Application of reactive-ion-beam etching to recessed-gate GaAs metal–semiconductor field-effect transistors

1987 ◽  
Vol 5 (4) ◽  
pp. 889 ◽  
Author(s):  
Yuhki Imai
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Ion Beam ◽  
Ion Beam Etching ◽  
Recessed Gate ◽  
Reactive Ion Beam Etching

Reactive Ion Beam Etching Using a Selective Gallium Doping Method

1989 ◽  
Vol 28 (Part 2, No. 9) ◽  
pp. L1671-L1672
Author(s):  
Kyusaku Nishioka ◽  
Hiroaki Morimoto ◽  
Yoji Mashiko ◽  
Tadao Kato
Keyword(s):  
Ion Beam ◽  
Ion Beam Etching ◽  
Gallium Doping ◽  
Reactive Ion Beam Etching

scholarly journals Three-Dimensional Nanoscale Mapping of State-of-the-Art Field-Effect Transistors (FinFETs)

2017 ◽  
Vol 23 (5) ◽  
pp. 916-925
Author(s):  
Pritesh Parikh ◽  
Corey Senowitz ◽  
Don Lyons ◽  
Isabelle Martin ◽  
Ty J. Prosa ◽  
...  
Keyword(s):  
Field Effect ◽  
Focused Ion Beam ◽  
Field Effect Transistors ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Three Dimensional ◽  
Atom Probe ◽  
Physical Structure ◽  
Oxide Semiconductor ◽  
Device Performance

AbstractThe semiconductor industry has seen tremendous progress over the last few decades with continuous reduction in transistor size to improve device performance. Miniaturization of devices has led to changes in the dopants and dielectric layers incorporated. As the gradual shift from two-dimensional metal-oxide semiconductor field-effect transistor to three-dimensional (3D) field-effect transistors (finFETs) occurred, it has become imperative to understand compositional variability with nanoscale spatial resolution. Compositional changes can affect device performance primarily through fluctuations in threshold voltage and channel current density. Traditional techniques such as scanning electron microscope and focused ion beam no longer provide the required resolution to probe the physical structure and chemical composition of individual fins. Hence advanced multimodal characterization approaches are required to better understand electronic devices. Herein, we report the study of 14 nm commercial finFETs using atom probe tomography (APT) and scanning transmission electron microscopy–energy-dispersive X-ray spectroscopy (STEM-EDS). Complimentary compositional maps were obtained using both techniques with analysis of the gate dielectrics and silicon fin. APT additionally provided 3D information and allowed analysis of the distribution of low atomic number dopant elements (e.g., boron), which are elusive when using STEM-EDS.

SrSnO3 Field-Effect Transistors With Recessed Gate Electrodes

2020 ◽  
Vol 41 (9) ◽  
pp. 1428-1431 ◽  
Author(s):  
V. R. Saran Kumar Chaganti ◽  
Tristan K. Truttmann ◽  
Fengdeng Liu ◽  
Bharat Jalan ◽  
Steven J. Koester
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Gate Electrodes ◽  
Recessed Gate

Vapor deposition polymerization and reactive ion beam etching of poly(p-xylylene) films for waveguide applications

1999 ◽  
Vol 12 (2-3) ◽  
pp. 229-233 ◽  
Author(s):  
Bernard Ratier ◽  
Yong Seok Jeong ◽  
André Moliton ◽  
Pierre Audebert
Keyword(s):  
Vapor Deposition ◽  
Ion Beam ◽  
Ion Beam Etching ◽  
Reactive Ion Beam Etching

A Blazed Si Grating for Soft X-Ray Fabricated by Two-Stage Reactive Ion-Beam Etching

1983 ◽  
Vol 22 (Part 2, No. 4) ◽  
pp. L219-L220 ◽  
Author(s):  
Hiroaki Aritome ◽  
Toshiya Yamato ◽  
Shinji Matsui ◽  
Susumu Namba
Keyword(s):  
Ion Beam ◽  
Two Stage ◽  
Ion Beam Etching ◽  
X Ray ◽  
Reactive Ion Beam Etching
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