Reliability characterization of process charging impact on thin gate oxide

2002 ◽  
Author(s):  
Y.-H. Lee ◽  
K. Wu ◽  
G. Sery ◽  
N. Miekle ◽  
W. Lin
Keyword(s):  
Gate Oxide ◽  
Thin Gate Oxide

Characterization of very thin gate-oxide MOS devices

1984 ◽  
Author(s):  
M.-S. Liang ◽  
J.Y. Choi ◽  
P.K. Ko ◽  
C. Hu
Keyword(s):  
Gate Oxide ◽  
Mos Devices ◽  
Thin Gate Oxide

PCA Characterization of Residual Subsurface Damage After Silicon Wafer Mirror Polishing and its Removal

1999 ◽  
Vol 566 ◽  
Author(s):  
Y. Ogita ◽  
K. Kobayashi ◽  
H. Daio
Keyword(s):  
Direct Evidence ◽  
Gate Oxide ◽  
Oxide Thickness ◽  
Mos Devices ◽  
Catching Up ◽  
Gate Oxide Thickness ◽  
Damage Depth ◽  
Thin Gate Oxide ◽  
Straight Lines

Residual subsurface damages introduced by mirror polishing into Si CZ wafers degrade GOI in ULSI MOS devices. A removal of the damage throughout 9 times SC1 cleaning was systematically characterized as correlated between PCA signals measured by noncontact UV/mmwave technique, GOI at 10MV/cm for MOS diodes with a thin gate-oxide thickness of 10nm, surface microroughness Ra measured by AFM. The same characterization was carried out for epitaxial wafers, as reference. Degraded GOI and PCA signal were recovered throughout 3 times SC1 cleaning and did not depend on Ra of 0.1–0.2 nm, which led to that the damage causes the degradation of GOI, but it can be removed by 3 times SC1 cleaning, and the damage depth was about 21nm. Further, the PCA signal well reflects to removal of the damage and degradation of GOI so that it can be a monitor for characterizing the removal and GOI. Direct observation of the damage using OSDA was carried out for the epitaxial wafer polished and SC1 cleaned. The OSDA indicated an image involving straight lines which disappeared after 3 times SC1 cleaning. This gave a direct evidence for catching up it by PCA and existence of residual subsurface damages.

Characterization of tunneling current in ultra-thin gate oxide

2000 ◽  
Vol 44 (9) ◽  
pp. 1523-1531 ◽  
Author(s):  
Andrea Ghetti ◽  
Chun-Ting Liu ◽  
Marco Mastrapasqua ◽  
Enrico Sangiorgi
Keyword(s):  
Tunneling Current ◽  
Gate Oxide ◽  
Thin Gate Oxide
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