Avalanche buildup time of silicon avalanche photodiodes

T. Kaneda; H. Takanashi

doi:10.1063/1.88010

Avalanche buildup time of silicon avalanche photodiodes

Applied Physics Letters ◽

10.1063/1.88010 ◽

1975 ◽

Vol 26 (11) ◽

pp. 642-644 ◽

Cited By ~ 16

Author(s):

T. Kaneda ◽

H. Takanashi

Keyword(s):

Avalanche Photodiodes ◽

Buildup Time

Download Full-text

Breaking the buildup-time limit of sensitivity in avalanche photodiodes by dynamic biasing

Optics Express ◽

10.1364/oe.23.024035 ◽

2015 ◽

Vol 23 (18) ◽

pp. 24035 ◽

Cited By ~ 1

Author(s):

Majeed M. Hayat ◽

Payman Zarkesh-Ha ◽

Georges El-Howayek ◽

Robert Efroymson ◽

Joe C. Campbell

Keyword(s):

Avalanche Photodiodes ◽

Time Limit ◽

Dynamic Biasing ◽

Buildup Time

Download Full-text

Avalanche buildup time of InP/InGaAsP/InGaAs avalanche photodiodes with separate absorption, grading, and multiplication regions

IEEE Journal of Quantum Electronics ◽

10.1109/jqe.1986.1073045 ◽

1986 ◽

Vol 22 (6) ◽

pp. 753-755 ◽

Cited By ~ 9

Author(s):

Y. Jhee ◽

J. Campbell ◽

J. Ferguson ◽

A. Dentai ◽

W. Holden

Keyword(s):

Avalanche Photodiodes ◽

Buildup Time

Download Full-text

Correlation between gain and buildup-time fluctuations in ultrafast avalanche photodiodes and its effect on receiver sensitivity

OFC/NFOEC Technical Digest. Optical Fiber Communication Conference, 2005. ◽

10.1109/ofc.2005.192531 ◽

2005 ◽

Author(s):

P. Sun ◽

M.M. Hayat ◽

J.C. Campbell ◽

B.E.A. Saleh ◽

M.C. Teich

Keyword(s):

Avalanche Photodiodes ◽

Receiver Sensitivity ◽

Buildup Time

Download Full-text

High Speed Avalanche Photodiodes Beyond their Traditional Buildup Time

Lasers Congress 2016 (ASSL, LSC, LAC) ◽

10.1364/lsc.2016.lw4b.4 ◽

2016 ◽

Author(s):

M.M. Hayat

Keyword(s):

High Speed ◽

Avalanche Photodiodes ◽

Buildup Time

Download Full-text

Amorphous Si/SiC phototransistors and avalanche photodiodes

IEE Proceedings J Optoelectronics ◽

10.1049/ip-j.1991.0040 ◽

1991 ◽

Vol 138 (3) ◽

pp. 226 ◽

Cited By ~ 1

Author(s):

C.Y. Chang ◽

J.W. Hong ◽

Y.K. Fang

Keyword(s):

Avalanche Photodiodes ◽

Amorphous Si

Download Full-text

Harmonized system of quality assessment for electronic components. Semiconductor devices. Optoelectronic devices. Blank detail specification for avalanche photodiodes (APDs) with/without pigtail, for fibre optic systems or subsystems

10.3403/01126847 ◽

1997 ◽

Keyword(s):

Quality Assessment ◽

Semiconductor Devices ◽

Avalanche Photodiodes ◽

Optoelectronic Devices ◽

Fibre Optic ◽

Electronic Components ◽

Optic Systems

Download Full-text

Multiple Quantum Barrier Nano-avalanche Photodiodes - Part III: Time and Frequency Responses

Nanoscience &Nanotechnology-Asia ◽

10.2174/2210681208666180813122642 ◽

2019 ◽

Vol 9 (2) ◽

pp. 192-197

Author(s):

Somrita Ghosh ◽

Aritra Acharyya

Keyword(s):

Optical Pulse ◽

Pulse Current ◽

Avalanche Photodiodes ◽

Simulation Method ◽

Rectangular Pulse ◽

Operating Conditions ◽

Multiple Quantum ◽

Material System ◽

Frequency Responses ◽

The Fourier Transform

Background: The time and frequency responses of Multiple Quantum Barrier (MQB) nano-scale Avalanche Photodiodes (APDs) based on Si~3C-SiC material system have been investigated in this final part. Methods: A very narrow rectangular pulse of pulse-width of 0.4 ps has been used as the input optical pulse having 850 nm wavelength incidents on the p+-side of the MQB APD structures and corresponding current responses have been calculated by using a simulation method developed by the authors. Results: Finally the frequency responses of the devices are obtained via the Fourier transform of the corresponding pulse current responses in time domain. Conclusion: Simulation results show that MQB nano-APDs possess significantly faster time response and wider frequency response as compared to the flat Si nano-APDs under similar operating conditions.

Download Full-text