SrSnO3 Field-Effect Transistors With Recessed Gate Electrodes

2020 ◽  
Vol 41 (9) ◽  
pp. 1428-1431 ◽  
Author(s):  
V. R. Saran Kumar Chaganti ◽  
Tristan K. Truttmann ◽  
Fengdeng Liu ◽  
Bharat Jalan ◽  
Steven J. Koester
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Gate Electrodes ◽  
Recessed Gate

High Performance Organic Field-Effect Transistors and Integrated Inverters

2001 ◽  
Vol 665 ◽  
Author(s):  
A. Ullmann ◽  
J. Ficker ◽  
W. Fix ◽  
H. Rost ◽  
W. Clemens ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Drain Current ◽  
Organic Field Effect Transistors ◽  
Metal Contacts ◽  
Gate Electrodes ◽  
Polymer Semiconductors ◽  
Set Up

ABSTRACTIntegrated plastic circuits (IPCs) will become an integral component of future low cost electronics. For low cost processes IPCs have to be made of all-polymer Transistors. We present our recent results on fabrication of Organic Field-Effect Transistors (OFETs) and integrated inverters. Top-gate transistors were fabricated using polymer semiconductors and insulators. The source-drain structures were defined by standard lithography of Au on a flexible plastic film, and on top of these electrodes, poly(3-alkylthiophene) (P3AT) as semiconductor, and poly(4-hydroxystyrene) (PHS) as insulator were homogeneously deposited by spin-coating. The gate electrodes consist of metal contacts. With this simple set-up, the transistors exhibit excellent electric performance with a high source-drain current at source - drain and gate voltages below 30V. The characteristics show very good saturation behaviour for low biases and are comparable to results published for precursor pentacene. With this setup we obtain a mobility of 0.2cm2/Vs for P3AT. Furthermore, we discuss organic integrated inverters exhibiting logic capability. All devices show shelf-lives of several months without encapsulation.

High-power AlGaN∕InGaN∕AlGaN∕GaN recessed gate heterostructure field-effect transistors

2005 ◽  
Vol 86 (14) ◽  
pp. 143512 ◽  
Author(s):  
R. S. Qhalid Fareed ◽  
X. Hu ◽  
A. Tarakji ◽  
J. Deng ◽  
R. Gaska ◽  
...  
Keyword(s):  
High Power ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Heterostructure Field Effect Transistors ◽  
Recessed Gate

Electrical and structural characterization of AlGaN/GaN field-effect transistors with recessed gate

Vacuum ◽  
2012 ◽  
Vol 86 (6) ◽  
pp. 754-756 ◽  
Author(s):  
M. Mikulics ◽  
A. Fox ◽  
M. Marso ◽  
D. Grützmacher ◽  
D. Donoval ◽  
...  
Keyword(s):  
Structural Characterization ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Recessed Gate

Erratum: “Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes” [Appl. Phys. Lett. 80, 3817 (2002)]

2002 ◽  
Vol 81 (7) ◽  
pp. 1359-1359 ◽  
Author(s):  
S. J. Wind ◽  
J. Appenzeller ◽  
R. Martel ◽  
V. Derycke ◽  
Ph. Avouris
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Vertical Scaling ◽  
Gate Electrodes

Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes

2002 ◽  
Vol 80 (20) ◽  
pp. 3817-3819 ◽  
Author(s):  
S. J. Wind ◽  
J. Appenzeller ◽  
R. Martel ◽  
V. Derycke ◽  
Ph. Avouris
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Vertical Scaling ◽  
Gate Electrodes
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