scholarly journals Band structure, effective mass, and carrier mobility of few-layer h-AlN under layer and strain engineering

APL Materials ◽  
2020 ◽  
Vol 8 (2) ◽  
pp. 021107 ◽  
Author(s):  
Yao Cai ◽  
Yan Liu ◽  
Ying Xie ◽  
Yang Zou ◽  
Chao Gao ◽  
...  
Keyword(s):  
Band Structure ◽  
Effective Mass ◽  
Carrier Mobility ◽  
Strain Engineering

Realizing high performance n-type PbTe by synergistically optimizing effective mass and carrier mobility and suppressing bipolar thermal conductivity

2018 ◽  
Vol 11 (9) ◽  
pp. 2486-2495 ◽  
Author(s):  
Yu Xiao ◽  
Haijun Wu ◽  
Juan Cui ◽  
Dongyang Wang ◽  
Liangwei Fu ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Band Structure ◽  
Effective Mass ◽  
Point Defects ◽  
High Performance ◽  
Carrier Mobility

Synergistically optimizing the band structure and introducing point defects lead to remarkably high ZT in n-type PbTe–MnTe.

Longitudinal effective mass and band structure of quasiperiodic Fibonacci superlattices

1999 ◽  
Vol 59 (3) ◽  
pp. 2057-2062 ◽  
Author(s):  
A. Bruno-Alfonso ◽  
F. J. Ribeiro ◽  
A. Latgé ◽  
L. E. Oliveira
Keyword(s):  
Band Structure ◽  
Effective Mass

Structural design principles for low hole effective mass s-orbital-based p-type oxides

2017 ◽  
Vol 5 (23) ◽  
pp. 5772-5779 ◽  
Author(s):  
Viet-Anh Ha ◽  
Francesco Ricci ◽  
Gian-Marco Rignanese ◽  
Geoffroy Hautier
Keyword(s):  
Effective Mass ◽  
First Principles ◽  
Structural Design ◽  
Carrier Mobility ◽  
Design Principles ◽  
Hole Effective Mass ◽  
P Type

We demonstrate through first principles computations how the metal–oxygen–metal angle directly drives the hole effective mass (thus the carrier mobility) in p-type s-orbital-based oxides.

Strain-engineering the in-plane electrical anisotropy of GeSe monolayers

2020 ◽  
Vol 22 (2) ◽  
pp. 914-918 ◽  
Author(s):  
Zongbao Li ◽  
Xinsheng Liu ◽  
Xia Wang ◽  
Yusi Yang ◽  
Shun-Chang Liu ◽  
...  
Keyword(s):  
Effective Mass ◽  
Strain Engineering ◽  
Charge Carriers ◽  
Electrical Anisotropy ◽  
Mobility Of Charge Carriers

The anisotropic ratio of the effective mass and mobility of charge carriers of GeSe monolayer along two principle axes can be controlled by using simple strain conditions.

Band Structure, Spin Splitting, and Spin-Wave Effective Mass in Nickel

1970 ◽  
Vol 1 (1) ◽  
pp. 305-314 ◽  
Author(s):  
Joseph Callaway ◽  
H. M. Zhang
Keyword(s):  
Band Structure ◽  
Effective Mass ◽  
Spin Wave ◽  
Spin Splitting

Lattice-Mismatch Strain and Confinement in Nanoscale Si/SiO2 Structures Fabricated Using Thermal Oxidation

MRS Advances ◽  
2019 ◽  
Vol 4 (5-6) ◽  
pp. 351-357 ◽  
Author(s):  
Erin I. Vaughan ◽  
Clay S. Mayberry ◽  
Danhong Huang ◽  
Ashwani K. Sharma
Keyword(s):  
Band Structure ◽  
Effective Mass ◽  
Thermal Oxidation ◽  
Lattice Mismatch ◽  
Hole Transport ◽  
Bandgap Energy ◽  
Transient Time ◽  
Mismatch Strain ◽  
Carrier Effective Mass ◽  
Order Of Magnitude

ABSTRACTThe behavior of electron and hole transport in semiconductor materials is influenced by lattice-mismatch at the interface. It is well known that carrier scattering in a confined region is dramatically reduced. In this work, we studied the effects of coupling both the strain and confinement simultaneously. We report on the fabrication and characterization of nanoscale planar, wall-like, and wire-like Si/SiO2 structures. As the Si nanostructure dimensions were scaled down to the quantum regime by thermal oxidation of the Si, changes to the band structure and carrier effective mass were observed by both optical and electrical techniques. Transient-time response measurements were performed to examine the carrier generation and recombination behavior as a function of scaling. Signal rise times decreased for both carrier types by an order of magnitude as Si dimensions were reduced from 200 to 10 nm, meaning that the carrier velocity is increasing with smaller scale structures. This result is indicative of decreased Si bandgap energy and carrier effective mass. Photoluminescence measurements taken at 50K showed changes in the PL response peak energies, which illustrates changes in the band structure, as the Si/SiO2 dimensions are scaled.

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