Hierarchical sector biasing organization for flash memories

2002 ◽  
Author(s):  
R. Micheloni ◽  
M. Zammattio ◽  
G. Campardo ◽  
O. Khouri ◽  
G. Torelli
Keyword(s):  
Flash Memories

Analyzing the Impact of X-Ray Tomography on the Reliability of Integrated Circuits

2015 ◽  
Author(s):  
Halit Dogan ◽  
Md Mahbub Alam ◽  
Navid Asadizanjani ◽  
Sina Shahbazmohamadi ◽  
Domenic Forte ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
3D Imaging ◽  
Three Dimensional ◽  
Serial Sectioning ◽  
Promising Technique ◽  
Flash Memories ◽  
X Ray ◽  
3D Information ◽  
The Impact

Abstract X-ray tomography is a promising technique that can provide micron level, internal structure, and three dimensional (3D) information of an integrated circuit (IC) component without the need for serial sectioning or decapsulation. This is especially useful for counterfeit IC detection as demonstrated by recent work. Although the components remain physically intact during tomography, the effect of radiation on the electrical functionality is not yet fully investigated. In this paper we analyze the impact of X-ray tomography on the reliability of ICs with different fabrication technologies. We perform a 3D imaging using an advanced X-ray machine on Intel flash memories, Macronix flash memories, Xilinx Spartan 3 and Spartan 6 FPGAs. Electrical functionalities are then tested in a systematic procedure after each round of tomography to estimate the impact of X-ray on Flash erase time, read margin, and program operation, and the frequencies of ring oscillators in the FPGAs. A major finding is that erase times for flash memories of older technology are significantly degraded when exposed to tomography, eventually resulting in failure. However, the flash and Xilinx FPGAs of newer technologies seem less sensitive to tomography, as only minor degradations are observed. Further, we did not identify permanent failures for any chips in the time needed to perform tomography for counterfeit detection (approximately 2 hours).

Humidity reliability of commercial flash memories for long-term storage

2020 ◽  
Vol 59 (SL) ◽  
pp. SLLC01 ◽  
Author(s):  
Tomoki Murota ◽  
Toshiki Mimura ◽  
Ploybussara Gomasang ◽  
Shinji Yokogawa ◽  
Kazuyoshi Ueno
Keyword(s):  
Flash Memories ◽  
Long Term Storage ◽  
Term Storage

A Heavy-ion Beam Monitor Based on 3D NAND Flash Memories

2021 ◽  
pp. 1-1
Author(s):  
S. Gerardin ◽  
M. Bagatin ◽  
A. Paccagnella ◽  
S. Beltrami ◽  
A. Costantino ◽  
...  
Keyword(s):  
Ion Beam ◽  
Heavy Ion ◽  
Nand Flash ◽  
Flash Memories ◽  
Beam Monitor ◽  
Heavy Ion Beam

A new erasing and row decoding scheme for low supply voltage operation 16-Mb/64-Mb flash memories

1992 ◽  
Vol 27 (4) ◽  
pp. 583-588 ◽  
Author(s):  
Y. Miyawaki ◽  
T. Nakayama ◽  
S. Kobayashi ◽  
N. Ajika ◽  
M. Ohi ◽  
...  
Keyword(s):  
Supply Voltage ◽  
Flash Memories ◽  
Low Supply Voltage

Scaling trends for random telegraph noise in deca-nanometer Flash memories

2008 ◽  
Author(s):  
A. Ghetti ◽  
C. Monzio Compagnoni ◽  
F. Biancardi ◽  
A. L. Lacaita ◽  
S. Beltrami ◽  
...  
Keyword(s):  
Flash Memories ◽  
Random Telegraph Noise ◽  
Telegraph Noise
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