Microcrystalline silicon growth using a inductive coupled plasma CVD on plastic substrate

2003 ◽  
Author(s):  
D.Y. Kim ◽  
C.K. Seo ◽  
M.S. Sim ◽  
C.H. Kim ◽  
S.J. Bae ◽  
...  
Keyword(s):  
Plastic Substrate ◽  
Plasma Cvd ◽  
Microcrystalline Silicon ◽  
Silicon Growth

Microcrystalline Silicon Growth: Deposition Rate Limiting Factors

1998 ◽  
Vol 507 ◽  
Author(s):  
S. Hamma ◽  
D. Colliquet ◽  
P. Rocai Cabarrocas
Keyword(s):  
Deposition Rate ◽  
Hydrogen Plasma ◽  
Limiting Factors ◽  
Layer By Layer ◽  
Microcrystalline Silicon ◽  
Glass Substrates ◽  
Hydrogen Dilution ◽  
Corning Glass ◽  
Silicon Growth

ABSTRACTMicrocrystalline silicon films were deposited on corning glass substrates both by the standard hydrogen dilution and the layer-by-layer (LBL) technique. In-situ UV-visible spectroscopic ellipsometry measurements were performed to analyze the evolution of the composition of the films.The change of the hydrogen plasma conditions by increasing the pressure in the LBL process leads to a faster kinetic of crystallization and to an increase of the deposition rate by a factor of two. The increase of the pressure and the decrease of the inter-electrode distance allowed to increase the deposition rate from 0.26 to 3 Å/s in the hydrogen dilution technique. Interestingly enough, the crystalline fraction of the films remains higher than 50%. However, as the deposition rate increases the growth process results in a slower kinetic of crystallization with a long range evolution of the film composition (up to 0.5 νm).

Ion bombardment effects on the microcrystalline silicon growth mechanisms and structure

2002 ◽  
Vol 299-302 ◽  
pp. 63-67 ◽  
Author(s):  
B. Kalache ◽  
A.I. Kosarev ◽  
R. Vanderhaghen ◽  
P. Roca i Cabarrocas
Keyword(s):  
Ion Bombardment ◽  
Growth Mechanisms ◽  
Microcrystalline Silicon ◽  
Silicon Growth

Ion bombardment effects on microcrystalline silicon growth mechanisms and on the film properties

2003 ◽  
Vol 93 (2) ◽  
pp. 1262-1273 ◽  
Author(s):  
B. Kalache ◽  
A. I. Kosarev ◽  
R. Vanderhaghen ◽  
P. Roca i Cabarrocas
Keyword(s):  
Ion Bombardment ◽  
Growth Mechanisms ◽  
Microcrystalline Silicon ◽  
Film Properties ◽  
Silicon Growth

The relationship between $I_{{\rm H}_{\rm \alpha } } /(I_{{\rm SiH}}^* )^2$ and crystalline volume fraction in microcrystalline silicon growth

2010 ◽  
Vol 207 (3) ◽  
pp. 587-590 ◽  
Author(s):  
Jakapan Chantana ◽  
Takuya Higuchi ◽  
Tomoyuki Nagai ◽  
Shota Sasaki ◽  
Yasushi Sobajima ◽  
...  
Keyword(s):  
Volume Fraction ◽  
Crystalline Volume Fraction ◽  
Microcrystalline Silicon ◽  
Silicon Growth ◽  
The Relationship

Long range effects of hydrogen during microcrystalline silicon growth

1997 ◽  
Vol 296 (1-2) ◽  
pp. 11-14 ◽  
Author(s):  
S. Hamma ◽  
P. Roca i Cabarrocas
Keyword(s):  
Long Range ◽  
Microcrystalline Silicon ◽  
Silicon Growth
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