Correlation between gain and buildup-time fluctuations in ultrafast avalanche photodiodes and its effect on receiver sensitivity

2005 ◽  
Author(s):  
P. Sun ◽  
M.M. Hayat ◽  
J.C. Campbell ◽  
B.E.A. Saleh ◽  
M.C. Teich
Keyword(s):  
Avalanche Photodiodes ◽  
Receiver Sensitivity ◽  
Buildup Time

scholarly journals Breaking the buildup-time limit of sensitivity in avalanche photodiodes by dynamic biasing

2015 ◽  
Vol 23 (18) ◽  
pp. 24035 ◽  
Author(s):  
Majeed M. Hayat ◽  
Payman Zarkesh-Ha ◽  
Georges El-Howayek ◽  
Robert Efroymson ◽  
Joe C. Campbell
Keyword(s):  
Avalanche Photodiodes ◽  
Time Limit ◽  
Dynamic Biasing ◽  
Buildup Time

Avalanche buildup time of silicon avalanche photodiodes

1975 ◽  
Vol 26 (11) ◽  
pp. 642-644 ◽  
Author(s):  
T. Kaneda ◽  
H. Takanashi
Keyword(s):  
Avalanche Photodiodes ◽  
Buildup Time

Avalanche buildup time of InP/InGaAsP/InGaAs avalanche photodiodes with separate absorption, grading, and multiplication regions

1986 ◽  
Vol 22 (6) ◽  
pp. 753-755 ◽  
Author(s):  
Y. Jhee ◽  
J. Campbell ◽  
J. Ferguson ◽  
A. Dentai ◽  
W. Holden
Keyword(s):  
Avalanche Photodiodes ◽  
Buildup Time

Excess-noise and receiver sensitivity measurements of In0.53Ga0.47As/InP avalanche photodiodes

1981 ◽  
Vol 17 (24) ◽  
pp. 917 ◽  
Author(s):  
S.R. Forrest ◽  
G.F. Williams ◽  
O.K. Kim ◽  
R.G. Smith
Keyword(s):  
Avalanche Photodiodes ◽  
Excess Noise ◽  
Receiver Sensitivity

Amorphous Si/SiC phototransistors and avalanche photodiodes

1991 ◽  
Vol 138 (3) ◽  
pp. 226 ◽  
Author(s):  
C.Y. Chang ◽  
J.W. Hong ◽  
Y.K. Fang
Keyword(s):  
Avalanche Photodiodes ◽  
Amorphous Si

Multiple Quantum Barrier Nano-avalanche Photodiodes - Part III: Time and Frequency Responses

2019 ◽  
Vol 9 (2) ◽  
pp. 192-197
Author(s):  
Somrita Ghosh ◽  
Aritra Acharyya
Keyword(s):  
Optical Pulse ◽  
Pulse Current ◽  
Avalanche Photodiodes ◽  
Simulation Method ◽  
Rectangular Pulse ◽  
Operating Conditions ◽  
Multiple Quantum ◽  
Material System ◽  
Frequency Responses ◽  
The Fourier Transform

Background: The time and frequency responses of Multiple Quantum Barrier (MQB) nano-scale Avalanche Photodiodes (APDs) based on Si~3C-SiC material system have been investigated in this final part. Methods: A very narrow rectangular pulse of pulse-width of 0.4 ps has been used as the input optical pulse having 850 nm wavelength incidents on the p+-side of the MQB APD structures and corresponding current responses have been calculated by using a simulation method developed by the authors. Results: Finally the frequency responses of the devices are obtained via the Fourier transform of the corresponding pulse current responses in time domain. Conclusion: Simulation results show that MQB nano-APDs possess significantly faster time response and wider frequency response as compared to the flat Si nano-APDs under similar operating conditions.

InP/InGaAs buried-structure avalanche photodiodes

1984 ◽  
Vol 20 (4) ◽  
pp. 158 ◽  
Author(s):  
K. Yasuda ◽  
Y. Kishi ◽  
T. Shirai ◽  
T. Mikawa ◽  
S. Yamazaki ◽  
...  
Keyword(s):  
Avalanche Photodiodes
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