercalation of 9, 16 and 34 wt% CTA+ in the montmorillonite resulted in the d001 expansion from 1.37 to 1.58, 2.09 and 2.18 nm, respectively. EE2 adsorption experiments showed that the original clay montmorillonite does not remove EE2 from water whereas the intercalated composites showed high efficiency with adsorption capacities of 4.3, 8.8 and 7.3 mg g−1 for M9CTA+, M16CTA+ and M34CTA+, respectively. Moreover, experiments with montmorillonite simply impregnated with cetyltrimethylammonium bromide showed that the intercalation of CTA+ to form the hydrophobic cavity is very important for the adsorption properties. Simple solvent extraction can be used to remove the adsorbed EE2 without significant loss of CTA+, which allows the recovery and reuse of the adsorbent for at least five times.

Colossal Magnetoresistance in Thick La0.7Ca0.3MnO3 Films

1995 ◽  
Vol 384 ◽  
Author(s):  
Randolph E. Treece ◽  
P. Dorsey ◽  
M. Rubinstein ◽  
J. M. Byers ◽  
J. S. Horwitz ◽  
...  
Keyword(s):  
Colossal Magnetoresistance ◽  
Single Phase ◽  
Laser Deposition ◽  
Orthorhombic Structure ◽  
X Ray Diffraction ◽  
Post Deposition Annealing ◽  
X Ray ◽  
Mr Effect ◽  
Deposited Films ◽  
Post Deposition

ABSTRACTThick films (0.6 and 2.0 μm) of the colossal magnetoresistance (CMR) material, La0.7Ca0.3MnO3 (LCMO), have been grown by pulsed laser deposition (PLD). The films were grown from single-phase LCMO targets in 100 mTorr 02 pressures and the material deposited on (100) LaAlO3 substrates at deposition temperatures of 800°C. The deposited films were characterized by X-ray diffraction (XRD), magnetic field-dependent resistivity, and Rutherford backscattering spectroscopy (RBS). The LCMO films were shown by XRD to adopt an orthorhombic structure. Brief post-deposition annealing led to ~50,000% and ~12,000% MR effect in the 0.6 μm and 2.0 μm films, respectively.

Substrate Temperature and La0.9Sr0.1Ga0.8Mg0.2O3-δ Electrolyte Film Growth by Radio Frequency Magnetron Sputtering

2015 ◽  
Vol 833 ◽  
pp. 127-133
Author(s):  
Jie Yu ◽  
Jie Xing ◽  
Xiu Hua Chen ◽  
Wen Hui Ma ◽  
Rui Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Radio Frequency ◽  
Film Growth ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electrolyte Film ◽  
Porous Anode

La0.9Sr0.1Ga0.8Mg0.2O3-δ (LSGM) electrolyte thin films were fabricated on La0.7Sr0.3Cr0.5Mn0.5O2.75 (LSCM) porous anode substrates by Radio Frequency (RF) magnetron sputtering method. The compatibility between LSGM and LSCM was examined. Microstructures of LSGM thin films fabricated were observed by scanning electron microscope (SEM). The effect of substrate temperature on LSGM thin films was clarified by X-ray Diffraction (XRD). Deposition rate increases firstly at the range of 50°C~150°C, and then decreases at the range of 150°C ~300°C. After annealing, perovskite structure with the same growth orientation forms at different substrate temperature. Crystallite size decreases at first, to the minimum point at 150°C, then increases as substrate temperature rises.

Combinatorial (Ba,Sr)TiO3 thin film growth: X-ray diffraction and Raman spectroscopy

2009 ◽  
Vol 106 (3) ◽  
pp. 034108 ◽  
Author(s):  
H. Bouyanfif ◽  
J. Wolfman ◽  
M. El Marssi ◽  
Y. Yuzyuk ◽  
R. Bodeux ◽  
...  
Keyword(s):  
Thin Film ◽  
Raman Spectroscopy ◽  
Film Growth ◽  
Thin Film Growth ◽  
Tio3 Thin Film ◽  
X Ray Diffraction ◽  
X Ray

Control by Mixed-Chloride Additives of the Quality and Homogeneity of Bulk Halide Perovskite upon Film Formation Process

2021 ◽  
Author(s):  
Thierry Pauporté ◽  
Daming zheng
Keyword(s):  
Solar Cells ◽  
Formation Process ◽  
High Efficiency ◽  
Film Formation ◽  
Perovskite Solar Cells ◽  
X Ray Diffraction ◽  
X Ray ◽  
Stability Issue ◽  
Halide Perovskite ◽  
The Stability

Nowadays, overcoming the stability issue of perovskite solar cells (PSCs) while keeping high efficiency has become an urgent need for the future of this technology. By using x-ray diffraction (XRD),...

scholarly journals Magnetron Sputtering of Nanolaminated Cr2AlB2

Coatings ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 735
Author(s):  
Pedro Berastegui ◽  
Lars Riekehr ◽  
Ulf Jansson
Keyword(s):  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Film Growth ◽  
X Ray Diffraction ◽  
Max Phases ◽  
Group 13 ◽  
X Ray ◽  
Early Transition Metal ◽  
Crystalline Films ◽  
Combinatorial Sputtering

A ternary Cr2AlB2 phase was deposited as a film using magnetron sputtering. Its anisotropic structure displays both structural and chemical similarities with the nanolaminated MAX phases (Mn+1AXn (n = 1–3) where M usually is an early transition metal, A is typically an element in group 13–14 and X is C or N), and can be described as CrB slabs separated by layers of Al. Combinatorial sputtering was used to optimise the sputtering process parameters for films with the Cr2AlB2 composition. The influences of substrate, temperature and composition were studied using X-ray diffraction, X-ray photoelectron spectroscopy and electron microscopy. Films deposited at room temperature were X-ray amorphous but crystalline films could be deposited on MgO substrates at 680 °C using a composite Al-B, Cr and Al targets. X-ray diffraction analyses showed that the phase composition and texture of the films was strongly dependent on the chemical composition. Films with several phases or with a single Cr2AlB2 phase could be deposited, but an additional Al target was required to compensate for a loss of Al at the high deposition temperatures used in this study. The microstructure evolution during film growth was strongly dependent on composition, with a change in texture in Al-rich films from a preferred [010] orientation to a [100]/[001] orientation. A model based on Al desorption from the surface of the growing grains is proposed to explain the texture variations.

Features of Laser Treatment of Corrosion-Resistant Steels of Austenitic and Carbide Classes

2020 ◽  
Vol 989 ◽  
pp. 296-300
Author(s):  
Tatiana Vasilievna Tarasova ◽  
I.S. Belashova ◽  
S.D. Kuzmin ◽  
S.A. Egorov
Keyword(s):  
Heat Treatment ◽  
Fiber Laser ◽  
Laser Treatment ◽  
High Efficiency ◽  
Laser Heat Treatment ◽  
Laser Shock ◽  
X Ray Diffraction ◽  
Surface Layers ◽  
Corrosion Resistant ◽  
X Ray

In this paper effect of a fiber laser on the microstructure and properties of steels 95X18 and 12X18H10T is shown. The regularities of changes in the structure of a laser-treated surface by X-ray diffraction and X-ray microscopic analyzes were studied. The high efficiency of laser heat treatment of steel 95X18 with the subsequent tempering, to improve the tribological properties of the surface layers has been established. For steel 12X18H10T laser shock hardening method (405 HV) is recognized to be effective.

scholarly journals Improvement of Photocatalytic Performance for the g-C3N4/MoS2 Composite Used for Hypophosphite Oxidation

2020 ◽  
Vol 2020 ◽  
pp. 1-9
Author(s):  
Wei Guan ◽  
Kuang He ◽  
Jianwei Du ◽  
Yong Wen ◽  
Mingshan Li ◽  
...  
Keyword(s):  
Photocatalytic Performance ◽  
High Efficiency ◽  
Emission Spectra ◽  
Chelating Agent ◽  
Photoelectron Spectra ◽  
X Ray Diffraction ◽  
Response Measurement ◽  
X Ray ◽  
Transient Photocurrent ◽  
Oxidation Efficiency

The synthesized g-C3N4/MoS2 composite was a high-efficiency photocatalytic for hypophosphite oxidation. In this work, a stable and cheap g-C3N4 worked as the chelating agent and combined with the MoS2 materials. The structures of the fabricated g-C3N4/MoS2 photocatalyst were characterized by some methods including X-ray diffraction (XRD), scanning electron microscopy (SEM), and X-ray photoelectron spectra (XPS). Moreover, the photocatalytic performances of various photocatalysts were measured by analyzing the oxidation efficiency of hypophosphite under visible light irradiation and the oxidation efficiency of hypophosphite using the g-C3N4/MoS2 photocatalyst which was 93.45%. According to the results, the g-C3N4/MoS2 composite showed a promising photocatalytic performance for hypophosphite oxidation. The improved photocatalytic performance for hypophosphite oxidation was due to the effective charge separation analyzed by the photoluminescence (PL) emission spectra. The transient photocurrent response measurement indicated that the g-C3N4/MoS2 composites (2.5 μA cm–2) were 10 times improved photocurrent intensity and 2 times improved photocurrent intensity comparing with the pure g-C3N4 (0.25 μA cm–2) and MoS2 (1.25 μA cm–2), respectively. The photocatalytic mechanism of hypophosphite oxidation was analyzed by adding some scavengers, and the recycle experiments indicated that the g-C3N4/MoS2 composite had a good stability.

Effect of Sputtering Pressure on the Formation of Semiconducting Mg2Si Films

2010 ◽  
Vol 663-665 ◽  
pp. 166-169
Author(s):  
Qing Quan Xiao ◽  
Quan Xie ◽  
Ke Jie Zhao ◽  
Zhi Qiang Yu
Keyword(s):  
Film Growth ◽  
Diffraction Peak ◽  
Morphological Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Peak Intensity ◽  
Main Diffraction Peak ◽  
Diffraction Peaks ◽  
Si Films ◽  
Sputtering Pressure

Semiconducting Mg2Si films were fabricated on Si (111) substrates by magnetron sputtering and subsequent annealing, and the effects of sputtering pressure on the Mg2Si film growth were studied. The structural and morphological properties of Mg2Si films were investigated by the means of X-ray diffraction (XRD) and scanning electron microscopy (SEM). The results showed that the Mg2Si (220) main diffraction peak intensity increased and then decreased with the increasing of sputtering pressure. The (220) diffraction peak got its maximum at 3.0 Pa sputtering pressure. The intensity of Mg2Si (200) and (400) diffraction peaks increased rapidly as the sputtering pressure decreased when the pressure was lower than 1.5 Pa. The films prepared at higher sputtering pressure had very irregular microstructures, and the surface of semiconducting Mg2Si films became smoother with the decreasing of the sputtering pressure.

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