High-speed and low-driving-Voltage thin-sheet X-cut LiNbO/sub 3/ Modulator with laminated low-dielectric-constant adhesive

2005 ◽  
Vol 17 (10) ◽  
pp. 2077-2079 ◽  
Author(s):  
Jungo Kondo ◽  
K. Aoki ◽  
A. Kondo ◽  
T. Ejiri ◽  
Y. Iwata ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
High Speed ◽  
Thin Sheet ◽  
Low Dielectric Constant ◽  
Driving Voltage ◽  
Low Dielectric

Low Dielectric Constant, High Temperature Stable Copolymer Thin Films by Room Temperature Chemical Vapor Deposition

1994 ◽  
Vol 343 ◽  
Author(s):  
Justin F. Gaynor ◽  
Seshu B. Desu
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Speed ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Conformal Coatings

ABSTRACTPolyxylylene thin films grown by the chemical vapor deposition (CVD) process have long been utilized to achieve uniform, pinhole-free conformal coatings. They have recently been cited as possible low dielectric constant films for intermetal layers in high-speed ICs. Homopolymer films are highly crystalline and have a glass transition temperature around room temperature. We have demonstrated that room temperature copolymerization with previously untested comonomers can be achieved during the CVD process. Copolymerizing chloro-p-xylylene with perfluorooctyl methacrylate results in the dielectric constant at optical frequencies being lowered from 2.68 to 2.19. Copolymerizing p-xylylene with vinylbiphenyl resulted in films which increase the temperature at which oxidative scission occurs from 320 to 450C. Copolymerizing p-xylylene with 9-vinylanthracene resulted in a brittle, yellow film.

Porous low dielectric constant materials for microelectronics

2005 ◽  
Vol 364 (1838) ◽  
pp. 201-215 ◽  
Author(s):  
Mikhail R Baklanov ◽  
Karen Maex
Keyword(s):  
Dielectric Constant ◽  
High Speed ◽  
Large Scale ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Large Scale Integration ◽  
The Subject ◽  
On Chip ◽  
Scale Integration ◽  
Selection Of

Materials with a low dielectric constant are required as interlayer dielectrics for the on-chip interconnection of ultra-large-scale integration devices to provide high speed, low dynamic power dissipation and low cross-talk noise. The selection of chemical compounds with low polarizability and the introduction of porosity result in a reduced dielectric constant. Integration of such materials into microelectronic circuits, however, poses a number of challenges, as the materials must meet strict requirements in terms of properties and reliability. These issues are the subject of the present paper.

On Advanced Interconnect Using Low Dielectric Constant Materials as Inter-Level Dielectrics

1996 ◽  
Vol 427 ◽  
Author(s):  
Bin Zhao ◽  
Shi-Qing Wang ◽  
Steven Anderson ◽  
Robbie Lam ◽  
Marcy Fiebig ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
High Speed ◽  
Organic Materials ◽  
Chemical Vapor ◽  
Evaluation Methodology ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Integration Architecture ◽  
Low Dielectric Constant Materials ◽  
On Chip

AbstractIn high performance integrated circuits, low dielectric constant (low-ε) materials are required as inter-level dielectric (ILD) for on-chip interconnect to provide advantages in high speed, low dynamic power dissipation and low cross-talk noise. A variety of low dielectric constant materials, which include fluorinated silicon-oxide, porous silica and porous organic materials, chemical vapor deposited and spin-on deposited (SOD) organic materials, have been developed or are under development to fulfill this need. In this paper, we first review the need and integration architecture of low-ε materials for on-chip interconnect. Then, we discuss the consequence of using low-ε materials as ILD in advanced interconnect with emphasis on the ILD electrical characteristics and the interconnect reliability. Although the focus is on several new promising SOD low-ε materials, the developed evaluation methodology is applicable to other type low-ε materials as well.

Introducing DuPont™ GreenTape™ 9K5 Low Dielectric Constant, Low Temperature Co-Fired Ceramic (LTCC) Tape System

2011 ◽  
Vol 2011 (1) ◽  
pp. 000544-000552
Author(s):  
Deepukumar M. Nair ◽  
James Parisi ◽  
K.M. Nair ◽  
Mark McCombs ◽  
Michael Smith ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Low Temperature ◽  
Millimeter Wave ◽  
High Speed ◽  
High Reliability ◽  
Signal Propagation ◽  
Dielectric Constants ◽  
Low Dielectric Constant ◽  
Material System ◽  
Low Dielectric

Low Temperature Co-fired Ceramic (LTCC) material systems have been successfully used in microwave and millimeter wave systems for several years. LTCC has very low dielectric loss, high reliability due to inherent hermeticity; high interconnect density, multilayer processing capability leading to true 3D packaging, and better cost-performance balance. While the medium range dielectric constants (7.00 – 8.00) offered by current tape systems have advantages, it is generally difficult to realize high speed systems and efficient antennas on LTCC, especially at millimeter wave frequencies. The difficulty arises from the reduced signal propagation velocity in high-speed applications, and lower radiation efficiency for antennas, both due to higher dielectric constant. To enable and extend applications of LTCC technology to these subsystems, DuPont has developed a new low dielectric constant LTCC system – DuPont™ GreenTape™ 9K5 - which has a dielectric constant of 5.80 (at 10 GHz) that is compatible with the commercial DuPont™ GreenTape™ 9K7 LTCC System. This is achieved without compromising excellent microwave loss properties of the 9KX GreenTape™ platform. These materials systems enable high-speed, high reliability applications while also realizing efficient antennas on LTCC. This paper presents initial characterization of the new DuPont™ GreenTape™ 9K5 LTCC system consisting of low K dielectric tape, gold and silver conductors to evaluate the effects of chemistry, processing conditions, processing latitude, microstructure, and microwave performance. Test coupons with various transmission and resonating structures are designed, fabricated, and tested for the evaluation of transmission losses and dielectric properties. Stability of the material system over multiple re-fire steps is also examined

Review of Low Dielectric Constant Thick Film Electronic Ceramics Using Hollow Microspheres

1994 ◽  
Vol 372 ◽  
Author(s):  
David W. Kellerman
Keyword(s):  
Dielectric Constant ◽  
Thick Film ◽  
Integrated Circuit ◽  
High Speed ◽  
Semiconductor Devices ◽  
Dielectric Constants ◽  
Hollow Microspheres ◽  
Low Dielectric Constant ◽  
Film Material ◽  
Low Dielectric

AbstractHigh speed interconnects for semiconductor devices require low dielectric constant materials to minimize propagation delays and capacitive line loading. Ceramics and thick film materials have been utilized to package these semiconductor devices, however their dielectric constants are prohibitively high. Hollow microspheres have been added to thick film glass and ceramic composite materials to lower the dielectric constant of those materials. This paper will review papers presented on the work done at Digital Equipment Corporation and EMCA-Remex to develop high speed integrated circuit packages with low dielectric constants.Presented will be the development and characterization of the low dielectric constant thick film material, processes used to fabricate devices with the low dielectric constant material, and development of the application of the material to an advanced ceramic integrated circuit package.

scholarly journals Low dielectric constant polymers for high speed communication network

2020 ◽  
Vol 3 (4) ◽  
pp. 138-148
Author(s):  
Lingling Wang ◽  
Chenchen Liu ◽  
Shizhao Shen ◽  
Mingzhen Xu ◽  
Xiaobo Liu
Keyword(s):  
Communication Network ◽  
Dielectric Constant ◽  
High Speed ◽  
Low Dielectric Constant ◽  
Low Dielectric
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