Band Structure of HgSe: Band Parameter Determinations from Effective-Mass Data, and Concentration Dependence and Anisotropy of Beating Effects in the Shubnikov-de Haas Oscillations

1971 ◽  
Vol 3 (12) ◽  
pp. 4274-4285 ◽  
Author(s):  
D. G. Seiler ◽  
R. R. Galazka ◽  
W. M. Becker
Keyword(s):  
Band Structure ◽  
Effective Mass ◽  
Concentration Dependence ◽  
Mass Data ◽  
Band Parameter ◽  
Shubnikov De Haas Oscillations

Longitudinal effective mass and band structure of quasiperiodic Fibonacci superlattices

1999 ◽  
Vol 59 (3) ◽  
pp. 2057-2062 ◽  
Author(s):  
A. Bruno-Alfonso ◽  
F. J. Ribeiro ◽  
A. Latgé ◽  
L. E. Oliveira
Keyword(s):  
Band Structure ◽  
Effective Mass

Band Structure, Spin Splitting, and Spin-Wave Effective Mass in Nickel

1970 ◽  
Vol 1 (1) ◽  
pp. 305-314 ◽  
Author(s):  
Joseph Callaway ◽  
H. M. Zhang
Keyword(s):  
Band Structure ◽  
Effective Mass ◽  
Spin Wave ◽  
Spin Splitting

Lattice-Mismatch Strain and Confinement in Nanoscale Si/SiO2 Structures Fabricated Using Thermal Oxidation

MRS Advances ◽  
2019 ◽  
Vol 4 (5-6) ◽  
pp. 351-357 ◽  
Author(s):  
Erin I. Vaughan ◽  
Clay S. Mayberry ◽  
Danhong Huang ◽  
Ashwani K. Sharma
Keyword(s):  
Band Structure ◽  
Effective Mass ◽  
Thermal Oxidation ◽  
Lattice Mismatch ◽  
Hole Transport ◽  
Bandgap Energy ◽  
Transient Time ◽  
Mismatch Strain ◽  
Carrier Effective Mass ◽  
Order Of Magnitude

ABSTRACTThe behavior of electron and hole transport in semiconductor materials is influenced by lattice-mismatch at the interface. It is well known that carrier scattering in a confined region is dramatically reduced. In this work, we studied the effects of coupling both the strain and confinement simultaneously. We report on the fabrication and characterization of nanoscale planar, wall-like, and wire-like Si/SiO2 structures. As the Si nanostructure dimensions were scaled down to the quantum regime by thermal oxidation of the Si, changes to the band structure and carrier effective mass were observed by both optical and electrical techniques. Transient-time response measurements were performed to examine the carrier generation and recombination behavior as a function of scaling. Signal rise times decreased for both carrier types by an order of magnitude as Si dimensions were reduced from 200 to 10 nm, meaning that the carrier velocity is increasing with smaller scale structures. This result is indicative of decreased Si bandgap energy and carrier effective mass. Photoluminescence measurements taken at 50K showed changes in the PL response peak energies, which illustrates changes in the band structure, as the Si/SiO2 dimensions are scaled.

scholarly journals Modeling Energy Bands in Type II Superlattices

Crystals ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 629
Author(s):  
Zoubir Becer ◽  
Abdeldjalil Bennecer ◽  
Noureddine Sengouga
Keyword(s):  
Band Structure ◽  
Effective Mass ◽  
Accurate Determination ◽  
Semiconductor Nanostructures ◽  
Band Structure Calculation ◽  
High Symmetry ◽  
Type Ii ◽  
Parabolic Model ◽  
Electronic Band ◽  
Energy Dependent

We present a rigorous model for the overall band structure calculation using the perturbative k · p approach for arbitrary layered cubic zincblende semiconductor nanostructures. This approach, first pioneered by Kohn and Luttinger, is faster than atomistic ab initio approaches and provides sufficiently accurate information for optoelectronic processes near high symmetry points in semiconductor crystals. k · p Hamiltonians are discretized and diagonalized using a finite element method (FEM) with smoothed mesh near interface edges and different high order Lagrange/Hermite basis functions, hence enabling accurate determination of bound states and related quantities with a small number of elements. Such properties make the model more efficient than other numerical models that are usually used. Moreover, an energy-dependent effective mass non-parabolic model suitable for large gap materials is also included, which offers fast and reasonably accurate results without the need to solve the full multi-band Hamiltonian. Finally, the tools are validated on three semiconductor nanostructures: (1) the bound energies of a finite quantum well using the energy-dependent effective mass non-parabolic model; (2) the InAs bulk band structure; and (3) the electronic band structure for the absorber region of photodetectors based on a type-II InAs/GaSb superlattice at room temperature. The tools are shown to work on simple and sophisticated designs and the results show very good agreement with recently published experimental works.

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