Nonlinear distortions and excess noise behavior of fused InGaAs/Si avalanche photodiode

2002 ◽  
Author(s):  
Kang ◽  
Mages ◽  
Clawson ◽  
Pauchard ◽  
Hummel ◽  
...  
Keyword(s):  
Avalanche Photodiode ◽  
Excess Noise ◽  
Nonlinear Distortions

AlGaSb avalanche photodiode exhibiting a very low excess noise factor

1989 ◽  
Vol 54 (24) ◽  
pp. 2422-2423 ◽  
Author(s):  
S. Miura ◽  
T. Mikawa ◽  
H. Kuwatsuka ◽  
N. Yasuoka ◽  
T. Tanahashi ◽  
...  
Keyword(s):  
Avalanche Photodiode ◽  
Noise Factor ◽  
Excess Noise ◽  
Excess Noise Factor

Avalanche photodiode punch-through gain determination through excess noise analysis

2009 ◽  
Vol 106 (6) ◽  
pp. 064507 ◽  
Author(s):  
Han-Din Liu ◽  
Huapu Pan ◽  
Chong Hu ◽  
Dion McIntosh ◽  
Zhiwen Lu ◽  
...  
Keyword(s):  
Noise Analysis ◽  
Avalanche Photodiode ◽  
Excess Noise

Infrared Avalanche Photodiode Detectors

2017 ◽  
Vol 67 (2) ◽  
pp. 159 ◽  
Author(s):  
Anand Singh ◽  
Ravinder Pal
Keyword(s):  
Avalanche Photodiode ◽  
Fast Response ◽  
Optical Signal ◽  
Excess Noise ◽  
Space Applications ◽  
High Quantum Efficiency ◽  
Avalanche Gain ◽  
Internal Gain ◽  
The Status ◽  
Combined Solution

This study presents on the design, fabrication and characteristics of HgCdTe mid-wave infrared avalanche photodiode (MWIR APD). The gain of 800 at - 8 V bias is measured in n+-ν-p+ detector array with pitch size of 30 μm. The gain independent bandwidth of 6 MHz is achieved in the fabricated device. This paper also covers the status of HgCdTe and III-V material based IR-APD technology. These APDs having high internal gain and bandwidth are suitable for the detection of attenuated optical signals such as in the battle field conditions/long range imaging in defence and space applications. It provides a combined solution for both detection and amplification if the detector receives a very weak optical signal. HgCdTe based APDs provide high avalanche gain with low excess noise, high quantum efficiency, low dark current and fast response time.

scholarly journals Multi-Gain-Stage InGaAs Avalanche Photodiode With Enhanced Gain and Reduced Excess Noise

2013 ◽  
Vol 1 (2) ◽  
pp. 54-65 ◽  
Author(s):  
George M. Williams ◽  
Madison Compton ◽  
David A. Ramirez ◽  
Majeed M. Hayat ◽  
Andrew S. Huntington
Keyword(s):  
Avalanche Photodiode ◽  
Excess Noise ◽  
Gain Stage

A Novel Structure of a-SiN:H/a-Si:H Multilayer Avalanche Photodiode (MAPD)

1993 ◽  
Vol 297 ◽  
Author(s):  
Jiao Lihong ◽  
Meng Zhiguo ◽  
Sun Zhonglin
Keyword(s):  
Reverse Bias ◽  
Impact Ionization ◽  
Incident Light ◽  
Avalanche Photodiode ◽  
Low Noise ◽  
Excess Noise ◽  
Novel Structure ◽  
Ito Glass ◽  
Noise Factors ◽  
The Impact

Because of the lower density of interface states in a-Si:H/a-SiN:H than that in a-Si:H/a-SiC:H, an a-Si:H/a-SiN multilayer reach-through avalanche photodiode is fabricated on an ITO/glass substrate by plasma-enhanced chemical vapor deposition (PECVD) . In order to improve the performance of the a-Si:H/a-SiN:H APD'S, a novel structure is used. By controlling the deposition ratio of silicon and nitrogen of amorphous SiN,the valence band top of a-Si:H is deeper than that of a-SiN:H, that is, the a-Si :H/a-SiN: H system has the electron potential well in a-Si:H, while the hole well is in a-SiN:H, thus we can successfully suppress the hole impact ionization, correspondingly enhance the electron impact ionization effectively.The measurement of current versus voltage is employed to study the multiplication factors and the impact ionization coefficients. The characteristics of a-Si:H/a-SiN:H APD's,such as I-V curves, optical gains, impact ionization rates, excess noise factors, the relative response and the relationship between the breakdown voltage and wavelength, are studied. The electron multiplication factor is Mc=4.5 at reverse bias V=12v. An optical gain of 3.7 at reverse bias VR=12v and an incident light power Pin=3μw is obtained. Homo junction a-Si:H reach-through APD's and homojunction a-Si:H APD's are also fabricated for comparison.The results show that the novel a-Si:H/a-SiN:H APD's is promising in high-gain, low-noise photodetectors.

High gain and low excess noise InGaAs/InP avalanche photodiode with lateral impact ionization

2020 ◽  
Vol 59 (7) ◽  
pp. 1980 ◽  
Author(s):  
Runqi Wang ◽  
Yang Tian ◽  
Qian Li ◽  
Yanli Zhao
Keyword(s):  
Impact Ionization ◽  
Avalanche Photodiode ◽  
High Gain ◽  
Excess Noise ◽  
Lateral Impact

scholarly journals Modeling the e-APD SAPHIRA/C-RED ONE camera at low flux level

2019 ◽  
Vol 625 ◽  
pp. A38
Author(s):  
C. Lanthermann ◽  
N. Anugu ◽  
J.-B. Le Bouquin ◽  
J. D. Monnier ◽  
S. Kraus ◽  
...  
Keyword(s):  
Near Infrared ◽  
Avalanche Photodiode ◽  
Noise Factor ◽  
Excess Noise ◽  
Excess Noise Factor ◽  
Total Transmission ◽  
Avalanche Gain ◽  
Flux Level ◽  
Readout Noise ◽  
Infrared Interferometry

Context. We implement an electron avalanche photodiode (e-APD) in the MIRC-X instrument, which is an upgrade of the six-telescope near-infrared imager MIRC, at the CHARA array. This technology should improve the sensitivity of near-infrared interferometry. Aims. We aim to characterize a near-infrared C-RED ONE camera from First Light Imaging (FLI) using an e-APD from Leonardo (previously SELEX). Methods. We first used the classical mean-variance analysis to measure the system gain and the amplification gain. We then developed a physical model of the statistical distribution of the camera output signal. This model is based on multiple convolutions of the Poisson statistic, the intrinsic avalanche gain distribution, and the observed distribution of the background signal. At low flux level, this model independently constrains the incident illumination level, the total gain, and the excess noise factor of the amplification. Results. We measure a total transmission of 48 ± 3% including the cold filter and the Quantum Efficiency. We measure a system gain of 0.49 ADU/e, a readout noise of 10 ADU, and amplification gains as high as 200. These results are consistent between the two methods and therefore validate our modeling approach. The measured excess noise factor based on the modeling is 1.47 ± 0.03, with no obvious dependency with flux level or amplification gain. Conclusions. The presented model allows the characteristics of the e-APD array to be measured at low flux level independently of a preexisting calibration. With < 0.3 electron equivalent readout noise at kilohertz frame rates, we confirm the revolutionary performances of the camera with respect to the PICNIC or HAWAII technologies. However, the measured excess noise factor is significantly higher than what is claimed in the literature (< 1.25), and explains why counting multiple photons remains challenging with this camera.

An AlGaSb avalanche photodiode exhibiting low excess noise factor

2003 ◽  
Author(s):  
T. Mikawa ◽  
S. Miura ◽  
H. Kuwatsuka ◽  
N. Yasuoka ◽  
T. Tanahashi ◽  
...  
Keyword(s):  
Avalanche Photodiode ◽  
Noise Factor ◽  
Excess Noise ◽  
Excess Noise Factor
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