Lattice-Mismatch Strain and Confinement in Nanoscale Si/SiO2 Structures Fabricated Using Thermal Oxidation

MRS Advances ◽  
2019 ◽  
Vol 4 (5-6) ◽  
pp. 351-357 ◽  
Author(s):  
Erin I. Vaughan ◽  
Clay S. Mayberry ◽  
Danhong Huang ◽  
Ashwani K. Sharma
Keyword(s):  
Band Structure ◽  
Effective Mass ◽  
Thermal Oxidation ◽  
Lattice Mismatch ◽  
Hole Transport ◽  
Bandgap Energy ◽  
Transient Time ◽  
Mismatch Strain ◽  
Carrier Effective Mass ◽  
Order Of Magnitude

ABSTRACTThe behavior of electron and hole transport in semiconductor materials is influenced by lattice-mismatch at the interface. It is well known that carrier scattering in a confined region is dramatically reduced. In this work, we studied the effects of coupling both the strain and confinement simultaneously. We report on the fabrication and characterization of nanoscale planar, wall-like, and wire-like Si/SiO2 structures. As the Si nanostructure dimensions were scaled down to the quantum regime by thermal oxidation of the Si, changes to the band structure and carrier effective mass were observed by both optical and electrical techniques. Transient-time response measurements were performed to examine the carrier generation and recombination behavior as a function of scaling. Signal rise times decreased for both carrier types by an order of magnitude as Si dimensions were reduced from 200 to 10 nm, meaning that the carrier velocity is increasing with smaller scale structures. This result is indicative of decreased Si bandgap energy and carrier effective mass. Photoluminescence measurements taken at 50K showed changes in the PL response peak energies, which illustrates changes in the band structure, as the Si/SiO2 dimensions are scaled.

Longitudinal effective mass and band structure of quasiperiodic Fibonacci superlattices

1999 ◽  
Vol 59 (3) ◽  
pp. 2057-2062 ◽  
Author(s):  
A. Bruno-Alfonso ◽  
F. J. Ribeiro ◽  
A. Latgé ◽  
L. E. Oliveira
Keyword(s):  
Band Structure ◽  
Effective Mass

scholarly journals Highly efficient self-powered perovskite photodiode with an electron-blocking hole-transport NiOx layer

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Amir Muhammad Afzal ◽  
In-Gon Bae ◽  
Yushika Aggarwal ◽  
Jaewoo Park ◽  
Hye-Ryeon Jeong ◽  
...  
Keyword(s):  
Energy Harvesting ◽  
Bias Voltage ◽  
High Performance ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Zero Bias ◽  
Decay Times ◽  
Order Of Magnitude ◽  
Self Powered

AbstractHybrid organic–inorganic perovskite materials provide noteworthy compact systems that could offer ground-breaking architectures for dynamic operations and advanced engineering in high-performance energy-harvesting optoelectronic devices. Here, we demonstrate a highly effective self-powered perovskite-based photodiode with an electron-blocking hole-transport layer (NiOx). A high value of responsivity (R = 360 mA W−1) with good detectivity (D = 2.1 × 1011 Jones) and external quantum efficiency (EQE = 76.5%) is achieved due to the excellent interface quality and suppression of the dark current at zero bias voltage owing to the NiOx layer, providing outcomes one order of magnitude higher than values currently in the literature. Meanwhile, the value of R is progressively increased to 428 mA W−1 with D = 3.6 × 1011 Jones and EQE = 77% at a bias voltage of − 1.0 V. With a diode model, we also attained a high value of the built-in potential with the NiOx layer, which is a direct signature of the improvement of the charge-selecting characteristics of the NiOx layer. We also observed fast rise and decay times of approximately 0.9 and 1.8 ms, respectively, at zero bias voltage. Hence, these astonishing results based on the perovskite active layer together with the charge-selective NiOx layer provide a platform on which to realise high-performance self-powered photodiode as well as energy-harvesting devices in the field of optoelectronics.

A formalism for the indirect Auger effect. II

1976 ◽  
Vol 347 (1651) ◽  
pp. 565-573 ◽  
Keyword(s):  
Band Structure ◽  
Auger Recombination ◽  
Preceding Paper ◽  
Recombination Coefficient ◽  
Overlap Integrals ◽  
Estimated Parameters ◽  
Order Of Magnitude ◽  
Auger Effect ◽  
First Time ◽  
Auger Recombination Rate

The Auger recombination rate in indirect semiconductors with zincblende and diamond lattices is investigated, account being taken, for the first time, the properties of overlap integrals near symmetry points and axes. The effect of using theoretically estimated parameters is a reduction of the recombination coefficient by a factor 10. It is explained that the results, and those of the preceding paper, are still subject to uncertainties arising from the band structure so that only the order of magnitude of these coefficients can so far be regarded as known theoretically.

Group III-Sb Metamorphic Buffer on Si for p-Channel all-III-V CMOS: Electrical Properties, Growth and Surface Defects

2015 ◽  
Vol 1790 ◽  
pp. 13-18
Author(s):  
Shun Sasaki ◽  
Shailesh Madisetti ◽  
Vadim Tokranov ◽  
Michael Yakimov ◽  
Makoto Hirayama ◽  
...  
Keyword(s):  
Surface Defects ◽  
Lattice Mismatch ◽  
Chemical Properties ◽  
Antiphase Domain ◽  
Hole Transport ◽  
Heteroepitaxial Growth ◽  
Group Iii ◽  
Similar Chemical ◽  
Unintentional Doping ◽  
P Type

ABSTRACTGroup III-Sb compound semiconductors are promising materials for future CMOS circuits. Especially, In1-xGaxSb is considered as a complimentary p-type channel material to n-type In1-xGaxAs MOSFET due to the superior hole transport properties and similar chemical properties in III-Sb’s to those of InGaAs. The heteroepitaxial growth of In1-xGaxSb on Si substrate has significant advantage for volume fabrication of III-V ICs. However large lattice mismatch between InGaSb and Si results in many growth-related defects (micro twins, threading dislocations and antiphase domain boundaries); these defects also act as deep acceptor levels. Accordingly, unintentional doping in InGaSb films causes additional scattering, increase junction leakages and affects the interface properties. In this paper, we studied the correlations between of defects and hole carrier densities in GaSb and strained In1-xGaxSb quantum well layers by using various designs of metamorphic superlattice buffers.

scholarly journals Size Distribution, Mechanical and Electrical Properties of CuO Nanowires Grown by Modified Thermal Oxidation Methods

Nanomaterials ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 1051 ◽  
Author(s):  
Raitis Sondors ◽  
Jelena Kosmaca ◽  
Gunta Kunakova ◽  
Liga Jasulaneca ◽  
Matiss Martins Ramma ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Aspect Ratio ◽  
Electric Field ◽  
Thermal Oxidation ◽  
Size Distribution ◽  
High Aspect Ratio ◽  
Growth Conditions ◽  
Cuo Nanowires ◽  
Young’S Moduli ◽  
Order Of Magnitude

Size distribution, Young’s moduli and electrical resistivity are investigated for CuO nanowires synthesized by different thermal oxidation methods. Oxidation in dry and wet air were applied for synthesis both with and without an external electrical field. An increased yield of high aspect ratio nanowires with diameters below 100 nm is achieved by combining applied electric field and growth conditions with additional water vapour at the first stage of synthesis. Young’s moduli determined from resonance and bending experiments show similar diameter dependencies and increase above 200 GPa for nanowires with diameters narrower than 50 nm. The nanowires synthesized by simple thermal oxidation possess electrical resistivities about one order of magnitude lower than the nanowires synthesized by electric field assisted approach in wet air. The high aspect ratio, mechanical strength and robust electrical properties suggest CuO nanowires as promising candidates for NEMS actuators.

scholarly journals Laser energy tuning of carrier effective mass and thermopower in epitaxial oxide thin films

2012 ◽  
Vol 100 (16) ◽  
pp. 162106 ◽  
Author(s):  
A. I. Abutaha ◽  
S. R. Sarath Kumar ◽  
H. N. Alshareef
Keyword(s):  
Thin Films ◽  
Effective Mass ◽  
Laser Energy ◽  
Oxide Thin Films ◽  
Carrier Effective Mass ◽  
Epitaxial Oxide ◽  
Energy Tuning
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