Ion bombardment effects on microcrystalline silicon growth mechanisms and on the film properties

2003 ◽  
Vol 93 (2) ◽  
pp. 1262-1273 ◽  
Author(s):  
B. Kalache ◽  
A. I. Kosarev ◽  
R. Vanderhaghen ◽  
P. Roca i Cabarrocas
Keyword(s):  
Ion Bombardment ◽  
Growth Mechanisms ◽  
Microcrystalline Silicon ◽  
Film Properties ◽  
Silicon Growth

Ion bombardment effects on the microcrystalline silicon growth mechanisms and structure

2002 ◽  
Vol 299-302 ◽  
pp. 63-67 ◽  
Author(s):  
B. Kalache ◽  
A.I. Kosarev ◽  
R. Vanderhaghen ◽  
P. Roca i Cabarrocas
Keyword(s):  
Ion Bombardment ◽  
Growth Mechanisms ◽  
Microcrystalline Silicon ◽  
Silicon Growth

Effects of Ion Bombardment upon Microcrystalline Silicon Growth

2001 ◽  
Vol 80-81 ◽  
pp. 71-76 ◽  
Author(s):  
Billel Kalache ◽  
R. Brenot ◽  
V. Tripathi ◽  
Satyendra Kumar ◽  
R. Vanderhaghen ◽  
...  
Keyword(s):  
Ion Bombardment ◽  
Microcrystalline Silicon ◽  
Silicon Growth

Microcrystalline Silicon Growth: Deposition Rate Limiting Factors

1998 ◽  
Vol 507 ◽  
Author(s):  
S. Hamma ◽  
D. Colliquet ◽  
P. Rocai Cabarrocas
Keyword(s):  
Deposition Rate ◽  
Hydrogen Plasma ◽  
Limiting Factors ◽  
Layer By Layer ◽  
Microcrystalline Silicon ◽  
Glass Substrates ◽  
Hydrogen Dilution ◽  
Corning Glass ◽  
Silicon Growth

ABSTRACTMicrocrystalline silicon films were deposited on corning glass substrates both by the standard hydrogen dilution and the layer-by-layer (LBL) technique. In-situ UV-visible spectroscopic ellipsometry measurements were performed to analyze the evolution of the composition of the films.The change of the hydrogen plasma conditions by increasing the pressure in the LBL process leads to a faster kinetic of crystallization and to an increase of the deposition rate by a factor of two. The increase of the pressure and the decrease of the inter-electrode distance allowed to increase the deposition rate from 0.26 to 3 Å/s in the hydrogen dilution technique. Interestingly enough, the crystalline fraction of the films remains higher than 50%. However, as the deposition rate increases the growth process results in a slower kinetic of crystallization with a long range evolution of the film composition (up to 0.5 νm).

Microcrystalline Silicon Films Produced by RF Magnetron Sputtering and the Effect of Diffrent Ambients on their Conductivity

1989 ◽  
Vol 164 ◽  
Author(s):  
Ratnabali Berjee ◽  
A. K. Bandyopadhyay ◽  
S. N. Sharma ◽  
A. K. Patabyal ◽  
A.K. Barua
Keyword(s):  
Magnetron Sputtering ◽  
Power Density ◽  
Rf Magnetron Sputtering ◽  
Silicon Films ◽  
Critical Parameters ◽  
Rf Power ◽  
Microcrystalline Silicon ◽  
Film Properties

AbstractResults on characterisation of undoped, μc-Si:H films prepared by rf magnetron sputtering technique are presented. Highly conducting films (10−3 Δ−cm−1) were obtained at fairly low rf power density (l.2W/cm2). Critical parameters for obtaining microcrystalline phase were identified. The effect of humid ambient on film properties was looked into.

tudies on Titanium Nitride Coatings - Effect of Ion Bombardment

2000 ◽  
Vol 647 ◽  
Author(s):  
K. Deenamma Vargheese ◽  
G. Mohan Rao
Keyword(s):  
Titanium Nitride ◽  
Electron Cyclotron Resonance ◽  
Film Growth ◽  
Morphological Changes ◽  
Ion Bombardment ◽  
Ion Flux ◽  
Film Properties ◽  
Ion Energy ◽  
Ecr Plasma ◽  
Plasma Sputtering

AbstractIon bombardment during thin film growth is known to cause structural and morphological changes in the deposited films and thus affecting the film properties. These effects can be due to the variation in the bombarding ion flux or their energy. We have deposited titanium nitride films by two distinctly different methods, viz. Electron Cyclotron Resonance (ECR) plasma sputtering and bias assisted reactive magnetron sputtering. The former represents low energy (typically less than 30 eV) but high density plasma (1011cm−3), whereas, in the latter case the ion energy is controlled by varying the bias to the substrate (typically a few hundred volts) but the ion flux is low (109cm−3). The deposited titanium nitride films are characterized for their structure, grain size, surface roughness and electrical resistivity.

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