Infrared Avalanche Photodiode Detectors

2017 ◽  
Vol 67 (2) ◽  
pp. 159 ◽  
Author(s):  
Anand Singh ◽  
Ravinder Pal
Keyword(s):  
Avalanche Photodiode ◽  
Fast Response ◽  
Optical Signal ◽  
Excess Noise ◽  
Space Applications ◽  
High Quantum Efficiency ◽  
Avalanche Gain ◽  
Internal Gain ◽  
The Status ◽  
Combined Solution

This study presents on the design, fabrication and characteristics of HgCdTe mid-wave infrared avalanche photodiode (MWIR APD). The gain of 800 at - 8 V bias is measured in n+-ν-p+ detector array with pitch size of 30 μm. The gain independent bandwidth of 6 MHz is achieved in the fabricated device. This paper also covers the status of HgCdTe and III-V material based IR-APD technology. These APDs having high internal gain and bandwidth are suitable for the detection of attenuated optical signals such as in the battle field conditions/long range imaging in defence and space applications. It provides a combined solution for both detection and amplification if the detector receives a very weak optical signal. HgCdTe based APDs provide high avalanche gain with low excess noise, high quantum efficiency, low dark current and fast response time.

scholarly journals Modeling the e-APD SAPHIRA/C-RED ONE camera at low flux level

2019 ◽  
Vol 625 ◽  
pp. A38
Author(s):  
C. Lanthermann ◽  
N. Anugu ◽  
J.-B. Le Bouquin ◽  
J. D. Monnier ◽  
S. Kraus ◽  
...  
Keyword(s):  
Near Infrared ◽  
Avalanche Photodiode ◽  
Noise Factor ◽  
Excess Noise ◽  
Excess Noise Factor ◽  
Total Transmission ◽  
Avalanche Gain ◽  
Flux Level ◽  
Readout Noise ◽  
Infrared Interferometry

Context. We implement an electron avalanche photodiode (e-APD) in the MIRC-X instrument, which is an upgrade of the six-telescope near-infrared imager MIRC, at the CHARA array. This technology should improve the sensitivity of near-infrared interferometry. Aims. We aim to characterize a near-infrared C-RED ONE camera from First Light Imaging (FLI) using an e-APD from Leonardo (previously SELEX). Methods. We first used the classical mean-variance analysis to measure the system gain and the amplification gain. We then developed a physical model of the statistical distribution of the camera output signal. This model is based on multiple convolutions of the Poisson statistic, the intrinsic avalanche gain distribution, and the observed distribution of the background signal. At low flux level, this model independently constrains the incident illumination level, the total gain, and the excess noise factor of the amplification. Results. We measure a total transmission of 48 ± 3% including the cold filter and the Quantum Efficiency. We measure a system gain of 0.49 ADU/e, a readout noise of 10 ADU, and amplification gains as high as 200. These results are consistent between the two methods and therefore validate our modeling approach. The measured excess noise factor based on the modeling is 1.47 ± 0.03, with no obvious dependency with flux level or amplification gain. Conclusions. The presented model allows the characteristics of the e-APD array to be measured at low flux level independently of a preexisting calibration. With < 0.3 electron equivalent readout noise at kilohertz frame rates, we confirm the revolutionary performances of the camera with respect to the PICNIC or HAWAII technologies. However, the measured excess noise factor is significantly higher than what is claimed in the literature (< 1.25), and explains why counting multiple photons remains challenging with this camera.

scholarly journals Characterization of Impact Ionization Coefficient of ZnO Based on a p-Si/i-ZnO/n-AZO Avalanche Photodiode

Micromachines ◽  
2020 ◽  
Vol 11 (8) ◽  
pp. 740
Author(s):  
Gaoming Li ◽  
Xiaolong Zhao ◽  
Xiangwei Jia ◽  
Shuangqing Li ◽  
Yongning He
Keyword(s):  
High Performance ◽  
Impact Ionization ◽  
Single Photon ◽  
Wide Band ◽  
Avalanche Photodiode ◽  
Excess Noise ◽  
Single Photon Detection ◽  
Avalanche Gain ◽  
Ionization Coefficients ◽  
The Impact

The avalanche photodiode is a highly sensitive photon detector with wide applications in optical communication and single photon detection. ZnO is a promising wide band gap material to realize a UV avalanche photodiode (APD). However, the lack of p-type doping, the strong self-compensation effect, and the scarcity of data on the ionization coefficients restrain the development and application of ZnO APD. Furthermore, ZnO APD has been seldom reported before. In this work, we employed a p-Si/i-ZnO/n-AZO structure to successfully realize electron avalanche multiplication. Based on this structure, we investigated the band structure, field profile, Current–Voltage (I-V) characteristics, and avalanche gain. To examine the influence of the width of the i-ZnO layer on the performance, we changed the i-ZnO layer thickness to 250, 500, and 750 nm. The measured breakdown voltages agree well with the corresponding threshold electric field strengths that we calculated. The agreement between the experimental data and calculated results supports our analysis. Finally, we provide data on the impact ionization coefficients of electrons for ZnO along the (001) direction, which is of great significance in designing high-performance low excess noise ZnO APD. Our work lays a foundation to realize a high-performance ZnO-based avalanche device.

scholarly journals Small All-Range Lidar for Asteroid and Comet Core Missions

Sensors ◽  
2021 ◽  
Vol 21 (9) ◽  
pp. 3081
Author(s):  
Xiaoli Sun ◽  
Daniel R. Cremons ◽  
Erwan Mazarico ◽  
Guangning Yang ◽  
James B. Abshire ◽  
...  
Keyword(s):  
Fiber Lasers ◽  
Dynamic Range ◽  
Photon Counting ◽  
Avalanche Photodiode ◽  
Integration Time ◽  
Sample Collection ◽  
Long Distance ◽  
Linear Mode ◽  
Internal Gain ◽  
Pseudo Noise

We report the development of a new type of space lidar specifically designed for missions to small planetary bodies for both topographic mapping and support of sample collection or landing. The instrument is designed to have a wide dynamic range with several operation modes for different mission phases. The laser transmitter consists of a fiber laser that is intensity modulated with a return-to-zero pseudo-noise (RZPN) code. The receiver detects the coded pulse-train by correlating the detected signal with the RZPN kernel. Unlike regular pseudo noise (PN) lidars, the RZPN kernel is set to zero outside laser firing windows, which removes most of the background noise over the receiver integration time. This technique enables the use of low peak-power but high pulse-rate lasers, such as fiber lasers, for long-distance ranging without aliasing. The laser power and the internal gain of the detector can both be adjusted to give a wide measurement dynamic range. The laser modulation code pattern can also be reconfigured in orbit to optimize measurements to different measurement environments. The receiver uses a multi-pixel linear mode photon-counting HgCdTe avalanche photodiode (APD) array with near quantum limited sensitivity at near to mid infrared wavelengths where many fiber lasers and diode lasers operate. The instrument is modular and versatile and can be built mostly with components developed by the optical communication industry.

A novel SWIR detector with an ultra-high internal gain and negligible excess noise

2007 ◽  
Author(s):  
H. Mohseni ◽  
O. G. Memis ◽  
S. C. Kong ◽  
A. Katsnelson ◽  
W. Wu
Keyword(s):  
Excess Noise ◽  
Internal Gain

High performance MoO3−x/Si heterojunction photodetectors with nanoporous pyramid Si arrays for visible light communication application

2019 ◽  
Vol 7 (4) ◽  
pp. 917-925 ◽  
Author(s):  
Yujin Liu ◽  
Guobiao Cen ◽  
Gai Wang ◽  
Junwei Huang ◽  
Suhang Zhou ◽  
...  
Keyword(s):  
Visible Light ◽  
Communication System ◽  
High Performance ◽  
Visible Light Communication ◽  
Fast Response ◽  
Optical Signal ◽  
Self Powered

Self-powered, fast-response heterojunction photodetectors based on nanoporous pyramid Si arrays are successfully developed. The photodetector is further integrated into a visible light communication system as an optical signal receiver.

scholarly journals A 45 nm CMOS Avalanche Photodiode with 8.4-GHz Bandwidth

Micromachines ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 65
Author(s):  
Wenhao Zhi ◽  
Qingxiao Quan ◽  
Pingping Yu ◽  
Yanfeng Jiang
Keyword(s):  
Optical Communication ◽  
Integrated Circuit ◽  
Communication Systems ◽  
Complementary Metal Oxide Semiconductor ◽  
Avalanche Photodiode ◽  
Cmos Technology ◽  
Optical Signal ◽  
Oxide Semiconductor ◽  
Monolithically Integrated ◽  
Process Modification

Photodiode is one of the key components in optoelectronic technology, which is used to convert optical signal into electrical ones in modern communication systems. In this paper, an avalanche photodiode (APD) is designed and fulfilled, which is compatible with Taiwan Semiconductor Manufacturing Company (TSMC) 45-nm standard complementary metal–oxide–semiconductor (CMOS) technology without any process modification. The APD based on 45 nm process is beneficial to realize a smaller and more complex monolithically integrated optoelectronic chip. The fabricated CMOS APD operates at 850 nm wavelength optical communication. Its bandwidth can be as high as 8.4 GHz with 0.56 A/W responsivity at reverse bias of 20.8 V. Its active area is designed to be 20 × 20 μm2. The Simulation Program with Integrated Circuit Emphasis (SPICE) model of the APD is also proposed and verified. The key parameters are extracted based on its electrical, optical and frequency responses by parameter fitting. The device has wide potential application for optical communication systems.

AlGaSb avalanche photodiode exhibiting a very low excess noise factor

1989 ◽  
Vol 54 (24) ◽  
pp. 2422-2423 ◽  
Author(s):  
S. Miura ◽  
T. Mikawa ◽  
H. Kuwatsuka ◽  
N. Yasuoka ◽  
T. Tanahashi ◽  
...  
Keyword(s):  
Avalanche Photodiode ◽  
Noise Factor ◽  
Excess Noise ◽  
Excess Noise Factor
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