Membrane folding by helium ion implantation for three-dimensional device fabrication

2007 ◽  
Vol 25 (6) ◽  
pp. 2184 ◽  
Author(s):  
William J. Arora ◽  
Sybren Sijbrandij ◽  
Lewis Stern ◽  
John Notte ◽  
Henry I. Smith ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Three Dimensional ◽  
Device Fabrication ◽  
Helium Ion

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

scholarly journals Assembly of multicomponent structures from hundreds of micron-scale building blocks using optical tweezers

2021 ◽  
Vol 7 (1) ◽  
Author(s):  
Jeffrey E. Melzer ◽  
Euan McLeod
Keyword(s):  
Optical Tweezers ◽  
Three Dimensional ◽  
Building Blocks ◽  
Optical Tweezer ◽  
Device Fabrication ◽  
Positional Accuracy ◽  
Component Structure ◽  
Material Development ◽  
Critical Process Parameters ◽  
Optical Positioning

AbstractThe fabrication of three-dimensional (3D) microscale structures is critical for many applications, including strong and lightweight material development, medical device fabrication, microrobotics, and photonic applications. While 3D microfabrication has seen progress over the past decades, complex multicomponent integration with small or hierarchical feature sizes is still a challenge. In this study, an optical positioning and linking (OPAL) platform based on optical tweezers is used to precisely fabricate 3D microstructures from two types of micron-scale building blocks linked by biochemical interactions. A computer-controlled interface with rapid on-the-fly automated recalibration routines maintains accuracy even after placing many building blocks. OPAL achieves a 60-nm positional accuracy by optimizing the molecular functionalization and laser power. A two-component structure consisting of 448 1-µm building blocks is assembled, representing the largest number of building blocks used to date in 3D optical tweezer microassembly. Although optical tweezers have previously been used for microfabrication, those results were generally restricted to single-material structures composed of a relatively small number of larger-sized building blocks, with little discussion of critical process parameters. It is anticipated that OPAL will enable the assembly, augmentation, and repair of microstructures composed of specialty micro/nanomaterial building blocks to be used in new photonic, microfluidic, and biomedical devices.

Material structure of two-/three-dimensional Si–C layers fabricated by hot-C+-ion implantation into Si-on-insulator substrate

2017 ◽  
Vol 56 (4S) ◽  
pp. 04CB03 ◽  
Author(s):  
Tomohisa Mizuno ◽  
Yuhsuke Omata ◽  
Yoshiki Nagamine ◽  
Takashi Aoki ◽  
Toshiyuki Sameshima
Keyword(s):  
Ion Implantation ◽  
Three Dimensional ◽  
Material Structure ◽  
Insulator Substrate

An algorithm for smoothing three-dimensional Monte Carlo ion implantation simulation results

2004 ◽  
Vol 66 (2-3) ◽  
pp. 219-230 ◽  
Author(s):  
Clemens Heitzinger ◽  
Andreas Hössinger ◽  
Siegfried Selberherr
Keyword(s):  
Monte Carlo ◽  
Ion Implantation ◽  
Three Dimensional ◽  
Simulation Results

Numerical study of silicon vacancy color centers in silicon carbide by helium ion implantation and subsequent annealing

2021 ◽  
Author(s):  
Yexin Fan ◽  
ying song ◽  
zongwei xu ◽  
jintong wu ◽  
rui zhu ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ion Implantation ◽  
Color Center ◽  
Md Simulation ◽  
Subsequent Annealing ◽  
Atomic Scale ◽  
New Method ◽  
Color Centers ◽  
Silicon Vacancy ◽  
Helium Ion

Abstract Molecular dynamics (MD) simulation is adopted to discover the underlying mechanism of silicon vacancy color center and damage evolution during helium ions implanted four-hexagonal silicon carbide (4H-SiC) and subsequent annealing. The atomic-scale mechanism of silicon vacancy color centers in the process of He ion implantation into 4H-SiC can be described more accurately by incorporating electron stopping power for He ion implantation. We present a new method for calculating the silicon vacancy color center numerically, which considers the structure around the color center and makes the statistical results more accurate than the Wigner-Seitz defect analysis method. At the same time, photoluminescence (PL) spectroscopy of silicon vacancy color center under different helium ion doses is also characterized for validating the numerical analysis. The MD simulation of the optimal annealing temperature of silicon vacancy color center is predicted by the proposed new method.

Microstructure of electrodeposited tungsten coatings after 30 keV helium ion implantation

2019 ◽  
Vol 144 ◽  
pp. 164-171
Author(s):  
Ningbo Sun ◽  
Shaoting Lang ◽  
Yingchun Zhang
Keyword(s):  
Ion Implantation ◽  
Helium Ion

Irradiation hardening of pure vanadium and vanadium alloys due to helium ion implantation and displacement damage

2020 ◽  
Vol 540 ◽  
pp. 152381
Author(s):  
Yitao Yang ◽  
Tingxing Yan ◽  
Chonghong Zhang ◽  
Xin Fu ◽  
Tongda Ma ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Displacement Damage ◽  
Vanadium Alloys ◽  
Irradiation Hardening ◽  
Helium Ion
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