In-line channel power monitor based on helium ion implantation in silicon-on-insulator waveguides

2006 ◽  
Vol 18 (17) ◽  
pp. 1882-1884 ◽  
Author(s):  
Y. Liu ◽  
C.W. Cho ◽  
W.Y. Cheung ◽  
H.K. Tsang
Keyword(s):  
Ion Implantation ◽  
Silicon On Insulator ◽  
Channel Power ◽  
Helium Ion

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

TEM study of buried cobalt disilicide layers formed by ion implantation: Identification of cobalt monosilicide inclusions

1990 ◽  
Vol 48 (4) ◽  
pp. 576-577
Author(s):  
A. De Veirman ◽  
J. Van Landuyt ◽  
K.J. Reeson ◽  
R. Gwilliam ◽  
C. Jeynes ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Annealing Treatment ◽  
Silicon On Insulator ◽  
High Dose ◽  
Nitrogen Flow ◽  
Cobalt Disilicide ◽  
Transmission Electron ◽  
Beam Heating ◽  
Co Concentration ◽  
Silicon On Insulator Technology

In analogy to the formation of SIMOX (Separation by IMplanted OXygen) material which is presently the most promising silicon-on-insulator technology, high-dose ion implantation of cobalt in silicon is used to synthesise buried CoSi2 layers. So far, for high-dose ion implantation of Co in Si, only formation of CoSi2 is reported. In this paper it will be shown that CoSi inclusions occur when the stoichiometric Co concentration is exceeded at the peak of the Co distribution. 350 keV Co+ ions are implanted into (001) Si wafers to doses of 2, 4 and 7×l017 per cm2. During the implantation the wafer is kept at ≈ 550°C, using beam heating. The subsequent annealing treatment was performed in a conventional nitrogen flow furnace at 1000°C for 5 to 30 minutes (FA) or in a dual graphite strip annealer where isochronal 5s anneals at temperatures between 800°C and 1200°C (RTA) were performed. The implanted samples have been studied by means of Rutherford Backscattering Spectroscopy (RBS) and cross-section Transmission Electron Microscopy (XTEM).

Membrane folding by helium ion implantation for three-dimensional device fabrication

2007 ◽  
Vol 25 (6) ◽  
pp. 2184 ◽  
Author(s):  
William J. Arora ◽  
Sybren Sijbrandij ◽  
Lewis Stern ◽  
John Notte ◽  
Henry I. Smith ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Three Dimensional ◽  
Device Fabrication ◽  
Helium Ion

Synthesis of Buried Silicon Compounds Using Ion Implantation

1988 ◽  
Vol 100 ◽  
Author(s):  
Alice E. White ◽  
K. T. Short ◽  
R. C. Dynes ◽  
J. M. Gibson ◽  
R. Hull
Keyword(s):  
Ion Implantation ◽  
Surface Damage ◽  
Silicon On Insulator ◽  
High Current ◽  
New Materials ◽  
Compound Formation ◽  
Silicon Compounds ◽  
Mechanisms Of Formation ◽  
New Generation ◽  
Substrate Temperatures

ABSTRACTIon implantation is widely used for doping semiconductors at low concentration, but, with the advent of a new generation of high current implanters, synthesizing new materials rather that simply doping them has become feasible. This technique has been successfully applied to fabricating silicon-on-insulator (SOI) structures with oxygen and nitrogen for several years. Since we are interested in understanding the mechanisms of formation of these layers, we have concentrated on sub-stoichiometric implantation doses of oxygen where it is easier to observe the coalescing layer. In order to determine whether this process of compound formation is more general, our studies were expanded to include implantation of the transition metals. Here, elevated substrate temperatures are necessary to minimize Si surface damage. The resulting disilicide layers are of remarkably high quality: they are single crystals in registry with the silicon wafer and they have better residual resistivities than comparable UHV-reacted silicides.

Numerical study of silicon vacancy color centers in silicon carbide by helium ion implantation and subsequent annealing

2021 ◽  
Author(s):  
Yexin Fan ◽  
ying song ◽  
zongwei xu ◽  
jintong wu ◽  
rui zhu ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ion Implantation ◽  
Color Center ◽  
Md Simulation ◽  
Subsequent Annealing ◽  
Atomic Scale ◽  
New Method ◽  
Color Centers ◽  
Silicon Vacancy ◽  
Helium Ion

Abstract Molecular dynamics (MD) simulation is adopted to discover the underlying mechanism of silicon vacancy color center and damage evolution during helium ions implanted four-hexagonal silicon carbide (4H-SiC) and subsequent annealing. The atomic-scale mechanism of silicon vacancy color centers in the process of He ion implantation into 4H-SiC can be described more accurately by incorporating electron stopping power for He ion implantation. We present a new method for calculating the silicon vacancy color center numerically, which considers the structure around the color center and makes the statistical results more accurate than the Wigner-Seitz defect analysis method. At the same time, photoluminescence (PL) spectroscopy of silicon vacancy color center under different helium ion doses is also characterized for validating the numerical analysis. The MD simulation of the optimal annealing temperature of silicon vacancy color center is predicted by the proposed new method.

Microstructure of electrodeposited tungsten coatings after 30 keV helium ion implantation

2019 ◽  
Vol 144 ◽  
pp. 164-171
Author(s):  
Ningbo Sun ◽  
Shaoting Lang ◽  
Yingchun Zhang
Keyword(s):  
Ion Implantation ◽  
Helium Ion

Radiation hardness improvement of separation-by-implantation-of-oxygen/silicon-on-insulator material by nitrogen ion implantation

2005 ◽  
Vol 34 (11) ◽  
pp. L53-L56 ◽  
Author(s):  
Enxia Zhang ◽  
Jiayin Sun ◽  
Jing Chen ◽  
Zhengxuan Zhang ◽  
Xi Wang ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Radiation Hardness ◽  
Silicon On Insulator ◽  
Nitrogen Ion Implantation ◽  
Nitrogen Ion

Irradiation hardening of pure vanadium and vanadium alloys due to helium ion implantation and displacement damage

2020 ◽  
Vol 540 ◽  
pp. 152381
Author(s):  
Yitao Yang ◽  
Tingxing Yan ◽  
Chonghong Zhang ◽  
Xin Fu ◽  
Tongda Ma ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Displacement Damage ◽  
Vanadium Alloys ◽  
Irradiation Hardening ◽  
Helium Ion
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