Band Structure of the Effective-Mass Superlattice

2006 ◽  
Author(s):  
M.V. Klymenko ◽  
I.M. Safonov ◽  
O.V. Shulika ◽  
I.A. Sukhoivanov
Keyword(s):  
Band Structure ◽  
Effective Mass

Longitudinal effective mass and band structure of quasiperiodic Fibonacci superlattices

1999 ◽  
Vol 59 (3) ◽  
pp. 2057-2062 ◽  
Author(s):  
A. Bruno-Alfonso ◽  
F. J. Ribeiro ◽  
A. Latgé ◽  
L. E. Oliveira
Keyword(s):  
Band Structure ◽  
Effective Mass

Band Structure, Spin Splitting, and Spin-Wave Effective Mass in Nickel

1970 ◽  
Vol 1 (1) ◽  
pp. 305-314 ◽  
Author(s):  
Joseph Callaway ◽  
H. M. Zhang
Keyword(s):  
Band Structure ◽  
Effective Mass ◽  
Spin Wave ◽  
Spin Splitting

Lattice-Mismatch Strain and Confinement in Nanoscale Si/SiO2 Structures Fabricated Using Thermal Oxidation

MRS Advances ◽  
2019 ◽  
Vol 4 (5-6) ◽  
pp. 351-357 ◽  
Author(s):  
Erin I. Vaughan ◽  
Clay S. Mayberry ◽  
Danhong Huang ◽  
Ashwani K. Sharma
Keyword(s):  
Band Structure ◽  
Effective Mass ◽  
Thermal Oxidation ◽  
Lattice Mismatch ◽  
Hole Transport ◽  
Bandgap Energy ◽  
Transient Time ◽  
Mismatch Strain ◽  
Carrier Effective Mass ◽  
Order Of Magnitude

ABSTRACTThe behavior of electron and hole transport in semiconductor materials is influenced by lattice-mismatch at the interface. It is well known that carrier scattering in a confined region is dramatically reduced. In this work, we studied the effects of coupling both the strain and confinement simultaneously. We report on the fabrication and characterization of nanoscale planar, wall-like, and wire-like Si/SiO2 structures. As the Si nanostructure dimensions were scaled down to the quantum regime by thermal oxidation of the Si, changes to the band structure and carrier effective mass were observed by both optical and electrical techniques. Transient-time response measurements were performed to examine the carrier generation and recombination behavior as a function of scaling. Signal rise times decreased for both carrier types by an order of magnitude as Si dimensions were reduced from 200 to 10 nm, meaning that the carrier velocity is increasing with smaller scale structures. This result is indicative of decreased Si bandgap energy and carrier effective mass. Photoluminescence measurements taken at 50K showed changes in the PL response peak energies, which illustrates changes in the band structure, as the Si/SiO2 dimensions are scaled.

scholarly journals Modeling Energy Bands in Type II Superlattices

Crystals ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 629
Author(s):  
Zoubir Becer ◽  
Abdeldjalil Bennecer ◽  
Noureddine Sengouga
Keyword(s):  
Band Structure ◽  
Effective Mass ◽  
Accurate Determination ◽  
Semiconductor Nanostructures ◽  
Band Structure Calculation ◽  
High Symmetry ◽  
Type Ii ◽  
Parabolic Model ◽  
Electronic Band ◽  
Energy Dependent

We present a rigorous model for the overall band structure calculation using the perturbative k · p approach for arbitrary layered cubic zincblende semiconductor nanostructures. This approach, first pioneered by Kohn and Luttinger, is faster than atomistic ab initio approaches and provides sufficiently accurate information for optoelectronic processes near high symmetry points in semiconductor crystals. k · p Hamiltonians are discretized and diagonalized using a finite element method (FEM) with smoothed mesh near interface edges and different high order Lagrange/Hermite basis functions, hence enabling accurate determination of bound states and related quantities with a small number of elements. Such properties make the model more efficient than other numerical models that are usually used. Moreover, an energy-dependent effective mass non-parabolic model suitable for large gap materials is also included, which offers fast and reasonably accurate results without the need to solve the full multi-band Hamiltonian. Finally, the tools are validated on three semiconductor nanostructures: (1) the bound energies of a finite quantum well using the energy-dependent effective mass non-parabolic model; (2) the InAs bulk band structure; and (3) the electronic band structure for the absorber region of photodetectors based on a type-II InAs/GaSb superlattice at room temperature. The tools are shown to work on simple and sophisticated designs and the results show very good agreement with recently published experimental works.

MAGNETOPHONON RESONANCE IN MnxCdyHg1-x-yTe

2007 ◽  
Vol 21 (08n09) ◽  
pp. 1615-1620
Author(s):  
D. PLOCH ◽  
J. CEBULSKI ◽  
E. M. SHEREGII
Keyword(s):  
Magnetic Fields ◽  
Band Structure ◽  
Effective Mass ◽  
Structure Parameters ◽  
Pulsed Magnetic Fields ◽  
Kane Model ◽  
Two Samples ◽  
Different Temperatures ◽  
Magnetophonon Resonance ◽  
Resonance Curves

The aim of this work is to analyze the band-structure parameters of Mn x Cd y Hg 1- x - y Te (MMCT) alloys by means of Magnetophonon Resonance (MPR) and to compare that obtained for Zn x Cd y Hg 1- x - y Te (ZMCT). MPR was observed for two samples of Mn x Cd y Hg 1- x - y Te (MMCT) (I- x =0.095 and y =0.09, II-0.04 and y =0.19). The measurements of MPR were performed in pulsed magnetic fields at different temperatures ranging from 77 K to 200 K. The several wide maxima are clearly visible on the experimental curves corresponding to four series of peaks. These series are related to three kinds of phonons analogous to ZMCT. The system of MPR peaks in MMCT is shifted significantly to the higher magnetic fields in comparison with the ZMCT resonance curves of approximately the same content of Zn . The value of effective mass obtained by MPR experiment is of 66% greater than those calculated in the framework of three-band Kane model, in which the value of Eg, was extracted from the photoconductivity data.

scholarly journals Band structure, effective mass, and carrier mobility of few-layer h-AlN under layer and strain engineering

APL Materials ◽  
2020 ◽  
Vol 8 (2) ◽  
pp. 021107 ◽  
Author(s):  
Yao Cai ◽  
Yan Liu ◽  
Ying Xie ◽  
Yang Zou ◽  
Chao Gao ◽  
...  
Keyword(s):  
Band Structure ◽  
Effective Mass ◽  
Carrier Mobility ◽  
Strain Engineering
Sign in / Sign up

Export Citation Format

Share Document