High gain and low excess noise InGaAs/InP avalanche photodiode with lateral impact ionization

2020 ◽  
Vol 59 (7) ◽  
pp. 1980 ◽  
Author(s):  
Runqi Wang ◽  
Yang Tian ◽  
Qian Li ◽  
Yanli Zhao
Keyword(s):  
Impact Ionization ◽  
Avalanche Photodiode ◽  
High Gain ◽  
Excess Noise ◽  
Lateral Impact

Improved dual-carrier high gain impact ionization engineered avalanche photodiode

2012 ◽  
Author(s):  
Jun Huang ◽  
Koushik Banerjee ◽  
Siddhartha Ghosh ◽  
Majeed M. Hayat
Keyword(s):  
Impact Ionization ◽  
Avalanche Photodiode ◽  
High Gain

A Novel Structure of a-SiN:H/a-Si:H Multilayer Avalanche Photodiode (MAPD)

1993 ◽  
Vol 297 ◽  
Author(s):  
Jiao Lihong ◽  
Meng Zhiguo ◽  
Sun Zhonglin
Keyword(s):  
Reverse Bias ◽  
Impact Ionization ◽  
Incident Light ◽  
Avalanche Photodiode ◽  
Low Noise ◽  
Excess Noise ◽  
Novel Structure ◽  
Ito Glass ◽  
Noise Factors ◽  
The Impact

Because of the lower density of interface states in a-Si:H/a-SiN:H than that in a-Si:H/a-SiC:H, an a-Si:H/a-SiN multilayer reach-through avalanche photodiode is fabricated on an ITO/glass substrate by plasma-enhanced chemical vapor deposition (PECVD) . In order to improve the performance of the a-Si:H/a-SiN:H APD'S, a novel structure is used. By controlling the deposition ratio of silicon and nitrogen of amorphous SiN,the valence band top of a-Si:H is deeper than that of a-SiN:H, that is, the a-Si :H/a-SiN: H system has the electron potential well in a-Si:H, while the hole well is in a-SiN:H, thus we can successfully suppress the hole impact ionization, correspondingly enhance the electron impact ionization effectively.The measurement of current versus voltage is employed to study the multiplication factors and the impact ionization coefficients. The characteristics of a-Si:H/a-SiN:H APD's,such as I-V curves, optical gains, impact ionization rates, excess noise factors, the relative response and the relationship between the breakdown voltage and wavelength, are studied. The electron multiplication factor is Mc=4.5 at reverse bias V=12v. An optical gain of 3.7 at reverse bias VR=12v and an incident light power Pin=3μw is obtained. Homo junction a-Si:H reach-through APD's and homojunction a-Si:H APD's are also fabricated for comparison.The results show that the novel a-Si:H/a-SiN:H APD's is promising in high-gain, low-noise photodetectors.

scholarly journals Characterization of Impact Ionization Coefficient of ZnO Based on a p-Si/i-ZnO/n-AZO Avalanche Photodiode

Micromachines ◽  
2020 ◽  
Vol 11 (8) ◽  
pp. 740
Author(s):  
Gaoming Li ◽  
Xiaolong Zhao ◽  
Xiangwei Jia ◽  
Shuangqing Li ◽  
Yongning He
Keyword(s):  
High Performance ◽  
Impact Ionization ◽  
Single Photon ◽  
Wide Band ◽  
Avalanche Photodiode ◽  
Excess Noise ◽  
Single Photon Detection ◽  
Avalanche Gain ◽  
Ionization Coefficients ◽  
The Impact

The avalanche photodiode is a highly sensitive photon detector with wide applications in optical communication and single photon detection. ZnO is a promising wide band gap material to realize a UV avalanche photodiode (APD). However, the lack of p-type doping, the strong self-compensation effect, and the scarcity of data on the ionization coefficients restrain the development and application of ZnO APD. Furthermore, ZnO APD has been seldom reported before. In this work, we employed a p-Si/i-ZnO/n-AZO structure to successfully realize electron avalanche multiplication. Based on this structure, we investigated the band structure, field profile, Current–Voltage (I-V) characteristics, and avalanche gain. To examine the influence of the width of the i-ZnO layer on the performance, we changed the i-ZnO layer thickness to 250, 500, and 750 nm. The measured breakdown voltages agree well with the corresponding threshold electric field strengths that we calculated. The agreement between the experimental data and calculated results supports our analysis. Finally, we provide data on the impact ionization coefficients of electrons for ZnO along the (001) direction, which is of great significance in designing high-performance low excess noise ZnO APD. Our work lays a foundation to realize a high-performance ZnO-based avalanche device.

Photon detection with high gain avalanche photodiode arrays

1998 ◽  
Vol 45 (3) ◽  
pp. 720-723 ◽  
Author(s):  
S. Vasile ◽  
P. Gothoskar ◽  
R. Farrell ◽  
D. Sdrulla
Keyword(s):  
Avalanche Photodiode ◽  
High Gain ◽  
Photon Detection ◽  
Photodiode Arrays

AlGaSb avalanche photodiode exhibiting a very low excess noise factor

1989 ◽  
Vol 54 (24) ◽  
pp. 2422-2423 ◽  
Author(s):  
S. Miura ◽  
T. Mikawa ◽  
H. Kuwatsuka ◽  
N. Yasuoka ◽  
T. Tanahashi ◽  
...  
Keyword(s):  
Avalanche Photodiode ◽  
Noise Factor ◽  
Excess Noise ◽  
Excess Noise Factor
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